Mitsubishi TM130DZ-M, TM130DZ-H, TM130PZ-H, TM130PZ-M, TM130CZ-M Datasheet

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Mitsubishi TM130DZ-M, TM130DZ-H, TM130PZ-H, TM130PZ-M, TM130CZ-M Datasheet

MITSUBISHI THYRISTOR MODULES

TM130DZ/CZ/PZ-M,-H

HIGH POWER GENERAL USE

INSULATED TYPE

TM130DZ/CZ/PZ-M,-H

IT (AV)

Average on-state current ..........

130A

VRRM

Repetitive peak reverse voltage

 

........ 400/800V

VDRM Repetitive peak off-state voltage

........ 400/800V

DOUBLE ARMS

Insulated Type

UL Recognized

Yellow Card No. E80276 (N) File No. E80271

(DZ Type)

APPLICATION

DC motor control, NC equipment, AC motor control, Contactless switches,

Electric furnace temperature control, Light dimmers

OUTLINE DRAWING & CIRCUIT DIAGRAM

 

 

 

 

 

Dimensions in mm

3–φ6.5

 

 

 

 

 

(DZ)

 

 

 

 

4–M8

 

 

 

 

 

 

 

 

 

K2

A1

K1

K2

A2

 

 

CR1

 

 

 

 

 

K1

 

 

G2

 

 

 

K2

 

 

 

 

 

 

 

G2

 

 

A1

 

K2

 

A2

 

 

 

40

 

 

 

 

CR2

K1

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

G1

 

 

 

 

 

 

 

 

 

 

 

 

 

K1

 

 

 

 

 

 

 

 

 

 

G1

 

 

 

 

 

 

 

6

16

18

16

 

 

 

 

 

 

 

18

 

 

(CZ)

 

 

 

K2

30

 

32

30

 

 

 

 

 

 

 

 

CR1

 

 

 

G2

 

 

 

 

 

 

 

 

 

68.5

 

 

68.5

 

 

 

 

 

 

 

 

 

 

A1

 

 

 

A2

 

 

 

 

 

 

K1 K2

 

 

 

150

 

 

 

 

CR2

K1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

G1

 

 

 

Tab#110,

 

 

 

 

 

 

 

 

 

t=0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

(PZ)

 

 

 

 

 

 

 

9

 

 

CR1

 

 

K2

 

 

 

 

 

39

K2

 

G2

 

 

LABEL

23

32

A1

K1

 

A2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CR2

K1

 

 

 

7

 

 

 

 

 

 

G1

 

(DZ Type)

 

 

 

(Bold line is connective bar.)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Feb.1999

MITSUBISHI THYRISTOR MODULES

TM130DZ/CZ/PZ-M,-H

HIGH POWER GENERAL USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Voltage class

 

Unit

M

 

H

 

 

 

 

VRRM

Repetitive peak reverse voltage

400

 

800

V

 

 

 

 

 

 

VRSM

Non-repetitive peak reverse voltage

480

 

960

V

 

 

 

 

 

 

VR (DC)

DC reverse voltage

320

 

640

V

 

 

 

 

 

 

VDRM

Repetitive peak off-state voltage

400

 

800

V

 

 

 

 

 

 

VDSM

Non-repetitive peak off-state voltage

480

 

960

V

 

 

 

 

 

 

VD (DC)

DC off-state voltage

320

 

640

V

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Conditions

Ratings

Unit

 

 

 

 

 

 

IT (RMS)

RMS on-state current

 

 

205

A

 

 

 

 

 

 

IT (AV)

Average on-state current

Single-phase, half-wave 180° conduction, TC=85°C

130

A

 

 

 

 

 

 

ITSM

Surge (non-repetitive) on-state current

One half cycle at 60Hz, peak value

2600

A

 

 

 

 

 

 

I2t

I2t for fusing

Value for one cycle of surge current

2.8 × 104

A2s

di/dt

Critical rate of rise of on-state current

VD=1/2VDRM, IG=1.0A, Tj=125°C

100

A/μs

 

 

 

 

 

 

PGM

Peak gate power dissipation

 

 

10

W

 

 

 

 

 

 

PG (AV)

Average gate power dissipation

 

 

3.0

W

 

 

 

 

 

 

VFGM

Peak gate forward voltage

 

 

10

V

 

 

 

 

 

 

VRGM

Peak gate reverse voltage

 

 

5.0

V

 

 

 

 

 

 

IFGM

Peak gate forward current

 

 

4.0

A

 

 

 

 

 

 

Tj

Junction temperature

 

 

–40~+125

°C

 

 

 

 

 

 

Tstg

Storage temperature

 

 

–40~+125

°C

 

 

 

 

 

Viso

Isolation voltage

Charged part to case

2500

V

 

 

 

 

 

 

 

 

Main terminal screw M8

8.83~10.8

N·m

 

 

 

 

Mounting torque

90~110

kg·cm

 

 

 

 

 

 

Mounting screw M6

1.96~3.92

N·m

 

 

 

 

 

 

 

 

20~40

kg·cm

 

 

 

 

 

 

 

 

 

Weight

Typical value

300

g

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

 

Limits

 

Unit

 

 

 

Min.

Typ.

Max.

 

 

 

 

 

 

 

 

 

 

 

IRRM

Repetitive peak reverse current

Tj=125°C, VRRM applied

30

mA

IDRM

Repetitive peak off-state current

Tj=125°C, VDRM applied

30

mA

VTM

On-state voltage

Tj=125°C, ITM=390A, instantaneous meas.

1.3

V

dv/dt

Critical rate of rise of off-state voltage

Tj=125°C, VD=2/3VDRM

500

V/μs

VGT

Gate trigger voltage

Tj=25°C, VD=6V, RL=2Ω

3.0

V

VGD

Gate non-trigger voltage

Tj=125°C, VD=1/2VDRM

0.25

V

IGT

Gate trigger current

Tj=25°C, VD=6V, RL=2Ω

15

100

mA

Rth (j-c)

Thermal resistance

Junction to case (per 1/2 module)

0.22

°C/W

Rth (c-f)

Contact thermal resistance

Case to fin, conductive grease applied (per 1/2 module)

0.1

°C/W

Insulation resistance

Measured with a 500V megohmmeter between main terminal

10

MΩ

and case

 

 

 

 

 

 

 

 

 

 

 

 

 

Feb.1999

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