NEC NNCD3.3B, NNCD4.7B, NNCD5.1B, NNCD7.5B, NNCD8.2B Datasheet
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DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3B to NNCD12B
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (500 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV.
Type NNCD2.0B to NNCD12B Series is into DO-35 Package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW.
FEATURES
•Based on the electrostatic discharge immunity test (IEC1000-4- 2), the product assures the minimum endurance of 30 kV.
•Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up).
•DHD (Double Heatsink Diode) construction.
APPLICATIONS
•Circuit E.S.D protection.
•Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation |
P |
500 mW |
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Surge Reverse Power |
PRSM |
100 |
W (tT = 10 μs 1 pulse) |
Junction Temperature |
Tj |
175 |
°C |
Storage Temperature |
Tstg |
–65 °C to +175 °C |
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PACKAGE DIMENSIONS
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(in millimeters) |
φ 0.5 |
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25 MIN. |
Cathode |
MAX. |
indication |
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φ 2.0 MAX. |
4.2 |
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25 MIN. |
Fig. 7
Document No. D11770EJ2V0DS00 (2nd edition) |
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Date Published December 1996 N |
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Printed in Japan |
© |
1996 |
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NNCD3.3B to NNCD12B
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
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Breakdown VoltageNote 1 |
Dynamic |
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Reverse Leakage |
Capacitance |
E.S.D Voltage |
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ImpedanceNote 2 |
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VBR (V) |
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IR (μA) |
Ct (pF) |
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(kV) |
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Type Number |
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Zz (Ω) |
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MIN. |
MAX. |
IT (mA) |
MAX. |
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IT (mA) |
MAX. |
VR (V) |
TYP. |
TEST |
MIN. |
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TEST |
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CONDITION |
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CONDITION |
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NNCD3.3B |
3.16 |
3.53 |
20 |
70 |
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20 |
20 |
1.0 |
240 |
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30 |
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NNCD3.6B |
3.47 |
3.83 |
20 |
60 |
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20 |
10 |
1.0 |
230 |
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30 |
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NNCD3.9B |
3.77 |
4.14 |
20 |
50 |
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20 |
5 |
1.0 |
220 |
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30 |
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NNCD4.3B |
4.05 |
4.53 |
20 |
40 |
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20 |
5 |
1.0 |
210 |
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30 |
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NNCD4.7B |
4.47 |
4.91 |
20 |
25 |
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20 |
5 |
1.0 |
190 |
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30 |
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NNCD5.1B |
4.85 |
5.35 |
20 |
20 |
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20 |
5 |
1.5 |
160 |
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30 |
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C = 150 pF |
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NNCD5.6B |
5.29 |
5.88 |
20 |
13 |
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20 |
5 |
2.5 |
140 |
VR = 0 V |
30 |
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R = 330 Ω |
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f = 1 MHz |
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(IEC1000 |
NNCD6.2B |
5.81 |
6.40 |
20 |
10 |
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20 |
5 |
3.0 |
120 |
30 |
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-4-2) |
NNCD6.8B |
6.32 |
6.97 |
20 |
8 |
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20 |
2 |
3.5 |
110 |
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30 |
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NNCD7.5B |
6.88 |
7.64 |
20 |
8 |
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20 |
0.5 |
4.0 |
90 |
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30 |
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NNCD8.2B |
7.56 |
8.41 |
20 |
8 |
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20 |
0.5 |
5.0 |
90 |
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30 |
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NNCD9.1B |
8.33 |
9.29 |
20 |
8 |
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20 |
0.5 |
6.0 |
90 |
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30 |
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NNCD10B |
9.19 |
10.3 |
20 |
8 |
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20 |
0.2 |
7.0 |
80 |
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30 |
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NNCD11B |
10.18 |
11.26 |
10 |
10 |
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10 |
0.2 |
8.0 |
70 |
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30 |
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NNCD12B |
11.13 |
12.30 |
10 |
10 |
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0.2 |
9.0 |
70 |
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30 |
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Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2
NNCD3.3B to NNCD12B
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. |
Fig. 2 THERMAL RESISTANCE vs. |
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AMBIENT TEMPERATURE |
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SIZE OF P.C BOARD |
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600 |
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600 |
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Junction to |
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- °C/W |
500 |
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anbient |
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mW |
500 |
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= 5 mm |
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= 10 mm |
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Thermal Resistance |
400 |
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- Power Dissipation |
400 |
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S |
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300 |
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10 mm |
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P.C Board |
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300 |
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= 10 mm |
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7 mm |
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200 |
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t = 0.035 mm |
200 |
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P.C Board φ 3 mm |
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= 5 mm |
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t = 0.035 mm |
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P |
100 |
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th - |
100 |
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R |
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0 |
20 |
40 |
60 |
80 |
100 120 140 160 180 200 |
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60 |
80 |
100 |
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TA - Ambient Temperature - °C |
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S - Size of P.C Board - mm2 |
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Fig. 3 |
IT - VBR |
CHARACTERISTICS |
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Fig. 4 |
IT - VBR CHARACTERISTICS |
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NNCD5.6B |
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TA = 25 °C NNCD6.8B |
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TA = 25 °C |
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NNCD5.1B |
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TYP. |
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NNCD6.2B |
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TYP. |
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100 m |
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NNCD7.5B |
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100 m |
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NNCD11B |
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NNCD8.2B |
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NNCD3.3B |
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NNCD10B |
NNCD12B |
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NNCD9.1B |
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NNCD3.6B |
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10 m |
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10 m NNCD3.9B |
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NNCD4.3B |
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NNCD4.7B |
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1 m |
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- A |
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1 m |
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- A |
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State Current |
100 μ |
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State Current |
100 μ |
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10 μ |
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10 μ |
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On |
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On |
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IT - |
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1 μ |
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IT - |
1 μ |
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100 n |
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100 n |
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10 n |
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10 n |
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1 n |
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1 n |
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0 |
1 |
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0 |
7 |
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14 |
15 |
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VBR - Breakdown Voltage - V |
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VBR - Breakdown Voltage - V |
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3 |
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