Motorola S2800A, S2800B, S2800D, S2800F, S2800M Datasheet
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by S2800/D
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.
•Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
•Blocking Voltage to 800 Volts
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
S2800
Series
SCRs
10 AMPERES RMS
50 thru 800 VOLTS
G
A
K
CASE 221A-04 (TO-220AB)
STYLE 3
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Rating |
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Symbol |
Value |
Unit |
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Peak Repetitive Forward and Reverse Blocking Voltage(1) |
VRRM |
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Volts |
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(TJ = 25 to 100°C, Gate Open) |
F |
VDRM |
50 |
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A |
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100 |
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S2800 |
B |
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200 |
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D |
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400 |
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M |
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600 |
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N |
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800 |
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Peak Non-repetitive Reverse Voltage and |
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VRSM |
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Volts |
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Non-Repetitive Off-State Voltage(1) |
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V |
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F |
DSM |
75 |
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A |
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125 |
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S2800 |
B |
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250 |
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D |
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500 |
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M |
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700 |
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N |
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900 |
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RMS Forward Current |
TC = 75°C |
IT(RMS) |
10 |
Amps |
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(All Conduction Angles) |
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Peak Forward Surge Current |
(1 Cycle, Sine Wave, 60 Hz, TC = 80°C) |
ITSM |
100 |
Amps |
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Circuit Fusing Considerations (t = 8.3 ms) |
|
I2t |
40 |
A2s |
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Forward Peak Gate Power (t p 10 μs) |
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PGM |
16 |
Watts |
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Forward Average Gate Power |
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PG(AV) |
0.5 |
Watt |
Operating Junction Temperature Range |
|
TJ |
±40 to +100 |
°C |
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Storage Temperature Range |
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Tstg |
±40 to +150 |
°C |
1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Motorola, Inc. 1995
S2800 Series
THERMAL CHARACTERISTICS
Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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2 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) |
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Characteristic |
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Symbol |
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Min |
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Typ |
Max |
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Unit |
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Peak Forward or Reverse Blocking Current |
TC = 25°C |
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IDRM, IRRM |
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Ð |
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Ð |
10 |
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μA |
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(VAK = Rated VDRM or VRRM, Gate Open) |
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TC = 100°C |
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Ð |
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Ð |
2 |
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mA |
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Instantaneous On-State Voltage, |
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VT |
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Ð |
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1.7 |
2 |
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Volts |
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(ITM = 30 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%) |
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Gate Trigger Current (Continuous dc) |
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IGT |
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Ð |
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8 |
15 |
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mA |
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(VD = 12 Vdc, RL = 30 Ohms) |
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Gate Trigger Voltage (Continuous dc) |
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VGT |
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Ð |
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0.9 |
1.5 |
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Volts |
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(VD = 12 Vdc, RL = 30 Ohms) |
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Holding Current |
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IH |
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Ð |
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10 |
20 |
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mA |
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(Gate Open, VD = 12 Vdc, IT = 150 mA) |
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Gate Controlled Turn-On Time |
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tgt |
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Ð |
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1.6 |
Ð |
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μs |
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(VD = Rated VDRM, ITM = 2 A, IGR = 80 mA) |
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Circuit Commutated Turn-Off Time |
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tq |
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Ð |
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25 |
Ð |
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μs |
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(VD = VDRM, ITM = 2 A, Pulse Width = 50 μs, |
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dv/dt = 200 V/μs, di/dt = 10 A/μs, TC = 75°C) |
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Critical Rate-of-Rise of Off-State Voltage |
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dv/dt |
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Ð |
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100 |
Ð |
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V/μs |
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(VD = Rated VDRM, Exponential Rise, TC = 100°C) |
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TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
100
90
80
70
0
FIGURE 1 ± CURRENT DERATING |
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FIGURE 2 ± POWER DISSIPATION |
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HALF-WAVE |
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(WATTS) |
12 |
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CURRENT WAVEFORM: A SINUSOIDAL |
10 |
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MAXIMUM |
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LOAD: RESISTIVE OR INDUCTIVE |
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DISSIPATION |
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IT(RMS) |
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8 |
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MAXIMUM |
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POWER |
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IT(AV) |
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6 |
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AVERAGE |
4 |
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HALF-WAVE |
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2 |
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CURRENT WAVEFORM: A SINUSOIDAL |
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LOAD: RESISTIVE OR INDUCTIVE |
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, |
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RMS CURRENT |
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(AV) |
0 |
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AV CURRENT |
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P |
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2 |
4 |
6 |
8 |
10 |
0 |
2 |
4 |
6 |
8 |
10 |
I |
, I |
, ON-STATE CURRENT (AMPS) |
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IT(AV), IT(RMS), MAXIMUM ON-STATE CURRENT (AMP) |
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T(AV) |
T(RMS) |
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2 |
Motorola Thyristor Device Data |
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