MITSUBISHI SEMICONDUCTOR GaAs FET
FA01219A
GaAs FET HYBRID IC
DESCRIPTION
FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio.
FEATURES
• Low voltage |
3.5V |
• High gain |
22.5B |
• High efficiency |
50% |
• High power |
30.5dBm |
APPLICATION
PDC0.8GHz
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Unit:mm |
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GND |
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1 |
8 |
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2 |
7 |
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3 |
6 |
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4 |
5 |
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GND |
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10.0 |
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0.8 |
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2.0 |
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6.0 |
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1 |
RF INPUT |
5 |
RF OUTPUT |
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2 |
VD1 |
6 |
GND |
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3 |
GND |
7 |
GND |
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4 |
VD2 |
8 |
VG1,2 |
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tolerance:±0.2 |
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ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Condition |
Tc |
Ratings |
Unit |
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VD |
Drain voltage |
Po≤30.5dBm |
25˚C |
4.5 |
V |
Pin |
Input power |
ZG=ZL=50Ω |
25˚C |
15 |
dBm |
TC(op) |
Operation case temperature |
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– |
-20 to +85 |
˚C |
Tstg |
Storage temperature |
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– |
-30 to +90 |
˚C |
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
ELECTRICAL CHARACTERISTICS(Ta=25˚C)
Symbol |
Parameter |
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Test conditions |
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Limits |
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Unit |
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Min |
Typ |
Max |
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f |
Frequency |
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925 |
– |
958 |
MHz |
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Pin |
Input power |
Po=30.5dBm |
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– |
5 |
8 |
dBm |
IDt |
Total drain current |
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– |
640 |
720 |
mA |
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VD1=VD2=3.5V |
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ρin |
Return loss |
VG1,2=-2.5V |
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– |
– |
-6 |
dB |
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ZG=ZL=50Ω |
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ACP50 |
±50kHz adjacent channel power |
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– |
– |
-47 |
dBc |
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(π/4DQPSK) |
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ACP100 |
±100kHz adjacent channel power |
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– |
– |
-62 |
dBc |
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2fo |
2nd harmonics |
Ditto |
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– |
– |
-30 |
dBc |
3fo |
3rd harmonics |
(CW) |
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– |
– |
-30 |
dBc |
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01219A
GaAs FET HYBRID IC
TYPICAL CHARACTERISTICS 1
VD1=3.5V,VD2=3.5V,VG=-2.5V
Frequency |
Pin |
Po |
Id1 |
Id2 |
Idt |
Ig1,2 |
-50k |
+50k |
-100k |
+100k |
2SP |
3SP |
RL |
(MHz) |
(dBm) |
(dBm) |
(mA) |
(mA) |
(mA) |
(mA) |
(dBc) |
(dBc) |
(dBc) |
(dBc) |
(dBc) |
(dBc) |
(dB) |
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925.0 |
5.78 |
30.5 |
93 |
552 |
644 |
-1.86 |
-49.9 |
-49.2 |
-62.5 |
-62.6 |
-37.5 |
-49.2 |
-10.7 |
941.5 |
6.05 |
30.5 |
90 |
547 |
637 |
-1.86 |
-51.7 |
-51.2 |
-63.6 |
-64.1 |
-37.4 |
-49.7 |
-9.4 |
958.0 |
6.52 |
30.5 |
91 |
543 |
634 |
-1.86 |
-51.6 |
-51.6 |
-64.4 |
-64.6 |
-37.2 |
-50.2 |
-8.5 |
PO,ACP vs Pin CHARACTERISTICS
35 |
f=925MHz |
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-30 |
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VD1=3.5V |
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30 |
VD2=3.5V |
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-40 |
VG=-2.5V |
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PO |
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25 |
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ACP+50k |
-50 |
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ACP-50k |
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20 |
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ACP+100k |
-60 |
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15 |
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ACP-100k |
-70 |
10 |
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0.0 |
5.0 |
-80 |
-5.0 |
10.0 |
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Pin(dBm) |
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PO,IDs vs Pin CHARACTERSTICS
35 |
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1000 |
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900 |
30 |
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PO |
800 |
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700 |
25 |
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IDt |
600 |
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500 |
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ID2 |
20 |
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400 |
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300 |
15 |
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200 |
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ID1 |
100 |
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10 |
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0 |
-5 |
0 |
5 |
10 |
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Pin(dBm) |
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Nov. ´97