LRC BAS40LT1 Datasheet
Schottky Barrier Diode
LESHAN RADIO COMPANY, LTD.
BAS40LT1
These Schottky barrier diodes are designed
for high speed switching applications, circuit
protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount package is excellent for
hand held and portable applications where
space is limited.
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Reverse V oltage V
Forward Power Dissipation P
@ TA = 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Operating Junction and Storage
Temperature Range
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V
Total Capacitance (VR = 1.0 V , f = 1.0 MHz) C
Reverse Leakage (VR = 25 V) I
Forward Voltage (IF = 0.1 mAdc) V
Forward Voltage (IF = 30 mAdc) V
Forward Voltage (IF = 100 mAdc) V
= 150°C unless otherwise noted)
J
R
F
TJ, T
stg
= 25°C unless otherwise noted)
A
40 Volts
–55 to +150 °C
(BR)R
T
R
F
F
F
1
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
40V SCHOTTKY BARRIER DIODES
*
ANODE
1
40 — Volts
— 5.0 pF
— 1.0 µAdc
— 380 mVdc
— 500 mVdc
— 1.0 Vdc
3
CATHODE
3
BAS40LT1–1/2
LESHAN RADIO COMPANY, LTD.
BAS40LT1
100
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
Figure 1. Typical Forward Current
3.5
3.0
2.5
100
10
1.0
0.1
, REVERSE CURRENT (µ A)
R
I
0.01
0.001
0 5.0 10 15 20 25
VR, REVERSE VOLTAGE (V)
Figure 2. Reverse Current Versus Reverse Voltage
2.0
1.5
1.0
, CAPACITANCE (pF)
T
0.5
C
0
0 5.0 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Current
BAS40LT1–2/2
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