NEC PS7142-2B, PS7142L-1A, PS7142L-1B, PS7142L-1C, PS7142L-2A Datasheet

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DATA SHEET

Solid State Relay

OCMOS FET

PS7142-1C,PS7142L-1C

8-PIN DIP, 400 V BREAK DOWN VOLTAGE, TRANSFER TYPE

2-ch Optical Coupled MOS FET

DESCRIPTION

The PS7142-1C and PS7142L-1C are transfer type solid state relays containing normally open (N.O.) contact and normally close (N.C.) contact on output side.

They are suitable for analog signal control because of their low offset and high linearity.

The PS7142L-1C has a surface mount type lead.

FEATURES

2 channel type (1 a + 1 b output)

Low LED operating current (IF = 2 mA)

Designed for AC/DC switching line changer

Small package (8-pin DIP)

Low offset voltage

PS7142L-1C: Surface mount type

APPLICATIONS

Exchange equipment

Measurement equipment

FA/OA equipment

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P13863EJ4V0DS00 (4th edition)

The mark • shows major revised points.

 

 

Date Published October 1999 NS CP(K)

©

 

1998, 1999

Printed in Japan

 

 

 

 

NEC PS7142-2B, PS7142L-1A, PS7142L-1B, PS7142L-1C, PS7142L-2A Datasheet

PS7142-1C,PS7142L-1C

PACKAGE DIMENSIONS (in millimeters)

PS7142-1C

 

 

9.25±0.5

 

TOP VIEW

 

 

 

 

8

7

6

5

1. LED Anode

 

 

 

 

 

 

2.

LED Cathode

 

 

 

 

 

 

3. LED Anode

 

 

 

 

 

 

4.

LED Cathode

 

 

 

 

 

 

5.

MOS FET (N.O.)

 

 

 

 

 

 

6.

MOS FET (N.O.)

 

 

1

2

3

4

7.

MOS FET (N.C.)

 

 

8.

MOS FET (N.C.)

 

 

 

 

 

 

 

 

 

 

7.62

 

 

 

 

 

 

 

6.5±0.5

 

 

4.15±0.3

3.5±0.3

 

 

 

 

 

 

3.3±0.3

 

 

 

0 to 15˚

 

 

 

 

0.5±0.1

 

 

 

 

 

 

2.54

 

 

 

 

 

 

1.34±0.1

 

 

 

 

 

 

0.25 M

 

 

 

 

 

 

 

 

PS7142L-1C

 

 

 

 

 

 

 

9.25±0.5

 

TOP VIEW

 

 

 

 

8

7

6

5

1. LED Anode

 

 

 

 

 

 

2.

LED Cathode

 

 

 

 

 

 

3. LED Anode

 

 

 

 

 

 

4.

LED Cathode

 

 

 

 

 

 

5.

MOS FET (N.O.)

 

 

 

 

 

 

6.

MOS FET (N.O.)

 

 

1

2

3

4

7.

MOS FET (N.C.)

 

 

8.

MOS FET (N.C.)

 

6.5±0.5

3.5±0.3

+0.10 –0.05

0.10

 

0.9±0.25

1.34±0.1

2.54

0.25 M

9.60±0.4

2

Data Sheet P13863EJ4V0DS00

PS7142-1C,PS7142L-1C

ORDERING INFORMATION

Part Number

Package

Packing Style

Application Part Number*1

 

 

 

 

PS7142-1C

8-pin DIP

Magazine case 50 pcs

PS7142-1C

 

 

 

 

PS7142L-1C

 

 

PS7142L-1C

 

 

 

 

PS7142L-1C-E3

 

Embossed Tape 1 000 pcs/reel

 

 

 

 

 

PS7142L-1C-E4

 

 

 

 

 

 

 

*1 For the application of the Safety Standard, following part number should be used.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)

 

Parameter

Symbol

Ratings

Unit

 

 

 

 

 

Diode

Forward Current (DC)

IF

50

mA

 

 

 

 

 

 

Reverse Voltage

VR

5.0

V

 

 

 

 

 

 

Power Dissipation

PD

50

mW/ch

 

 

 

 

 

 

Peak Forward Current *1

IFP

1

A

 

 

 

 

 

MOS FET

Break Down Voltage

VL

400

V

 

 

 

 

 

 

Continuous Load Current

IL

200

mA

 

 

 

 

 

 

Pulse Load Current *2

ILP

400

mA

 

(AC/DC Connection)

 

 

 

 

 

 

 

 

 

Power Dissipation

PD

375

mW/ch

 

 

 

 

 

Isolation Voltage *3

BV

1 500

Vr.m.s.

 

 

 

 

Total Power Dissipation

PT

850

mW

 

 

 

 

Operating Ambient Temperature

TA

40 to +80

°C

 

 

 

 

Storage Temperature

Tstg

40 to +100

°C

 

 

 

 

 

*1 PW = 100 μs, Duty Cycle = 1 %

*2 PW = 100 ms, 1 shot

*3 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output

RECOMMENDED OPERATING CONDITIONS (TA = 25 °C)

Parameter

Symbol

MIN.

TYP.

MAX.

Unit

 

 

 

 

 

 

LED Operating Current

IF

2

10

20

mA

 

 

 

 

 

 

LED Off Voltage

VF

0

 

0.5

V

 

 

 

 

 

 

Data Sheet P13863EJ4V0DS00

3

PS7142-1C,PS7142L-1C

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

 

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

 

 

 

 

 

 

 

 

Diode

Forward Voltage

VF

IF = 10 mA

 

1.2

1.4

V

 

 

 

 

 

 

 

 

 

Reverse Current

IR

VR = 5 V

 

 

5.0

μA

 

 

 

 

 

 

 

 

MOS FET

Off-state Leakage Current

ILoff

N.O. : IF = 0 mA, VD = 400 V

 

0.03

1.0

μA

 

 

 

 

 

 

 

 

 

 

 

N.C. : IF = 10 mA, VD = 400 V

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Cout

N.O. : VD = 0 V, f = 1 MHz

 

140

 

pF/ch

 

 

 

 

 

 

 

 

 

 

 

N.C. : VD = 0 V, f = 1 MHz, IF = 10 mA

 

430

 

 

 

 

 

 

 

 

 

 

Coupled

LED On-state Current

IFon

N.O. : IL = 200 mA

 

 

2.0

mA

 

 

 

 

 

 

 

 

 

LED Off-state Current

IFoff

N.C. : IL = 200 mA

 

 

2.0

 

 

 

 

 

 

 

 

 

 

On-state Resistance

Ron1

N.O. : IF = 10 mA, IL = 10 mA

 

8

12

W

 

 

 

 

 

 

 

 

 

 

 

N.C. : IF = 0 mA, IL = 10 mA

 

7

12

 

 

 

 

 

 

 

 

 

 

 

Ron2

N.O. : IF = 10 mA, IL = 200 mA, t £ 10 ms

 

7

10

 

 

 

 

 

 

 

 

 

 

 

 

N.C. : IF = 0 mA, IL = 200 mA, t £ 10 ms

 

7

10

 

 

 

 

 

 

 

 

 

 

Turn-on Time *1

ton (N.O.)

IF = 10 mA, VO = 5 V, PW ³ 10 ms

 

0.3

2.0

ms

 

 

 

 

 

 

 

 

 

 

ton (N.C.)

 

 

0.03

0.2

 

 

 

 

 

 

 

 

 

 

Turn-off Time *1

toff (N.O.)

 

 

0.03

0.2

 

 

 

 

 

 

 

 

 

 

 

toff (N.C.)

 

 

0.6

2.0

 

 

 

 

 

 

 

 

 

 

Isolation Resistance

RI-O

VI-O = 1.0 kVDC

109

 

 

W

 

 

 

 

 

 

 

 

 

Isolation Capacitance

CI-O

V = 0 V, f = 1 MHz

 

1.1

 

pF/ch

 

 

 

 

 

 

 

 

4

Data Sheet P13863EJ4V0DS00

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