MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by T2500/D
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies.
•Blocking Voltage to 800 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
T2500
Series
TRIACs
6 AMPERES RMS
200 thru 800 VOLTS
MT2 
MT1
G
CASE 221A-04 (TO-220AB)
STYLE 4
Rating |
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Symbol |
Value |
Unit |
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Repetitive Peak Off-State Voltage(1) |
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VDRM |
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Volts |
(TJ = ±40 to +100°C, Gate Open) |
T2500 B |
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200 |
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D |
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400 |
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M |
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600 |
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N |
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800 |
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On-State Current RMS |
(TC = +80°C) |
IT(RMS) |
6 |
Amps |
(Full Cycle Sine Wave 50 to 60 Hz) |
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Peak Non-repetitive Surge Current |
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ITSM |
60 |
Amps |
(One Full Cycle, 60 Hz, TC = +80°C) |
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Circuit Fusing Considerations |
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I2t |
15 |
A2s |
(t = 8.3 ms) |
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Peak Gate Power |
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PGM |
16 |
Watts |
(TC = +80°C, Pulse Width = 1 μs) |
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Average Gate Power |
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PG(AV) |
0.2 |
Watt |
(TC = +80°C, t = 8.3 ms) |
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Peak Gate Trigger Current (Pulse Width = 10 μs) |
IGTM |
4 |
Amps |
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Operating Junction Temperature Range |
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TJ |
±40 to +100 |
°C |
Storage Temperature Range |
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Tstg |
±40 to +150 |
°C |
1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Motorola, Inc. 1995
T2500 Series
THERMAL CHARACTERISTICS
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Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
2.7 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) |
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Characteristic |
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Symbol |
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Min |
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Typ |
Max |
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Unit |
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Peak Blocking Current |
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IDRM |
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Ð |
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Ð |
2 |
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mA |
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(Rated VDRM, Gate Open,TJ = 100°C) |
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Maximum On-State Voltage (Either Direction)* |
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VTM |
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Ð |
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Ð |
2 |
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Volts |
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(IT = 30 A Peak) |
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Gate Trigger Current (Continuous dc) |
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IGT |
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mA |
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(VD = 12 Vdc, RL = 12 Ohms) |
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Ð |
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10 |
25 |
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MT2(+), G(+) |
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MT2(+), G(±) |
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Ð |
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20 |
60 |
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MT2(±), G(±) |
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Ð |
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15 |
25 |
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MT2(±), G(+) |
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Ð |
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30 |
60 |
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Gate Trigger Voltage (Continuous dc) (All Quadrants) |
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VGT |
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Ð |
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1.25 |
2.5 |
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Volts |
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(VD = 12 Vdc, RL = 12 Ohms) |
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(VD = VDROM, RL = 125 Ohms, TC = 100°C) |
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0.2 |
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Ð |
Ð |
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Holding Current (Either Direction) |
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IH |
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Ð |
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15 |
30 |
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mA |
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(Main Terminal Voltage = 12 Vdc, Gate Open, |
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Initiating Current = 150 mA) |
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Gate Controlled Turn-On Time |
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tgt |
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Ð |
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1.6 |
Ð |
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μs |
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(Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 μs) |
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Critical Rate-of-Rise of Commutation Voltage |
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dv/dt(c) |
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Ð |
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10 |
Ð |
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V/μs |
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(Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms, |
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Gate Unenergized, TC = 80°C) |
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Critical Rate-of-Rise of Off-State Voltage |
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dv/dt |
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V/μs |
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(Rated VDRM, Exponential Voltage Rise, |
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Gate Open, TC = 100°C) |
T2500B |
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Ð |
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100 |
Ð |
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T2500D,M,N |
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Ð |
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75 |
Ð |
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*Pulse Test: Pulse Width p 300 μs, Duty Cycle p 2%.
QUADRANT DEFINITIONS
MT2(+)
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QUADRANT II |
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QUADRANT I |
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MT2(+), G(±) |
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MT2(+), G(+) |
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ELECTRICAL CHARACTERISTICS of RECOMMENDED |
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BIDIRECTIONAL SWITCHES |
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G(±) |
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G(+) |
USAGE |
General |
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QUADRANT III |
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QUADRANT IV |
PART NUMBER |
MBS4991 |
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MBS4992 |
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VS |
6.0 ± 10 V |
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7.5 ± 9.0 V |
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IS |
350 μA Max |
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120 μA Max |
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MT2(±), G(±) |
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MT2(±), G(+) |
VS1 ± VS2 |
0.5 V Max |
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0.2 V Max |
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Temperature |
0.02%/°C Typ |
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MT2(±) |
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Coefficient |
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See AN-526 for Theory and Characteristics of Silicon Bidirectional Switches.
2 |
Motorola Thyristor Device Data |
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