MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.
•Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
•Blocking Voltage to 800 Volts
•Different Leadform Configurations,
Suffix (2) thru (6) available, see Leadform Options (Section 4) for Information
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
C122( )1
Series
SCRs
8 AMPERES RMS
50 thru 800 VOLTS
G
A K
CASE 221A-04 (TO-220AB)
STYLE 3
Rating |
Symbol |
Value |
Unit |
|
|
|
|
|
|
Repetitive Peak Off-State Voltage(1) (T |
= 25 to 100°C, Gate Open) |
V |
|
Volts |
J |
|
DRM |
|
|
Repetitive Peak Reverse Voltage |
C122F1 |
VRRM |
50 |
|
|
C122A1 |
|
100 |
|
|
C122B1 |
|
200 |
|
|
C122D1 |
|
400 |
|
|
C122M1 |
|
600 |
|
|
C122N1 |
|
800 |
|
|
|
|
|
|
Peak Non-repetitive Reverse Voltage(1) |
C122F1 |
VRSM |
75 |
Volts |
|
|
|
||
|
C122A1 |
|
200 |
|
|
C122B1 |
|
300 |
|
|
C122D1 |
|
500 |
|
|
C122M1 |
|
700 |
|
|
C122N1 |
|
800 |
|
|
|
|
|
|
Forward Current RMS |
TC p 75°C |
IT(RMS) |
8 |
Amps |
(All Conduction Angles) |
|
|
|
|
|
|
|
|
|
Peak Forward Surge Current |
|
ITSM |
90 |
Amps |
(1/2 Cycle, Sine Wave, 60 Hz) |
|
|
|
|
|
|
|
|
|
Circuit Fusing Considerations |
|
I2t |
34 |
A2s |
(t = 8.3 ms) |
|
|
|
|
|
|
|
|
|
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.) positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
36 |
Motorola Thyristor Device Data |