M C C
omponents 21201 Itasca Street Chatsworth
! "# $% ! "#
Features
∙Oxide-Glass passivated Junction
∙Bi-Directional protection in a single device
∙Surge capabilities up to 80A@10/1000us or 250A@8/20us
∙High Off-State impedance and Low On-State voltage
∙Plastic material has UL flammability classification 94V -0
Mechanical Data
∙ Case : Molded plastic
∙Polarity : None cathode band denotes
∙Approx Weight : 0.093grams
Maximum Rating
Characteristic |
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Symbol |
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Value |
Unit |
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Non-repetitive peak |
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IPP |
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80A |
10/1000us |
impulse current |
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Non-repetitive peak |
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ITSM |
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30A |
8.3ms, one-half |
On-state current |
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cycle |
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Operating temperature |
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TOP |
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-40~150oC |
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range |
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Junction and storage |
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TJ, TSTG |
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-55~150oC |
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temperature range |
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Thermal Resistance
Characteristic |
Symbol |
Value |
Unit |
Thermal Resistance |
RqJL |
20oC/W |
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junction to lead |
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Thermal Resistance |
RqJA |
100oC/W |
On recommended |
junction to ambient |
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pad layout |
Typical positive |
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temperature |
VBR/ TJ |
0.1%/oC |
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coefficient for |
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breakdown voltage |
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TSMBJ0506C
THRU
TSMBJ0524C
Transient Voltage
Protection Device
75 to 320 Volts
DO-214AA (SMBJ)
H
Cathode Band
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E |
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D |
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B |
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F |
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DIMENSIONS |
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INCHES |
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MM |
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DIM |
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MIN |
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MAX |
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MIN |
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MAX |
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NOTE |
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A |
.078 |
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.096 |
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2.00 |
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2.44 |
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B |
.077 |
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.083 |
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1.96 |
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2.10 |
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C |
.002 |
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.008 |
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.05 |
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.20 |
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D |
--- |
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.02 |
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--- |
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.51 |
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E |
.030 |
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.060 |
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.76 |
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1.52 |
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F |
.065 |
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.091 |
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1.65 |
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2.32 |
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G |
.205 |
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.220 |
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5.21 |
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5.59 |
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H |
.160 |
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.180 |
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4.06 |
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4.57 |
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J |
.130 |
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.155 |
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3.30 |
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3.94 |
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SUGGESTED SOLDER
PAD LAYOUT
0.090"
0.085”
0.070”
www.mccsemi.com
TSMBJ0506C thru TSMBJ0524C M C C
ELECTRICAL CHARACTERISTIC @25 Unless otherwise specified
|
Rated |
Off-state |
Breakover |
On-State |
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Off-State |
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Parameter |
Repetitive Off- |
Leakage |
Voltage |
Breakover Current |
Holding Current |
|||||
Voltage |
Capacitance |
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state Voltage |
Curr ent@VDRM |
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@IT=1.0A |
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Symbol |
VDRM |
IDRM |
VBO |
VT |
IBO- |
IBO+ |
IH- |
IH+ |
CJ |
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Units |
Volts |
uA |
Volts |
Volts |
mA |
mA |
mA |
mA |
pF |
|
Limit |
Max |
Max |
Max |
Max |
Min |
Max |
Min |
Max |
Typ. |
|
TSMBJ0506C |
75 |
5 |
98 |
5 |
50 |
800 |
150 |
800 |
140 |
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TSMBJ0507C |
90 |
5 |
130 |
5 |
50 |
800 |
150 |
800 |
90 |
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TSMBJ0510C |
140 |
5 |
180 |
5 |
50 |
800 |
150 |
800 |
90 |
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TSMBJ0512C |
160 |
5 |
220 |
5 |
50 |
800 |
150 |
800 |
90 |
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TSMBJ0516C |
190 |
5 |
265 |
5 |
50 |
800 |
150 |
800 |
60 |
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TSMBJ0518C |
220 |
5 |
300 |
5 |
50 |
800 |
150 |
800 |
60 |
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TSMBJ0522C |
275 |
5 |
350 |
5 |
50 |
800 |
150 |
800 |
60 |
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TSMBJ0524C |
320 |
5 |
400 |
5 |
50 |
800 |
150 |
800 |
60 |
MAXIMUM RATED SURGE WAVEFORM
Waveform |
Standard |
Ipp (A) |
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2/10 us |
GR-1089-CORE |
250 |
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8/20 us |
IEC 61000-4-5 |
250 |
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10/160 us |
FCC Part 68 |
150 |
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10/700 us |
ITU-T K20/21 |
100 |
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10/560 us |
FCC Part 68 |
100 |
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10/1000 us |
GR-1089-CORE |
80 |
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Symbol |
Parameter |
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VDRM |
Stand-off voltage |
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IDRM |
Leakage current at stand-off voltage |
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VBR |
Breakdown voltage |
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IBR |
Breakdown current |
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VBO |
Breakover voltage |
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IBO |
Breakover current |
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IH |
Holding current |
NOTE: 1 |
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VT |
On state voltage |
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IPP |
Peak pulse current |
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CO |
Off-state capacitance |
NOTE: 2 |
(%) |
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CURRENT |
100 |
Peak value(Ipp) |
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tr = rise time to peak value |
PULSEPEAK;Ipp |
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tp = decay time to half value |
50 |
Half value |
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0 |
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tr |
tp |
TIME |
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I |
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IPP |
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IBO |
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IH |
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IBR |
IDRM |
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V |
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VBR |
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VT |
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VDRM |
VBO |
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NOTE
1.I H > ( V L/ R L) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time. It does not exceed 30ms.
2.Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.
www.mccsemi.com