NEC Electronics Inc UPA826TF-T1, UPA826TF, UPA826TC Datasheet

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

μPA826TC

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 2 × 2SC5010)

FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD

FEATURES

•Low noise and high gain

•Operable at low voltage

•Small feedback capacitance: Cre = 0.4 pF TYP.

•Flat-lead 6-pin thin-type ultra super minimold package

•Built-in 2 transistors (2 × 2SC5010)

ORDERING INFORMATION

	Part Number	Package	Quantity	Supplying Form
	μPA826TC	Flat-lead 6-pin	Loose products	Embossed tape 8 mm wide.
		thin-type ultra	(50 pcs)	Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation
		super minimold		side of the tape.
	μPA826TC-T1		Taping products
			(3 kp/reel)

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

μPA826TC. Unit sample quantity is 50 pcs).

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter	Symbol	Ratings	Unit
Collector to Base Voltage	VCBO	9	V
Collector to Emitter Voltage	VCEO	6	V
Emitter to Base Voltage	VEBO	2	V
Collector Current	IC	30	mA
Total Power Dissipation	PTNote	180 in 1 element	mW
		230 in 2 elements
Junction Temperature	Tj	150	°C
Storage Temperature	Tstg	−65 to 150	°C

Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate.

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P14553EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)	©	1999
Printed in Japan

								μPA826TC
	ELECTRICAL CHARACTERISTICS (TA = +25 °C)
	Parameter	Symbol		Conditions	MIN.	TYP.	MAX.		Unit
	Collector Cutoff Current	ICBO	VCB = 10 V, IE = 0		−	−	0.1		μA
	Emitter Cutoff Current	IEBO	VEB = 1 V, IC = 0		−	−	0.1		μA
	DC Current Gain	hFE	VCE = 3 V, IC = 7 mANote 1		75	−	150
	Gain Bandwidth Product	fT	VCE = 3	V, IC = 7 mA, f = 1 GHz	10.0	12.0	−		GHz
	Feedback Capacitance	Cre	VCB = 3	V, IE = 0, f = 1 MHzNote 2	−	0.4	0.7		pF
	Insertion Power Gain	|S21e|2	VCE = 3	V, IC = 7 mA, f = 1 GHz	7.0	8.5	−		dB
	Noise Figure	NF	VCE = 3	V, IC = 7 mA, f = 1 GHz	−	1.5	2.5		dB

Notes 1. Pulse Measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2.Capacitance between collector and base measured with a capacitance meter (auto−balancing bridge method). Emitter should be connected to the guard pin of capacitance meter.

hFE CLASSIFICATION

Rank	KB
Marking	83
hFE Value	75 to 150

2	Data Sheet P14553EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25 °C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

(mW)	230	2 Elements in total	Free Air
	200
PT	180	Per
Dissipation
		Element
	100
Total Power
	0	50	100	150
	0
		Ambient Temperature TA (°C)

				COLLECTOR CURRENT vs.
				COLLECTOR TO EMITTER VOLTAGE
	20
(mA)	16																													IB = 160 μ A
																														IB = 140 μ A
IC
	12																													IB = 120 μ A
Current
																														IB = 100 μ A
	8
Collector																														IB = 80							μ		A
	4
																														IB = 40 μA
																														IB = 60						μA
																														IB = 20							μ		A
	0
			1									2									3				4				5							6
	0
					Collector to Emitter Voltage																								VCE (V)
						GAIN BANDWIDTH PRODUCT vs.
						COLLECTOR CURRENT
	18.00
(GHz)			VCE = 3 V
	16.00
			f = 2 GHz
fT
Product	14.00
Bandwidth	12.00
Gain	10.00
	8.00
																					10															100
	1
										Collector Current															IC (mA)

μPA826TC

COLLECTOR CURRENT vs.

DC BASE VOLTAGE

	50
		VCE = 3 V
IC (mA)	40
	30
Current
	20
Collector
	10
	0

	0		0.5																																		1.0
							DC Base Voltage VBE (V)
								DC CURRENT GAIN vs.
								COLLECTOR CURRENT
1 000
																											VCE = 3 V
hFE
Gain	100
DC Current
	10
			1																				10														100
	0.1
								Collector Current																IC (mA)
						INSERTION POWER GAIN vs.
						COLLECTOR CURRENT
	12.00
(dB)			VCE = 3 V
			f = 2 GHz
ï2	10.00
S21e
ï	8.00
Gain
Power	6.00
Insertion	4.00
	2.00
			10																																		100
	1
								Collector Current																IC (mA)

Data Sheet P14553EJ1V0DS00

3

NOISE FIGURE vs. COLLECTOR CURRENT

10.00
		VCE = 3 V
		f = 2 GHz
NF (dB)	8.00
	6.00
Figure	4.00
Noise
	2.00
	0.00

	1		10										100
				Collector Current									IC (mA)
		INSERTION POWER GAIN vs. FREQUENCY
	30.0
(dB)			VCE = 3 V
	25.0		IC = 10 mA
ï2
S21e	20.0
ï
Gain	15.0
Power	10.0
Insertion	5.0
	0.0
			1.0										10.0
	0.1

Frequency f (GHz)

μPA826TC

FEEDBACK CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

	0.400
			f = 1 MHz
(pF)
Cre	0.300
Capacitance	0.200
Feedback
	0.100
	0.000
			10											100
	1
			Collector to Base Voltage											VCB (V)

4	Data Sheet P14553EJ1V0DS00