Mitsubishi TM130GZ-M, TM130GZ-H, TM130EZ-M, TM130EZ-H, TM130RZ-M Datasheet

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Mitsubishi TM130GZ-M, TM130GZ-H, TM130EZ-M, TM130EZ-H, TM130RZ-M Datasheet

MITSUBISHI THYRISTOR MODULES

TM130RZ/EZ/GZ-M,-H

HIGH POWER GENERAL USE

INSULATED TYPE

TM130RZ/EZ/GZ-M,-H

IT (AV)

Average on-state current ..........

130A

IF (AV)

Average forward current ..........

130A

VRRM Repetitive peak reverse voltage

........ 400/800V

VDRM Repetitive peak off-state voltage

........ 400/800V

MIX DOUBLE ARMS

Insulated Type

UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

(RZ Type)

APPLICATION

DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

3–φ6.5

 

 

 

 

 

 

3–M8

 

 

 

 

 

 

A1

K1

K2

A2

 

 

20

 

 

 

40

 

 

 

 

 

 

K1

 

 

6

 

 

 

G1

 

 

18

16

18

16

 

 

 

 

 

 

 

30

32

30

 

 

 

 

68.5

 

68.5

 

 

 

 

 

150

 

 

 

 

 

 

 

Tab#110,

 

 

 

 

t=0.5

 

 

 

 

 

 

9

32

39

 

 

 

LABEL

23

 

 

 

 

 

 

 

 

 

 

7

 

 

(RZ Type)

(RZ)

 

 

 

 

CR

K1

 

 

 

A1

 

 

A2

 

K2

 

 

 

SR

K1

 

 

 

 

 

 

 

 

G1

(EZ)

 

 

 

 

CR

 

 

 

 

A1

K1

K2

 

A2

 

SR

K1

 

 

 

 

 

 

 

 

 

 

 

G1

(GZ)

 

 

 

 

CR

K1

K2

 

 

A1

 

A2

 

 

 

 

 

 

SR

K1

 

 

 

 

 

 

 

 

G1

(Bold line is connective bar.)

Feb.1999

MITSUBISHI THYRISTOR MODULES

TM130RZ/EZ/GZ-M,-H

MEDIUM POWER GENERAL USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Voltage class

 

Unit

M

 

H

 

 

 

 

VRRM

Repetitive peak reverse voltage

400

 

800

V

 

 

 

 

 

 

VRSM

Non-repetitive peak reverse voltage

480

 

960

V

 

 

 

 

 

 

VR (DC)

DC reverse voltage

320

 

640

V

 

 

 

 

 

 

VDRM

Repetitive peak off-state voltage

400

 

800

V

 

 

 

 

 

 

VDSM

Non-repetitive peak off-state voltage

480

 

960

V

 

 

 

 

 

 

VD (DC)

DC off-state voltage

320

 

640

V

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Conditions

Ratings

Unit

 

 

 

 

 

 

IT (RMS), IF (RMS)

RMS current

 

 

205

A

 

 

 

 

 

 

IT (AV), IF (AV)

Average current

Single-phase, half-wave 180° conduction, TC=85°C

130

A

 

 

 

 

 

 

ITSM, IFSM

Surge (non-repetitive) current

One half cycle at 60Hz, peak value

2600

A

 

 

 

 

 

 

I2t

I2t for fusing

Value for one cycle of surge current

2.8 × 104

A2s

di/dt

Critical rate of rise of on-state current

VD=1/2VDRM, IG=1.0A, Tj=125°C

100

A/μs

 

 

 

 

 

 

PGM

Peak gate power dissipation

 

 

10

W

 

 

 

 

 

 

PG (AV)

Average gate power dissipation

 

 

3.0

W

 

 

 

 

 

 

VFGM

Peak gate forward voltage

 

 

10

V

 

 

 

 

 

 

VRGM

Peak gate reverse voltage

 

 

5.0

V

 

 

 

 

 

 

IFGM

Peak gate forward current

 

 

4.0

A

 

 

 

 

 

 

Tj

Junction temperature

 

 

–40~125

°C

 

 

 

 

 

 

Tstg

Storage temperature

 

 

–40~125

°C

 

 

 

 

 

Viso

Isolation voltage

Charged part to case

2500

V

 

 

 

 

 

 

 

 

Main terminal screw M8

8.83~10.8

N·m

 

 

 

 

Mounting torque

90~110

kg·cm

 

 

 

 

 

 

Mounting screw M6

1.96~3.92

N·m

 

 

 

 

 

 

 

 

20~40

kg·cm

 

 

 

 

 

 

 

 

 

Weight

Typical value

300

g

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

 

Limits

 

Unit

 

 

 

Min.

Typ.

Max.

 

 

 

 

 

 

 

 

 

 

 

IRRM

Repetitive peak reverse current

Tj=125°C, VRRM applied

30

mA

IDRM

Repetitive peak off-state current

Tj=125°C, VDRM applied

30

mA

VTM, VFM

Forward voltage

Tj=125°C, ITM=IFM=390A, instantaneous meas.

1.3

V

dv/dt

Critical rate of rise of off-state voltage

Tj=125°C, VD=2/3VDRM

500

V/μs

VGT

Gate trigger voltage

Tj=25°C, VD=6V, RL=2Ω

3.0

V

VGD

Gate non-trigger voltage

Tj=125°C, VD=1/2VDRM

0.25

V

IGT

Gate trigger current

Tj=25°C, VD=6V, RL=2Ω

15

100

mA

Rth (j-c)

Thermal resistance

Junction to case (per 1/2 module)

0.22

°C/W

Rth (c-f)

Contact thermal resistance

Case to fin, conductive grease applied (per 1/2 module)

0.1

°C/W

Insulation resistance

Measured with a 500V megohmmeter between main terminal

10

MΩ

and case

 

 

 

 

 

 

 

 

 

 

 

 

 

Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.

Feb.1999

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