NEC NE334S01-T1, NE334S01-T1B Datasheet

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE334S01

C BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

The NE334S01 is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for TVRO
and another commercial systems.

FEATURES

• Super Low Noise Figure & High Associated Gain

NF = 0.25 dB TYP., Ga = 16.0 dB TYP. at f = 4 GHz

• Gate Width: Wg = 280 mm

ORDERING INFORMATION

PART NUMBER SUPPLYING FORM MARKING
NE334S01-T1 Tape & reel 1000 pcs./reel C
NE334S01-T1B Tape & reel 4000 pcs./reel

ABSOLUTE MAXIMUM RATINGS (TA = 25 °°C)

Drain to Source Voltage VDS 4.0 V
Gate to Source Voltage VGS –3.0 V
Drain Current ID IDSS mA
Total Power Dissipation Ptot 300 mW
Channel Temperature Tch 125
Storage Temperature Tstg –65 to +125°C

°

C

2

0.125 ± 0.05

PACKAGE DIMENSIONS

(Unit: mm)

2.0 ± 0.2

1

C

3

0.65 TYP.

1.9 ± 0.2

1.6

0.4 MAX.

4.0 ± 0.2

2.0 ± 0.2

4

0.5 TYP.

1. Source

2. Drain

3. Source

4. Gate

1.5 MAX.

2.0 ± 0.2

RECOMMENDED OPERATING CONDITION (TA = 25 °°C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. Unit
Drain to Source Voltage VDS 2 2.5 V
Drain Current ID 15 20 mA
Input Power Pin 0 dBm

Document No. P11139EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan

1996©

ELECTRICAL CHARACTERISTICS (TA = 25 °°C)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

NE334S01

Gate to Source Leak Current IGSO 0.5 10
Saturated Drain Current IDSS 20 80 150 mA VDS = 2 V, VGS = 0 V
Gate to Source Cutoff Voltage VGS(off)
Transconductance gm 70 85 mS VDS = 2 V, ID = 14 mA
Noise Figure NF 0.25 0.35 dB VDS = 2 V, ID = 15 mA,
Associated Gain Ga 15.0 16.0 dB f = 4 GHz

-

0.2

-

0.9

-

2.5 V VDS = 2 V, ID = 100 mA

m

AVGS = -3 V

2

TYPICAL CHARACTERISTICS (TA = 25 °°C)

NE334S01

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

500

400

300

200

- Total Power Dissipation - mW

100

tot

P

0 50 100 150 200 250

A

- Ambient Temperature - ˚C

T

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

100

DS

V

80

= 2 V

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

100

VGS = 0 V

80

–0.2 V

60

40

- Drain Current - mA

D

I

20

–0.4 V

–0.6 V

0 12345

V

DS

- Drain to Source Voltage - V

MAXIMUM AVAILABLE GAIN, FORWARD 
INSERTION GAIN vs. FREQUENCY

24

V

DS

= 2 V

D

= 15 mA

I

20

MSG.

60

40

- Drain Current - mA

D

I

20

0

–2.0

GS

- Gate to Source Voltage - V

V

–1.0 0

Gain Calculations

½

S

21

½

MSG. = K =

½

S

12

½

½

S21

MAG. = (K ± K

½

½

S

12

½

2

-

1)

Ö

D

= S11×S22 - S21×S12

1 + ½D

½2 - ½S11

2½S12½½S21

½2 - ½S22

½

16

2

|S

21S

|

12

- Forward Insertion Gain - dB

2

|

8

21S

MSG. - Maximum Stable Gain - dB

MAG. - Maximum Available Gain - dB

|S

4

1

2 4 6 8 10 14 20 30

f - Frequency - GHz

2

½

MAG.

3

S-PARAMETERS

VDS = 2 V, ID = 15 mA

START 2 Ghz, STOP 18 Ghz, STEP 500 Mhz

NE334S01

Marker



1:

4 GHz

2:

8 GHz

3:

12 GHz

4:

16 GHz

5:

18 GHz

S11

1.0

0.5 2.0

3

0 ∞

2

–0.5 –2.0

–1.0

21

S

+90˚

5

4

1

Rmax. = 1

S

12

+90˚

+135˚ +45˚

1

±180˚ 0

–135˚ –45˚

–90˚

S

22

1.0

2

3

5

4

Rmax. = 0.25

+135˚ +45˚

1

2

±180˚ 0

–135˚ –45˚

–90˚

5

3

4

Rmax. = 1.0

0.5 2.0

5

4

0 ∞

–0.5 –2.0

3

2

–1.0

1

Rmax. = 1

4