NEC Electronics Inc UPA805T-T1, UPA805T Datasheet
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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
μPA805T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
•Low Noise, High Gain
•Operable at Low Voltage
•Small Feed-back Capacitance Cre = 0.3 pF TYP.
•Built-in 2 Transistors (2 × 2SC4958)
ORDERING INFORMATION
PART NUMBER |
QUANTITY |
PACKING STYLE |
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μPA805T |
Loose products |
Embossed tape 8 mm wide. Pin 6 (Q1 |
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(50 PCS) |
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) |
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face to perforation side of the tape. |
μPA805T-T1 |
Taping products |
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(3 KPCS/Reel) |
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Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER |
SYMBOL |
RATING |
UNIT |
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Collector to Base Voltage |
VCBO |
9 |
V |
Collector to Emitter Voltage |
VCEO |
6 |
V |
Emitter to Base Voltage |
VEBO |
2 |
V |
Collector Current |
IC |
10 |
mA |
Total Power Dissipation |
PT |
60 in 1 element |
mW |
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120 in 2 elementsNote |
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Junction Temperature |
Tj |
150 |
˚C |
Storage Temperature |
Tstg |
–65 to +150 |
˚C |
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Note 110 mW must not be exceeded in 1 element.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
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+0.1 |
–0 |
2.0±0.2 |
1.3 |
0.65 0.65 |
2 1 |
Y X |
5 6 |
0.2 |
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3 |
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4 |
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0.9±0.1 |
0.7 |
+0.1 |
–0 |
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0~0.1 |
0.15 |
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PIN CONFIGURATION (Top View)
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6 |
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5 |
4 |
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Q1 |
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Q2 |
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1 |
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3 |
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PIN CONNECTIONS |
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1. |
Collector (Q1) |
4. |
Emitter (Q2) |
2. |
Emitter (Q1) |
5. |
Base (Q2) |
3. |
Collector (Q2) |
6. |
Base (Q1) |
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
The information in this document is subject to change without notice.
Document No. ID-3639
(O.D. No. ID-9146)
Date Published |
April 1995 P |
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Printed in Japan |
© |
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1995 |
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μPA805T |
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ELECTRICAL CHARACTERISTICS |
(TA = 25 °C) |
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PARAMETER |
SYMBOL |
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CONDITION |
MIN. |
TYP. |
MAX. |
UNIT |
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Collector Cutoff Current |
ICBO |
VCB = 5 V, IE = 0 |
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0.1 |
μA |
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Emitter Cutoff Current |
IEBO |
VEB = 1 V, IC = 0 |
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0.1 |
μA |
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DC Current Gain |
hFE |
VCE = 3 V, IC = 5 mANote 1 |
75 |
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150 |
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Gain Bandwidth Product |
fT |
VCE = 3 |
V, IC = 7 mA, f = 2 GHz |
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12 |
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GHz |
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Feed-back Capacitance |
Cre |
VCB = 3 V, IE = 0, f = 1 MHzNote 2 |
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0.3 |
0.5 |
pF |
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Insertion Power Gain |
|S21|2 |
VCE = 3 |
V, IC = 5 mA, f = 2 GHz |
7 |
8.5 |
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dB |
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Noise Figure |
NF |
VCE = 3 |
V, IC = 3 mA, f = 2 GHz |
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2.5 |
4 |
dB |
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hFE Ratio |
hFE1/hFE2 |
VCE = 3 |
V, IC = 5 mA |
0.85 |
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A smaller value among |
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hFE of hFE1 = Q1, Q2 |
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A larger value among |
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hFE of hFE2 = Q1, Q2 |
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Notes 1. Pulse Measurement: Pw ≤ 350 μs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank |
KB |
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Marking |
T82 |
hFE Value |
75 to 150 |
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TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
(mW) |
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Free Air |
200 |
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PT |
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Dissipation |
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2 Elements in Total |
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100 |
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120 mW |
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PowerTotal |
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Per Element |
60 mW |
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0 |
50 |
100 |
150 |
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Ambient Temperature TA (°C) |
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COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
(mA)IC |
40 |
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30 |
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Current |
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20 |
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400 |
μ A |
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500 |
μ A |
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Collector |
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300 |
μ A |
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10 |
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200μ A |
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IB = |
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100μ A |
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0 |
2 |
4 |
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6 |
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Collector to Emitter Voltage VCE (V) |
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Collector Current IC (mA)
DC Current Gain hFE
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
50
VCE = 3 V
40
30
20
10
0 |
0.5 |
1 |
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
200
100
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5 V |
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VCE |
= 3 |
V |
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0 |
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0.1 |
0.5 |
1 |
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5 |
10 |
50 |
100 |
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Collector Current IC (mA)
2