MCC TSMBJ0324C, TSMBJ0322C, TSMBJ0318C, TSMBJ0312C, TSMBJ0316C Datasheet

M C C

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TSMBJ0306C

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TSMBJ0324C

Features

∙Oxide-Glass passivated Junction

∙Bi-Directional protection in a single device

∙Surge capabilities up to 50A@10/1000us or 150A@8/20us

∙High Off-State impedance and Low On-State voltage

∙Plastic material has UL flammability classification 94V -0

Mechanical Data

∙ Case : Molded plastic

∙Polarity : None cathode band denotes

∙Approx Weight : 0.093grams

Maximum Rating

Characteristic		Symbol		Value	Unit
Non-repetitive peak		IPP		50A	10/1000us
impulse current
Non-repetitive peak		ITSM		20A	8.3ms, one-half
On-state current					cycle
Operating temperature		TOP		-40~125oC
range
Junction and storage		TJ, TSTG		-55~150oC
temperature range

Thermal Resistance

Characteristic	Symbol	Value	Unit
Thermal Resistance	RqJL	30oC/W
junction to lead
Thermal Resistance	RqJA	120oC/W	On recommended
junction to ambient			pad layout
Typical positive
temperature	VBR/ TJ	0.1%/oC
coefficient for
breakdown voltage

Transient Voltage

Protection Device

75 to 320 Volts

DO-214AA (SMBJ)

H

Cathode Band

J

																			A																					C
											E									D											B
								F
								G
																DIMENSIONS
								INCHES												MM
		DIM						MIN					MAX						MIN						MAX									NOTE
			A				.078				.096								2.00						2.44
			B				.077				.083								1.96						2.10
			C				.002				.008								.05						.20
			D				---				.02								---						.51
			E				.030				.060								.76						1.52
			F				.065				.091								1.65						2.32
			G				.205				.220								5.21						5.59
			H				.160				.180								4.06						4.57
			J				.130				.155								3.30						3.94

SUGGESTED SOLDER

PAD LAYOUT

0.090"

0.085”

0.070”

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TSMBJ0306C thru TSMBJ0324C M C C

ELECTRICAL CHARACTERISTIC @25 Unless otherwise specified

		Rated	Off-state	Breakover	On-State					Off-State
	Parameter	Repetitive Off-	Leakage		Voltage	Breakover Current		Holding Current
				Voltage						Capacitance
		state Voltage	Current@VDRM		@IT =1.0A
	Symbol	VDRM	IDRM	VBO	VT	IBO-	IBO+	IH-	IH+	CJ
	Units	Volts	uA	Volts	Volts	mA	mA	mA	mA	pF
	Limit	Max	Max	Max	Max	Min	Max	Min	Max	Typ.
	TSMBJ0306C	75	5	98	5	50	800	150	800	100
	TSMBJ0307C	90	5	130	5	50	800	150	800	60
	TSMBJ0310C	140	5	180	5	50	800	150	800	60
	TSMBJ0312C	160	5	220	5	50	800	150	800	60
	TSMBJ0316C	190	5	265	5	50	800	150	800	40
	TSMBJ0318C	220	5	300	5	50	800	150	800	40
	TSMBJ0322C	275	5	350	5	50	800	150	800	40
	TSMBJ0324C	320	5	400	5	50	800	150	800	40

MAXIMUM RATED SURGE WAVEFORM

Waveform	Standard	Ipp (A)
2/10 us	GR-1089-CORE	200
8/20 us	IEC 61000-4-5	150
10/160 us	FCC Part 68	100
10/700 us	ITU-T K20/21	60
10/560 us	FCC Part 68	60
10/1000 us	GR-1089-CORE	50

Symbol	Parameter
VDRM	Stand-off voltage
IDRM	Leakage current at stand-off voltage
VBR	Breakdown voltage
IBR	Breakdown current
VBO	Breakover voltage
IBO	Breakover current
IH	Holding current	NOTE: 1
VT	On state voltage
IPP	Peak pulse current
CO	Off-state capacitance	NOTE: 2

(%)
CURRENT	100	Peak value(Ipp)
		tr = rise time to peak value
PULSEPEAK;Ipp		tp = decay time to half value
	50	Half value
	0

tr	tp	TIME
		I
		IPP
		IBO
		IH
	IBR	IDRM
				V
			VBR
		VT
			VDRM	VBO

NOTE

1.I H > ( V L/ R L) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time. It does not exceed 30ms.

2.Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.

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