Motorola C122B1, C122N1, C122F1, C122D1, C122A1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Silicon Controlled Rectifiers

Reverse Blocking Triode Thyristors

. . . designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.

•Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability

•Blocking Voltage to 800 Volts

•Different Leadform Configurations,

Suffix (2) thru (6) available, see Leadform Options (Section 4) for Information

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

C122( )1

Series

SCRs

8 AMPERES RMS

50 thru 800 VOLTS

G

A K

CASE 221A-04 (TO-220AB)

STYLE 3

Rating		Symbol	Value	Unit
Repetitive Peak Off-State Voltage(1) (T	= 25 to 100°C, Gate Open)	V		Volts
J		DRM
Repetitive Peak Reverse Voltage	C122F1	VRRM	50
	C122A1		100
	C122B1		200
	C122D1		400
	C122M1		600
	C122N1		800
Peak Non-repetitive Reverse Voltage(1)	C122F1	VRSM	75	Volts
	C122A1		200
	C122B1		300
	C122D1		500
	C122M1		700
	C122N1		800
Forward Current RMS	TC p 75°C	IT(RMS)	8	Amps
(All Conduction Angles)
Peak Forward Surge Current		ITSM	90	Amps
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations		I2t	34	A2s
(t = 8.3 ms)

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.) positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

36	Motorola Thyristor Device Data