NEC Electronics Inc UPA834TF-T1, UPA834TF Datasheet

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PRELIMINARY DATA SHEET

Silicon Transistor

μPA834TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION

The μPA834TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

FEATURES

Low noise

Q1 : NF = 1.4 dB TYP., Q2 : NF = 1.2 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA

High gain

Q1 : |S21e|2 = 12.0 dB TYP. Q2 : |S21e|2 = 9.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA

6-pin thin-type small mini mold package

2 different transistors on-chip (2SC4227, 2SC4226)

ON-CHIP TRANSISTORS

 

Q1

Q2

 

 

 

3-pin small mini mold part No.

2SC4227

2SC4226

 

 

 

The μPA831TF features the Q1 and Q2 in inverted positions.

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

 

 

 

μPA834TF

Loose products

8-mm wide embossed tape.

 

(50 pcs)

Pin 6 (Q1 Base), pin 5 (Q2

 

 

Emitter), and pin 4 (Q2 Base)

μPA834TF-T1

Taping products

face perforated side of tape.

 

(3 kpcs/reel)

 

 

 

 

 

PACKAGE DRAWINGS (Unit:mm)

 

 

 

 

2.10±0.1

 

 

 

 

 

 

1.25±0.1

 

 

 

 

 

 

7 2 V

 

+0.1 0.05

2.00±0.2

1.30

0.65 0.65

2 1

5 6

0.22

 

 

 

3

 

4

 

0.60±0.1

0.45

0.1

0.13±0.05

 

 

0 to

 

PIN CONFIGURATION (Top View)

B1 E2 B2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6

 

 

5

 

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q1

 

 

 

 

Q2

 

 

 

1

 

 

2

 

 

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C1

E1

C2

PIN CONNECTIONS

 

 

 

 

1.

Collector (Q1)

 

 

 

4.

Base (Q2)

2.

Emitter (Q1)

 

 

 

5.

Emitter (Q2)

3.

Collector (Q2)

 

 

 

6.

Base (Q1)

Caution is required concerning excess input, such as from static electricity, because the high-frequency

process is used for this device.

The information in this document is subject to change without notice.

Document No. P12726EJ1V0DS00 (1st edition)

Date Published August 1997 N

 

 

Printed in Japan

©

1997

 

 

 

 

 

 

μPA834TF

 

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

 

RATING

 

UNIT

 

 

 

 

 

 

 

 

Q1

 

Q2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to base voltage

VCBO

20

 

20

 

V

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter voltage

VCEO

10

 

12

 

V

 

 

 

 

 

 

 

 

 

 

 

Emitter to base voltage

VEBO

1.5

 

3

 

V

 

 

 

 

 

 

 

 

 

 

 

Collector current

IC

65

 

100

 

mA

 

 

 

 

 

 

 

 

 

 

 

Total power dissipation

PT

150 in 1 element

 

150 in 1 element

 

mW

 

 

 

 

 

 

 

 

 

 

 

 

200 in 2 elementsNote

 

 

 

 

 

 

 

 

 

 

 

 

 

Junction temperature

Tj

150

 

150

 

°C

 

 

 

 

 

 

 

 

 

 

 

Storage temperature

Tstg

 

65 to +150

 

°C

 

 

 

 

 

 

 

 

 

 

Note 110 mW must not be exceeded for 1 element.

(1) Q1

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

 

CONDITION

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

Collector cutoff current

ICBO

VCB = 10 V, IE = 0

 

 

0.8

μA

 

 

 

 

 

 

 

Emitter cutoff current

IEBO

VEB = 1 V, IC = 0

 

 

0.8

μA

 

 

 

 

 

 

 

DC current gain

hFE

VCE = 3 V, IC = 7 mANote 1

70

 

150

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

VCE = 3

V, IC = 7 mA, f = 1 GHz

4.5

7.0

 

GHz

 

 

 

 

 

 

 

 

Feedback capacitance

Cre

VCB = 3

V, IE = 0, f = 1 MHzNote 2

 

0.45

0.9

pF

 

 

 

 

 

 

 

 

Insertion power gain

|S21e|2

VCE = 3

V, IC = 7 mA, f = 1 GHz

10

12

 

dB

 

 

 

 

 

 

 

 

Noise figure

NF

VCE = 3

V, IC = 7 mA, f = 1 GHz

 

1.4

2.7

dB

 

 

 

 

 

 

 

 

Notes 1. Pulse measurement: PW 350 μs, Duty cycle 2%

2.Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter.

2

μPA834TF

(2) Q2

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

 

CONDITION

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

Collector cutoff current

ICBO

VCB = 10 V, IE = 0

 

 

1

μA

 

 

 

 

 

 

 

Emitter cutoff current

IEBO

VEB = 1 V, IC = 0

 

 

1

μA

 

 

 

 

 

 

 

DC current gain

hFE

VCE = 3 V, IC = 7 mANote 1

100

 

145

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

VCE = 3

V, IC = 7 mA, f = 1 GHz

3.0

4.5

 

GHz

 

 

 

 

 

 

 

 

Feedback capacitance

Cre

VCB = 3

V, IE = 0, f = 1 MHzNote 2

 

0.7

1.5

pF

 

 

 

 

 

 

 

 

Insertion power gain

|S21e|2

VCE = 3

V, IC = 7 mA, f = 1 GHz

7

9

 

dB

 

 

 

 

 

 

 

 

Noise figure

NF

VCE = 3

V, IC = 7 mA, f = 1 GHz

 

1.2

2.5

dB

 

 

 

 

 

 

 

 

Notes 1. Pulse measurement: PW 350 μs, Duty cycle 2%

2.Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter.

hFE CLASSIFICATION

Rank

FB

 

 

Marking

V27

 

 

hFE value of Q1

70 to 150

 

 

hFE value of Q2

100 to 145

 

 

3

NEC Electronics Inc UPA834TF-T1, UPA834TF Datasheet

TYPICAL CHARACTERISTICS (TA = 25°C)

Q1

Total Power Dissipation vs. Ambient Temperature

(mW)

 

 

Free Air

 

200

 

Q1 + Q2 total

 

 

 

 

PT

 

 

Q1 when using

 

dissipation

 

 

 

 

 

1 element

 

 

 

Q1 when using

 

100

 

2 elements

 

 

 

 

Total power

 

 

 

 

 

 

 

 

0

50

100

150

 

 

Ambient temperature TA (°C)

 

Collector Current vs. Collector to Emitter Voltage

 

25

 

 

(mA)

20

160

μA

 

 

 

IC

 

μA

 

140

current

15

μA

120

 

 

 

 

 

μA

Collector

 

100

5

μA

40

 

10

80

μ

 

 

A

 

 

60

μA

 

 

IB = 20 μA

 

0

0.5

1.0

Collector to emitter voltage VCE (V)

Collector Current vs. DC Base Voltage

 

20

 

 

 

 

 

 

 

 

 

 

 

IC (mA)

VCE = 3 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

currentCollector

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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0.5

1.0

DC base voltage VBE (V)

μPA834TF

Q2

Total Power Dissipation vs. Ambient Temperature

(mW)

 

 

Free Air

 

200

 

Q1 + Q2 total

 

 

 

 

PT

 

 

 

 

 

Q2 when using

dissipation

 

 

 

 

1 element

 

 

 

Q2 when using

100

 

2 elements

 

 

 

 

Total power

 

 

 

 

 

 

 

 

0

50

100

150

 

 

Ambient temperature TA (°C)

 

Collector Current vs. Collector to Emitter Voltage

 

25

IB = 160 μA

 

 

 

 

(mA)IC

 

140 μA

20

120

μA

 

 

 

current

15

100

μA

 

 

 

80

μA

 

 

Collector

10

60

μA

5

40

μA

 

 

20

μ A

 

 

 

0

5

10

Collector to emitter voltage VCE (V)

Collector Current vs. DC Base Voltage

 

20

 

 

 

 

 

 

 

 

 

 

 

IC (mA)

VCE = 3 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

currentCollector

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0.5

1.0

DC base voltage VBE (V)

4

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