MOTOROLA J310ZL1, J310RLRP, J310, J308 Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by J308/D
JFET VHF/UHF Amplifiers
N–Channel — Depletion
GATE
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V Gate–Source Voltage V Forward Gate Current I Total Device Dissipation @ TA = 25°C
Derate above 25°C Junction Temperature Range T Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (T
Characteristic
DS GS
GF
P
D
J
stg
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –1.0 µAdc, VDS = 0) Gate Reverse Current
(VGS = –15 Vdc, VDS = 0, TA = 25°C)
(VGS = –15 Vdc, VDS = 0, TA = +125°C) Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc) J308
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 10 Vdc, VGS = 0) J308
Gate–Source Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
(1)
SMALL–SIGNAL CHARACTERISTICS
Common–Source Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) J308
Common–Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common–Gate Power Gain
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 3.0%.
350
2.8 –65 to +125 °C –65 to +150 °C
J309 J310
J309 J310
J309 J310
J308
1 DRAIN
J309 J310
3
2 SOURCE
mW
mW/°C
Symbol Min Typ Max Unit
V
(BR)GSS
I
GSS
V
GS(off)
I
DSS
V
GS(f)
Re(yis)
Re(yos) 0.25 mmhos
G
pg
–25 Vdc
— —
–1.0 –1.0 –2.0
12 12 24
1.0 Vdc
— — —
16 dB
Motorola Preferred Devices
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
— —
— — —
— — —
0.7
0.7
0.5
–1.0 –1.0
–6.5 –4.0 –6.5
60 30 60
— — —
nAdc µAdc
Vdc
mAdc
mmhos
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
J308 J309 J310
ELECTRICAL CHARACTERISTICS
Characteristic
(TA = 25°C unless otherwise noted) (Continued)
SMALL–SIGNAL CHARACTERISTICS (continued)
Common–Source Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common–Gate Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common–Source Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308
Common–Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Common–Gate Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308
Common–Gate Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308
Gate–Drain Capacitance
(VDS = 0, VGS = –10 Vdc, f = 1.0 MHz)
Gate–Source Capacitance
(VDS = 0, VGS = –10 Vdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz)
Equivalent Short–Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
J309 J310
J309 J310
J309 J310
Symbol Min Typ Max Unit
Re(yfs) 12 mmhos
Re(yig) 12 mmhos
g
fs
g
os
g
fg
g
og
C
gd
C
gs
NF 1.5 dB
e
n
8000
10000
8000
250 µmhos
— — —
— — —
1.8 2.5 pF
4.3 5.0 pF
10
— — —
13000 13000 12000
150 100 150
20000 20000 18000
— — —
— — —
µmhos
µmhos
µmhos
nVńHz
Ǹ
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
J308 J309 J310
50
50
310
F
W
T
T
Y
SOURCE
Figure 1. 450 MHz Common–Gate Amplifier Test Circuit
70 60
50
40
30
, DRAIN CURRENT (mA)I
20
D
10
–5.0 –4.0 –3.0 –2.0
VDS = 10 V
I
DSS
+25°C
ID – VGS, GATE–SOURCE VOLTAGE (VOLTS)
I
– VGS, GATE–SOURCE CUTOFF VOLTAGE (VOLTS)
DSS
Figure 2. Drain Current and Transfer
Characteristics versus Gate–Source V oltage
U
C3
L1
C1
C5
1.0 k
+V
DD
C1 = C2 = 0.8 – 10 pF, JFD #MVM010W. C3 = C4 = 8.35 pF Erie #539–002D. C5 = C6 = 5000 pF Erie (2443–000). C7 = 1000 pF, Allen Bradley #FA5C. RFC = 0.33 µH Miller #9230–30. L1 = One Turn #16 Cu, 1/4 I.D. (Air Core). L2P = One Turn #16 Cu, 1/4 I.D. (Air Core). L2S = One Turn #16 Cu, 1/4 I.D. (Air Core).
70
+25°C
+150°C
+150°C
60
50
40
30
20
10
0
TA = –55°C
+25°C
–55°C
–1.0 0
C7
, SATURATION DRAIN CURRENT (mA)
DSS
I
L2
P
C2
C6
RFC
35 30
VDS = 10 V f = 1.0 MHz
25
20
15
10
5.0
, FORWARD TRANSCONDUCTANCE (mmhos)Y
fs
0
5.0 4.0 3.0 2.0
LOAD
L2
S
C4
TA = –55°C
+25°C
+150°C
–55°C
+150°C
1.0 0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 3. Forward Transconductance
versus Gate–Source V oltage
+25°C
100 k
µ
Y
V
GS(off)
V
GS(off)
fs
= –2.3 V = = –5.7 V =
ANCE ( mhos)
10 k
RANSCONDUC
1.0 k
ARD OR
,
fs
100
0.01 0.10.2 0.3 0.5 1.0 2.03.0 5.0 10 20 30 50 100
Figure 4. Common–Source Output
Admittance and Forward Transconductance
Y
os
ID, DRAIN CURRENT (mA)
versus Drain Current
1.0 k
Y
fs
µ
100
10
, OUTPUT ADMITTANCE ( mhos)Y
1.0
Motorola Small–Signal Transistors, FETs and Diodes Device Data
os
10
7.0
4.0
CAPACITANCE (pF)
1.0 0
5.0 4.0 3.0 2.0 1.0 06.07.08.09.010
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 5. On Resistance and Junction
Capacitance versus Gate–Source V oltage
120
R
DS
96
72
C
gs
48
, ON RESISTANCE (OHMS)R
DS
C
gd
24
0
3
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