ISSI IS62VV51216LL-85MI, IS62VV51216LL-70M, IS62VV51216LL-85M, IS62VV51216LL-70MI Datasheet

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IS62VV51216LL

ISSI®

512K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

PRELIMINARY INFORMATION

DECEMBER 2000

FEATURES

High-speed access time: 70, 85 ns

CMOS low power operation

36 mW (typical) operating

9 µW (typical) CMOS standby

TTL compatible interface levels

Single 1.65V-1.95V VCC power supply

Fully static operation: no clock or refresh required

Three state outputs

Data control for upper and lower bytes

Industrial temperature available

Available in 48-pin mini BGA (7.2mm x 8.7mm)

DESCRIPTION

The ISSI IS62VV51216LL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

For the IS62VV51216LL, when CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

The IS62VV51216LL is packaged in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm).

FUNCTIONAL BLOCK DIAGRAM

A0-A18

 

DECODER

 

 

512K x 16

 

 

 

MEMORY ARRAY

 

 

 

 

 

 

 

 

 

 

 

VCC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I/O0-I/O7

 

 

 

 

 

 

 

 

 

I/O

 

 

 

 

 

 

 

 

 

 

 

Lower Byte

 

 

 

COLUMN I/O

 

DATA

 

 

 

 

 

 

 

 

 

 

 

I/O8-I/O15

 

CIRCUIT

 

 

 

 

 

 

 

 

 

 

 

 

Upper Byte

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CS2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CS1

 

 

CONTROL

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WE

 

 

CIRCUIT

 

 

 

 

 

 

 

 

 

 

 

 

UB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

LB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.

Integrated Silicon Solution, Inc. — 1-800-379-4774

1

PRELIMINARY INFORMATION Rev. 00B

01/10/01

ISSI IS62VV51216LL-85MI, IS62VV51216LL-70M, IS62VV51216LL-85M, IS62VV51216LL-70MI Datasheet

IS62VV51216LL

ISSI®

PIN CONFIGURATIONS

48-Pin mini BGA (7.2mm x 8.7mm)

1

2

3

4

5

6

A

LB

OE

A0

A1

A2

CS2

B

I/O8

UB

A3

A4

CS1

I/O0

C

I/O9

I/O10

A5

A6

I/O1

I/O2

D

GND

I/O11

A17

A7

I/O3

Vcc

E

Vcc

I/O12

VSS

A16

I/O4

GND

F

I/O14

I/O13

A14

A15

I/O5

I/O6

G

I/O15

NC

A12

A13

WE

I/O7

H

A18

A8

A9

A10

A11

NC

PIN DESCRIPTIONS

A0-A18

Address Inputs

 

 

I/O0-I/O15

Data Inputs/Outputs

 

 

CS1, CS2

Chip Enable Input

 

 

OE

Output Enable Input

 

 

WE

Write Enable Input

 

 

LB

Lower-byte Control (I/O0-I/O7)

 

 

UB

Upper-byte Control (I/O8-I/O15)

 

 

NC

No Connection

 

 

Vcc

Power

 

 

GND

Ground

 

 

TRUTH TABLE

 

 

 

 

 

 

 

I/O PIN

 

Mode

WE

CS1

CS2

OE

LB

UB

I/O0-I/O7

I/O8-I/O15

Vcc Current

 

 

 

 

 

 

 

 

 

 

Not Selected

X

H

X

X

X

X

High-Z

High-Z

ISB1, ISB2

 

X

X

L

X

X

X

High-Z

High-Z

ISB1, ISB2

 

X

X

X

X

H

H

High-Z

High-Z

ISB1, ISB2

 

 

 

 

 

 

 

 

 

 

Output Disabled

H

L

H

H

L

X

High-Z

High-Z

ICC

 

H

L

H

H

X

L

High-Z

High-Z

ICC

 

 

 

 

 

 

 

 

 

 

Read

H

L

H

L

L

H

DOUT

High-Z

ICC

 

H

L

H

L

H

L

High-Z

DOUT

 

 

H

L

H

L

L

L

DOUT

DOUT

 

 

 

 

 

 

 

 

 

 

 

Write

L

L

H

X

L

H

DIN

High-Z

ICC

 

L

L

H

X

H

L

High-Z

DIN

 

 

L

L

H

X

L

L

DIN

DIN

 

 

 

 

 

 

 

 

 

 

 

2 Integrated Silicon Solution, Inc. — 1-800-379-4774

PRELIMINARY INFORMATION Rev. 00B

01/10/01

IS62VV51216LL

 

ISSI®

OPERATING RANGE

 

 

 

 

 

 

Range

Ambient Temperature

VCC

 

Commercial

0°C to +70°C

1.65V - 1.95V

 

 

 

 

Industrial

–40°C to +85°C

1.65V - 1.95V

 

 

 

 

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.2 to Vcc+0.3

V

 

 

 

 

TBIAS

Temperature Under Bias

–40 to +85

°C

 

 

 

 

VCC

Vcc Related to GND

–0.2 to +2.6

V

TSTG

Storage Temperature

–65 to +150

°C

 

 

 

 

PT

Power Dissipation

1.0

W

 

 

 

 

Note:

1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

IOH = -0.1 mA

1.4

V

 

 

 

 

 

 

VOL

Output LOW Voltage

IOL = 0.1 mA

0.2

V

 

 

 

 

 

 

VIH

Input HIGH Voltage

 

1.4

VCC + 0.2

V

 

 

 

 

 

 

VIL(1)

Input LOW Voltage

 

–0.3

0.4

V

ILI

Input Leakage

GND VIN VCC

–1

1

µA

ILO

Output Leakage

GND VOUT VCC, Outputs Disabled

–1

1

µA

Notes:

1. VIL (min.) = –1.0V for pulse width less than 10 ns.

CAPACITANCE(1)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

8

pF

 

 

 

 

 

COUT

Input/Output Capacitance

VOUT = 0V

10

pF

 

 

 

 

 

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

PRELIMINARY INFORMATION Rev. 00B

01/10/01

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