Motorola T2323M, T2323D, T2323B, T2322M, T2322D Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by T2322/D

Sensitive Gate Triacs

Silicon Bidirectional Triode Thyristors

. . . designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances their use in low-power phase control and load-switching applications.

•Very High Gate Sensitivity

•Low On-State Voltage at High Current Levels

•Glass-Passivated Chip for Stability

•Small, Rugged Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability

T2322

T2323

Series*

*Motorola preferred devices

SENSITIVE GATE TRIACs 2.5 AMPERES RMS 200 thru 600 VOLTS

G

MT2

MT1

MT2

MT1

CASE 77-08

G

(TO-225AA)

STYLE 5

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating

Suffix

Symbol

Value

Unit

Peak Repetitive Off-State Voltage(1)

B

V

200

Volts

(TJ = 25 to 100°C, Gate Open)

D

DRM

400

T2322, T2323

M

600

RMS On-State Current (TC = 70°C)

IT(RMS)

2.5

Amps

(Full-Cycle Sine Wave 50 to 60 Hz)

Peak Non-repetitive Surge Current

ITSM

25

Amps

(One Full Cycle, 60 Hz)

Circuit Fusing

I2t

2.6

A2s

(t = 8.3 ms)

Peak Gate Power (1 μs)

PGM

10

Watts

Average Gate Power (TC = 60°C + 38.3 ms)

PG(AV)

0.15

Watt

Peak Gate Current (1 μs)

IGM

0.5

Amp

Operating Junction Temperature Range

TJ

±40 to +110

°C

Storage Temperature Range

Tstg

±40 to +150

°C

Mounting Torque (6-32 Screw)(2)

Ð

8

in. lb.

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

2.Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting Torque in excess of 6 in. lb. does not

appreciably lower case-to-sink thermal resistance. Main terminal 2 and heat-sink contact pad are common.

For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds. Consult factory for lead bending options.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

T2322 T2323 Series

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

3.5

°C/W

Thermal Resistance, Junction to Ambient

RθJA

60

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current

TJ = 25°C

IDRM

Ð

Ð

10

μA

(VD = Rated VDRM, Gate Open)

TJ = 100°C

Ð

0.2

0.75

mA

Peak On-State Voltage*

VTM

Ð

1.7

2.6

Volts

(ITM = 10 A)

T2323 Series

T2322 Series

Ð

1.7

2.2

Gate Trigger Current (Continuous dc)

IGT

mA

(VD = 12 V, RL = 30 Ω)

All Modes

T2322 Series

Ð

Ð

10

MT2(+), G(+); MT2(±), G(±)

T2323 Series

Ð

Ð

25

MT2(+), G(±); MT2(±),I G(+)

T2323 Series

Ð

Ð

40

Gate Trigger Voltage (Continuous dc)

VGT

Volts

(VD = 12 Vdc, RL = 30 Ω, TC = 25°C)

Ð

1

2.2

(VD = VDRM, RL = 125 Ω, TC = 100°C)

0.15

Ð

Ð

Holding Current

IH

Ð

15

30

mA

(VD = 12 V, ITM = 150 mA, Gate Open)

Gate Controlled Turn-On Time

tgt

Ð

1.8

2.5

μs

(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA)

Critical Rate-of-Rise of Off-State Voltage

dv/dt

10

100

Ð

V/μs

(VD = Rated VDRM, Exponential Waveform, TC = 100°C)

Critical Rate-of-Rise of Commutation Voltage

dv/dt(c)

1

4

Ð

V/μs

(VD = Rated VDRM, ITM = 3.5 A pk, Commutating

di/dt = 1.26 A/ms, Gate Unenergized, TC = 90°C)

*Pulse Test: Pulse Width p 300 μs, Duty Cycle p 2%.

2	Motorola Thyristor Device Data