MDE 3KP9.0A, 3KP9.0, 3KP8.5A, 3KP8.5, 3KP8.0A, 3KP8.0, 3KP7.5A, 3KP7.5, 3KP7.0A, 3KP7.0, 3KP6.0A, 3KP6.5A, 3KP6.5, 3KP6.0, 3KP5.0A, 3KP5.0, 3KP33A, 3KP33, 3KP30A, 3KP30, 3KP28A, 3KP28, 3KP26A, 3KP26, 3KP24A, 3KP24, 3KP22A, 3KP22, 3KP20A, 3KP20, 3KP18A, 3KP18, 3KP17A, 3KP17, 3KP16A, 3KP16, 3KP15A, 3KP15, 3KP14A, 3KP14, 3KP13A, 3KP13, 3KP12A, 3KP12, 3KP11A, 3KP11, 3KP10, 3KP10A Datasheet

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: [phone] • Fax: [phone]

3KP SERIES

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-5.0 TO 180 Volts

3000 Watt Peak Pulse Power

FEATURES

•Plastic package has Underwriters Laboratory Flammability Classification 94 V-O

•Glass passivated junction

•3000W Peak Pulse Power

capability on 10/1000 µs waveform

•Glass passivated junction

•Low incremental surge resistance

•Excellent clamping capability

•Repetition rate (duty cycle): 0.05%

•Fast response time: typically less than

1.0ps from 0 volts to BV

•Typical IR less than 1µA above 10V

•High temperature soldering guaranteed: 265°C/10 seconds/ .375", (9.5mm) lead length, 5lbs., (2.3kg) tension

MECHANICAL DATA

Case: Molded plastic over glass passivated junction Terminals: Plated Axial leads, solderable per MIL-STD-750, Method 2026

Polarity: Color band denoted positive end (cathode) except Bipolar

Mounting Position: Any Weight: 0.07 ounces, 2.1 grams

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types 3KP5.0 thru types 3KP180 (e.g. 3KP5.0C, 3KP180CA) Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

	RATING	SYMBOL	VALUE	UNITS
	Peak Pulse Power Dissipation on 10/1000 µs	Pppm	Minimum 3000	Watts
	waveform (NOTE 1, Fig.1)
	Peak Pulse Current of on 10/1000 µs waveform (Note 1,Fig 3)	Ippm	SEE TABLE 1	Amps
	Steady State Power Dissipation at TL = 75°C	Pm(AV)	8.0	Watts
	Lead lengths .375", 9.5mm (Note 2)
	Peak Forward Surge Current, 8.3ms Single Half Sine-wave	IFSM	250	Amps
	Superimposed on Rated Load, (JEDEC Method)(Note 3)
	Operatings and Storage Temperature Range	Tj, Tstg	-55 +175	°C
	NOTES:

1.Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2.Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.

3.8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.

8/6/2002

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: [phone] • Fax: [phone]

RATING AND CHARACTERISTIC CURVES 3KP SERIES

8/6/2002