MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by M1MA151KT1/D
Single Silicon Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC±59 package which is designed for low power surface mount applications.
•Fast trr, < 3.0 ns
•Low CD, < 2.0 pF
•Available in 8 mm Tape and Reel
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel. CATHODE 3
M1MA151KT1
M1MA152KT1
Motorola Preferred Devices
SC±59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V±100 mA SURFACE MOUNT
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1 |
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1 |
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ANODE |
NO CONNECTION |
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MAXIMUM RATINGS (TA = 25°C) |
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Rating |
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Symbol |
Value |
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Unit |
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CASE 318D±03, STYLE 2 |
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SC±59 |
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Reverse Voltage |
M1MA151KT1 |
VR |
40 |
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Vdc |
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M1MA152KT1 |
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80 |
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Peak Reverse Voltage |
M1MA151KT1 |
VRM |
40 |
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Vdc |
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M1MA152KT1 |
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80 |
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Forward Current |
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IF |
100 |
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mAdc |
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Peak Forward Current |
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IFM |
225 |
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mAdc |
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Peak Forward Surge Current |
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IFSM(1) |
500 |
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mAdc |
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THERMAL CHARACTERISTICS |
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Rating |
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Symbol |
Max |
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Unit |
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Power Dissipation |
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PD |
200 |
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mW |
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Junction Temperature |
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TJ |
150 |
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°C |
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Storage Temperature |
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Tstg |
± 55 to + 150 |
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°C |
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic |
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Symbol |
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Condition |
Min |
Max |
Unit |
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Reverse Voltage Leakage Current |
M1MA151KT1 |
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IR |
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VR = 35 V |
Ð |
0.1 |
μAdc |
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M1MA152KT1 |
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VR = 75 V |
Ð |
0.1 |
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Forward Voltage |
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VF |
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IF = 100 mA |
Ð |
1.2 |
Vdc |
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Reverse Breakdown Voltage |
M1MA151KT1 |
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VR |
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IR = 100 μA |
40 |
Ð |
Vdc |
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M1MA152KT1 |
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80 |
Ð |
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Diode Capacitance |
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CD |
VR = 0, f = 1.0 MHz |
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2.0 |
pF |
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Reverse Recovery Time |
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t |
(2) |
I |
= 10 mA, V |
R |
= 6.0 V, |
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3.0 |
ns |
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rr |
F |
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RL = 100 Ω, Irr = 0.1 IR |
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1. t = 1 SEC |
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2. trr Test Circuit |
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Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
Motorola, IncSmall±Signal. 1996 |
Transistors, FETs and Diodes Device Data |
1 |
M1MA151KT1 M1MA152KT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT |
INPUT PULSE |
OUTPUT PULSE |
tr |
tp |
trr |
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IF |
t |
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t |
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RL |
10% |
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Irr = 0.1 IR |
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A |
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90% |
IF = 10 mA |
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VR |
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VR = 6 V |
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tp = 2 μs |
RL = 100 Ω |
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tr = 0.35 ns |
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DEVICE MARKING Ð EXAMPLE
Marking Symbol
Type No. |
151K |
152K |
MHX |
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Symbol |
MH |
MI |
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The ªXº represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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