NEC UPA606T Datasheet
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μPA606T
N-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
FOR SWITCHING
The μPA606T is a mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs.
FEATURES
•Two MOS FET elements in package the same size as SC-59
•Complement to μPA607T
•Automatic mounting supported
PACKAGE |
DIMENSIONS |
(in millimeters) |
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–0.15 |
0.32 –0.05+0.1 |
0.16 |
+0.1 |
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+0.1 |
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–0.06 |
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0.65 |
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2.8±0.2 |
1.5 |
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0 to 0.1 |
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0.95 |
0.95 |
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0.8 |
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1.9 |
1.1 to 1.4 |
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2.9 ±0.2 |
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PIN CONNECTION
6 5 4
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER |
SYMBOL |
RATINGS |
UNIT |
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Drain to Source Voltage |
VDSS |
50 |
V |
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Gate to Source Voltage |
VGSS |
±20 |
V |
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Drain Current (DC) |
ID(DC) |
100 |
mA |
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Drain Current (pulse) |
ID(pulse)* |
200 |
mA |
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Total Power Dissipation |
PT |
300 (Total) |
mW |
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Channel Temperature |
Tch |
150 |
˚C |
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Storage Temperature |
Tstg |
–55 to +150 |
˚C |
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* PW ≤ 10 ms, Duty Cycle ≤ 50 %
1 |
2 |
3 |
1.Source 1
2.Gate 1
3.Drain 2
4.Source 2
5.Gate 2
6.Drain 1
Document No. G11253EJ1V0DS00 (1st edition) |
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Date Published June 1996 P |
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Printed in Japan |
© |
1996 |
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μPA606T |
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ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) |
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PARAMETER |
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Drain Cut-off Current |
IDSS |
VDS = 50 V, VGS = 0 |
– |
– |
1.0 |
μA |
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Gate Leakage Current |
IGSS |
VGS = ±20 V, VDS = 0 |
– |
– |
±1.0 |
μA |
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Gate Cut-off Voltage |
VGS(off) |
VDS = 5.0 V, ID = 1.0 μA |
0.8 |
1.4 |
1.8 |
V |
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Forward Transfer Admittance |
|yfs| |
VDS = 5.0 V, ID = 10 mA |
20 |
– |
– |
mS |
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Drain to Source On-State Resistance |
RDS(on)1 |
VGS = 4.0 V, ID = 10 mA |
– |
19 |
30 |
Ω |
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Drain to Source On-State Resistance |
RDS(on)2 |
VGS = 10 V, ID = 10 mA |
– |
15 |
25 |
Ω |
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Input Capacitance |
Ciss |
VDS = 5.0 V, VGS = 0, f = 1.0 MHz |
– |
16 |
– |
pF |
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Output Capacitance |
Coss |
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– |
12 |
– |
pF |
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Reverse Transfer Capacitance |
Crss |
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– |
3 |
– |
pF |
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Turn-On Delay Time |
td(on) |
VGS(on) = 5.0 V, RG = 10 Ω, VDD = 5.0 V, |
– |
17 |
– |
ns |
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ID = 10 mA, RL = 500 Ω |
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Rise Time |
tr |
– |
10 |
– |
ns |
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Turn-Off Delay Time |
td(off) |
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– |
68 |
– |
ns |
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Fall Time |
tf |
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– |
38 |
– |
ns |
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SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED)
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VGS |
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90 % |
RL |
Gate |
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VGS(on) |
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DUT |
voltage |
0 |
10 % |
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waveform |
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VDD |
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90 % |
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RG |
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ID |
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90 % |
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PG. |
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ID |
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Drain |
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10 % |
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10 % |
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current |
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waveform |
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VGS |
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td(on) |
tr |
td(off) |
tf |
0 |
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τ |
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ton |
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toff |
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τ = 1 μs |
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Duty Cycle ≤ 1 % |
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2