IS62VV51216LL |
ISSI® |
512K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
PRELIMINARY INFORMATION
DECEMBER 2000
FEATURES
•High-speed access time: 70, 85 ns
•CMOS low power operation
–36 mW (typical) operating
–9 µW (typical) CMOS standby
•TTL compatible interface levels
•Single 1.65V-1.95V VCC power supply
•Fully static operation: no clock or refresh required
•Three state outputs
•Data control for upper and lower bytes
•Industrial temperature available
•Available in 48-pin mini BGA (7.2mm x 8.7mm)
DESCRIPTION
The ISSI IS62VV51216LL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
For the IS62VV51216LL, when CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62VV51216LL is packaged in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A18 |
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DECODER |
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512K x 16 |
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MEMORY ARRAY |
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VCC |
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GND |
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I/O0-I/O7 |
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I/O |
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Lower Byte |
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COLUMN I/O |
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DATA |
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I/O8-I/O15 |
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CIRCUIT |
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Upper Byte |
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CS2 |
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CS1 |
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CONTROL |
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OE |
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WE |
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CIRCUIT |
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UB |
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LB |
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This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
1 |
PRELIMINARY INFORMATION Rev. 00B
01/10/01
IS62VV51216LL |
ISSI® |
PIN CONFIGURATIONS
48-Pin mini BGA (7.2mm x 8.7mm)
1 |
2 |
3 |
4 |
5 |
6 |
A |
LB |
OE |
A0 |
A1 |
A2 |
CS2 |
B |
I/O8 |
UB |
A3 |
A4 |
CS1 |
I/O0 |
C |
I/O9 |
I/O10 |
A5 |
A6 |
I/O1 |
I/O2 |
D |
GND |
I/O11 |
A17 |
A7 |
I/O3 |
Vcc |
E |
Vcc |
I/O12 |
VSS |
A16 |
I/O4 |
GND |
F |
I/O14 |
I/O13 |
A14 |
A15 |
I/O5 |
I/O6 |
G |
I/O15 |
NC |
A12 |
A13 |
WE |
I/O7 |
H |
A18 |
A8 |
A9 |
A10 |
A11 |
NC |
PIN DESCRIPTIONS
A0-A18 |
Address Inputs |
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I/O0-I/O15 |
Data Inputs/Outputs |
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CS1, CS2 |
Chip Enable Input |
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OE |
Output Enable Input |
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WE |
Write Enable Input |
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LB |
Lower-byte Control (I/O0-I/O7) |
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UB |
Upper-byte Control (I/O8-I/O15) |
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NC |
No Connection |
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Vcc |
Power |
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GND |
Ground |
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TRUTH TABLE
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I/O PIN |
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Mode |
WE |
CS1 |
CS2 |
OE |
LB |
UB |
I/O0-I/O7 |
I/O8-I/O15 |
Vcc Current |
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Not Selected |
X |
H |
X |
X |
X |
X |
High-Z |
High-Z |
ISB1, ISB2 |
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X |
X |
L |
X |
X |
X |
High-Z |
High-Z |
ISB1, ISB2 |
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X |
X |
X |
X |
H |
H |
High-Z |
High-Z |
ISB1, ISB2 |
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Output Disabled |
H |
L |
H |
H |
L |
X |
High-Z |
High-Z |
ICC |
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H |
L |
H |
H |
X |
L |
High-Z |
High-Z |
ICC |
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Read |
H |
L |
H |
L |
L |
H |
DOUT |
High-Z |
ICC |
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H |
L |
H |
L |
H |
L |
High-Z |
DOUT |
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H |
L |
H |
L |
L |
L |
DOUT |
DOUT |
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Write |
L |
L |
H |
X |
L |
H |
DIN |
High-Z |
ICC |
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L |
L |
H |
X |
H |
L |
High-Z |
DIN |
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L |
L |
H |
X |
L |
L |
DIN |
DIN |
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2 Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
01/10/01
IS62VV51216LL |
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ISSI® |
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OPERATING RANGE |
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Range |
Ambient Temperature |
VCC |
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Commercial |
0°C to +70°C |
1.65V - 1.95V |
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Industrial |
–40°C to +85°C |
1.65V - 1.95V |
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ABSOLUTE MAXIMUM RATINGS(1)
Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
–0.2 to Vcc+0.3 |
V |
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TBIAS |
Temperature Under Bias |
–40 to +85 |
°C |
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VCC |
Vcc Related to GND |
–0.2 to +2.6 |
V |
TSTG |
Storage Temperature |
–65 to +150 |
°C |
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PT |
Power Dissipation |
1.0 |
W |
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Note:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Unit |
VOH |
Output HIGH Voltage |
IOH = -0.1 mA |
1.4 |
— |
V |
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VOL |
Output LOW Voltage |
IOL = 0.1 mA |
— |
0.2 |
V |
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VIH |
Input HIGH Voltage |
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1.4 |
VCC + 0.2 |
V |
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VIL(1) |
Input LOW Voltage |
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–0.3 |
0.4 |
V |
ILI |
Input Leakage |
GND ≤ VIN ≤ VCC |
–1 |
1 |
µA |
ILO |
Output Leakage |
GND ≤ VOUT ≤ VCC, Outputs Disabled |
–1 |
1 |
µA |
Notes:
1. VIL (min.) = –1.0V for pulse width less than 10 ns.
CAPACITANCE(1)
Symbol |
Parameter |
Conditions |
Max. |
Unit |
CIN |
Input Capacitance |
VIN = 0V |
8 |
pF |
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COUT |
Input/Output Capacitance |
VOUT = 0V |
10 |
pF |
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Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
3 |
PRELIMINARY INFORMATION Rev. 00B
01/10/01