Microsemi Corporation KV1951A, KV1931A, KV1921A, KV1911A, KV1991A Datasheet

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UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION
VARACTOR DIODES
DESCRIPTION
The KV 1900 series of super hyperabrupt varactor di-
odes combines low voltage with high ratio tuning. They
feature grown junction mesa technology for the highest
Q commercially available. Passivation is our dense mil
spec silicon dioxide for the lowest 1/F noise and low
leakage even at temperature extremes. They are avail-
able in a wide range of package styles including chip
(style 00) and most other conventional ceramic micro-
wave packages. When ordering, specify the desired
case style by adding its number as a suffix to the basic
Hyperabrupt Varactors see the Surface Mount Devices
section.
APPLICATIONS
Low voltage / battery powered equipment from UHF
through Ku band including:
Wide bandwidth VCO’s
Voltage Tunable Filters
Phase Shifters
Modulators
VCXO’s
RATINGS:
Minimum Voltage Breakdown: 12V@10µA
Maximum Leakage Current: 50 nA @ 10V/25°C
Junction Operating Temp.: -55°C to +125°C
Storage Temp.: -65°C to +200°C
ELECTRICAL SPECIFICATIONS: T
A
=25°C
MODEL
C
J
@ 1 V (pF) C
J
@ 2.5 V (pF) C
J
@ 4 V (pF) C
J
@ 8 V (pF)
Q@4V/
50 MHz
KV1911A >36.00 18 - 27 <11.80 <6.00 400
KV1951A >26.00 13 - 20 < 8.80 <4.50 500
KV1921A >17.00 8.3 - 12.8 < 5.80 <3.00 600
KV1931A >13.00 6.3 - 9.8 < 4.30 <2.50 750
KV1941A > 9.00 4.3 - 6.3 < 2.80 <1.50 900
KV1961A > 3.80 1.8 - 2.8 < 1.30 <0.80 1200
KV1971A > 1.65 0.9 - 1.35 < 0.60 <0.35 1400
KV1981A > 1.20 0.6 - 0.9 < 0.45 <0.30 1600
KV1991A > 0.60 0.3 - 0.6 < 0.25 <0.15 1800
SEMICONDUCTOR OPERATION
75 Technology Drive Lowell, MA 01851 Tel: 978-442-5600 Fax: 978-937-3748
39
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