MITSMI MM1081XV, MM1027NV, MM1027XD, MM1027XF, MM1027XV Datasheet

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MITSUMI

System Reset (with battery back-up) MM1027, 1081

System Reset (with battery back-up)

Monolithic IC MM1027, 1081

Outline

These ICs were developed for STATIC-RAM (S-RAM) battery back-up, and have built-in switching circuit for main power supply and battery, back-up timing circuit and battery checker. Power ON/OFF and momentary power interruptions can damage S-RAM data on equipment that contains an S-RAM. These ICs switch the S-RAM to back-up mode (CS signal makes S-RAM CE pin low and CE when power supply voltage goes below a set voltage (detection voltage 4.2V typ., variable), preventing damage to data. Further, when power supply voltage drops, these ICs switch from main power supply to battery back-up (switching voltage 3.3V typ.). Then, when power supply voltage rises, they first switch the SRAM from battery back-up state to main power supply (switching voltage 3.3V typ.), and from back-up mode to normal mode (CS signal makes S-RAM CE pin high and CE

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pin low). These signal processes provide reliable protection against data damage. The CS signal also can absorb power supply chattering and roughness through the external capacitor. There is a built-in battery checker to monitor the back-up battery voltage, and this circuit is turned ON/OFF by the control pin.

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pin high)

Features

1. Battery back-up

1. Low IC current consumption (loss current) 0.3µA typ.

2. Drop voltage inside IC (input/output voltage difference) I

3. Reverse current (reverse leak current) 0.1µA max.

2. Normal operation

MM1027

Drop voltage inside IC (input/output voltage difference) I Output voltage V

CC=5V IO=10mA 4.8V typ.

Current consumption D.CONT OPEN 3.0mA max. External transistor drive current 25mA typ.

MM1081

Drop voltage inside IC (input/output voltage difference) I Output voltage V

CC=5V IO=120mA 4.75V typ.

Current consumption 350µA max. External transistor drive current (for output current increase) 25mA typ. TC source current 3.0µA typ.

3. Battery-Vcc switching voltage 3.3V typ.

4. Detection voltage (CS, CS

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) variable 4.2V typ.

5. Battery checker 1 X type 2.70V typ.

N type 2.50V typ.

6. Battery checker 2 X type 2.55V typ.

N type 2.35V typ.

O=10µA 0.2V typ.

O=70mA 0.2V typ.

O=120mA 0.25V typ.

Package

TSOP-20A (MM1027XV, MM1027NV, MM1081XV) SOP-16A (MM1027XF, MM1027NF) DIP-16A (MM1027XD)

MITSUMI

SOP-16A/DIP-16A

13 762458

16 13 1115 14 12910

TSOP-20A

13 6824579

20 16 1319 17 15 14 1218 11

System Reset (with battery back-up) MM1027, 1081

Applications

1. IC memory cards (RAM cards)

2. PCs, word processors

3. Fax machines, photocopiers, other office equipment

4. Other equipment with S-RAMs (equipment requiring back-up)

Pin Assignment

Pin no.

Function

TSOP-20A SOP-16A DIP-16A

1 GND GND GND 2 ADJ. NC NC 3 NC ADJ. ADJ. 4 TC TC T

5 NC CS CS 6 CS NC NC 7 NC CS

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8 CS

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DET.CONT DET.CONT

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9 NC Bat.DET1 Bat.DET1 10 DET.CONT NC NC 11 Bat.DET1 Bat.DET2 Bat.DET2 12 NC Battery Battery 13 Bat.DET2 V

OUT VOUT

14 NC External drive External drive 15 Battery NC NC 16 NC V

CC VCC

17 VOUT 18 NC 19 External drive 20 V

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Block Diagram

System Reset (with battery back-up) MM1027, 1081

Absolute Maximum Ratings

Item Symbol Rating Units

Storage temperature T

Operating temperature T

Power supply voltage V

Operating voltage V

Allowable loss Pd 300 mW

Output current

Output current I

Note : IO1 expresses VCC output current value, and IO2 expresses VBATT output current value.

Electrical Characteristics

Item Symbol Measurement conditions Min. Typ. Max. Units

Consumption MM1027 current 1

All

circuits

Consumption current 2

MM1027 I MM1081 I

(Except where noted otherwise, Ta=25°C, VCC=5V, V

MM1081 V

MM1027 I

(Ta=25°C)

STG

OPR

CC max. 7 V

CCOP 7V

O190mA O1 120 mA O2 200 µA

CC=5V, VBAT=3V, IO=0mA

CC1 D.CONT pin : OPEN

CC=5V, VBAT=3V, IO=0mA 150 210 350 µA

CC2

CC=5V, VBAT=3V, IO=0mA

40~+125

20~+70

D.CONT pin : GND

BAT

=3V)

0.9 1.7 3.0 mA

1.2 2.2 3.5 mA

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CS•CS

circuit

unit

CS, CS detection voltage 1 V CS, CS hysteresis voltage 1 Detection voltage temperature characteristic

MM1027 MM1081

S/ T

CS, CS detection voltage 2

CS, CS hysteresis voltage 2 CS output voltage L V CS output voltage H V CS source current I

S1VCC=H L, VBAT=3V, ADJ pin : OPEN 4.05 4.20 4.35 V

VS1VCC=L H 0.05 0.10 0.20 V

±0.08

%/°C

±0.06

VS2

CC=H L, VBAT=3V

ADJ pin : 12kΩ PULL UP (to V

CC)

3.25 3.50 3.75 V

VS2VCC=L H 0.05 0.10 0.20 V

CSL VCC=3V, ICS=3µA 0.05 0.10 V CSH VCC=5V, ICS=

CSH VCC=5V, VCS=4.6V current measured 8 15 µA

3µA 4.85 4.95 V

MITSUMI

System Reset (with battery back-up) MM1027, 1081

Electrical Characteristics

Item Symbol Measurement conditions Min. Typ. Max. Units

CS sync current I

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output voltage L VCC=5V, ICS=3µA

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output voltage H VCC=4V, VOUT-VCSH, ICS=-3µA

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•

CS circuit unit

circuit

unit

sync current VCC=5V, VCS=0.4V Current measured 0.3 1.0

Operation limit voltage L V

ON delay time 1 t OFF delay time 1 t ON delay time 2 t OFF delay time 2 t BATT detection voltage 1

MM1027X MM1081N

BATT hysteresis voltage 1

BATT

detection voltage 2

MM1027X MM1081N

BATT hysteresis voltage 2

BD output voltage L VBDL V

(Except where noted otherwise, Ta=25°C, VCC=5V, V

CSL VCC=3.5, VCS=0.4V Current measured 0.5 2.0

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VCSL

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VCSH

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ICSL

Minimum power supply voltage at which

OPL

CS pin can hold low level V

PLH1VCC=L H, TC : OPEN, C1=47pF PHL1VCC=H L, TC : OPEN, C1=47pF PLH2VCC=L H, TC : 1nF, C1=47pF PHL2VCC=H L, TC : 1nF, C1=47pF

CC=5V, R1=10kΩ PULL UP

0.4V

VBD1

VBAT=H L (to VCC)

CC=5V, R1=10kΩ PULL UP

VBD1

BAT=L H(to VCC)

CC=5V, R2=10kΩ PULL UP

VBD2

VBAT=H L (to VCC)

CC=5V, R2=10kΩ PULL UP

VBD2

BAT=L H (to VCC)

CC=5V, VBAT=0V

BAT

=3V)

0.10 0.25 V

0.14 0.40 V

2.0 2.4 V

µS

2.0 5 µS

0.8

2.0 10 µS

2.60 2.70 2.80 V

0.05 0.10 0.20 V

2.45 2.55 2.65 V

0.05 0.10 0.20 V

0.2 0.4 V

Backup

circuit

unit

BD output sink current Leakage current IBDH V

IBDSNK

VCC=5V, VBAT=0V, VBD=4V 1.0 3.0

CC=5V, VBAT=3V, VBD=5V

I/O voltage MM1027

SAT1

difference 1 MM1081 V I/O voltage difference 2 V I/O voltage difference 3 V External transistor driving current Power supply switching voltage Hysteresis voltage V Switching voltage temperature characteristic

MM1027 MM1081 ±0.06

SAT2VBAT=3V, IO=10µA SAT3VBAT=3V, IO=100µA

IBUD VCC=5V, V (TB) =4.5V 16 25

VBB VCC=H L, VBAT=3V 3.15 3.30 3.45 V

BB VCC=L H, VBAT=3V 0.05 0.10 0.20 V

BB/ T

VCC=0V, VBAT=3V, IO=0µA

Loss current I

LOS

D.CONT pin : GND

VCC=0V, VBAT=3V, IO=0µA

Reverse current I

OREV

D.CONT pin : OPEN

TC source current I

TCSCE VCC=5V, VTC=0V 2.0 3.0 5.0 µA

CC=5V, IO=70mA

CC=5V, IO=120mA

0.2 0.3

0.25 0.4

0.2 0.3 V

0.3 0.4 V

0.2 µA

±0.08

0.3 µA

0.1 µA

%/°C

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