IS62LV5128LL |
ISSI® |
512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
MAY 2001
FEATURES
•Access times of 70, 85 ns
•CMOS low power operation:
—135 mW (typical) operating
—16.5 µW (typical) standby
•Low data retention voltage: 2V (min.)
DESCRIPTION
The ISSI IS62LV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low voltage, sixtransistor(6T),CMOS technology. The deviceis targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers.
•Output Enable (OE) and Chip Enable (CE) inputs for ease in applications
•TTL compatible inputs and outputs
•Fully static operation:
— No clock or refresh required
•Single2.7V(min)to3.15V(max)VCCpowersupply
•Availablein36-pinminiBGA
FUNCTIONAL BLOCK DIAGRAM
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Additionally, easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS62LV5128LL is available in a 36-pin mini BGA package (8mm x 10mm).
A0-A18 |
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512K x 8 |
DECODER |
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MEMORY ARRAY |
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VCC
GND
I/O
I/O0-I/O7 DATA COLUMN I/O
CIRCUIT
CE
OE CONTROL
CIRCUIT
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
1 |
Rev. D
05/04/01
IS62LV5128LL |
ISSI® |
PIN CONFIGURATION
36-pin mini BGA (B)
1 |
2 |
3 |
4 |
5 |
6 |
A |
A0 |
A1 |
NC |
A3 |
A6 |
A8 |
B |
I/O4 |
A2 |
WE |
A4 |
A7 |
I/O0 |
C |
I/O5 |
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NC |
A5 |
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I/O1 |
D |
GND |
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Vcc |
E |
Vcc |
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GND |
F |
I/O6 |
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A18 |
A17 |
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I/O2 |
G |
I/O7 |
OE |
CE |
A16 |
A15 |
I/O3 |
H |
A9 |
A10 |
A11 |
A12 |
A13 |
A14 |
PIN DESCRIPTIONS
A0-A18 |
Address Inputs |
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CE |
Chip Enable Input |
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OE |
Output Enable Input |
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WE |
Write Enable Input |
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I/O0-I/O7 |
Input/Output |
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NC |
No Connection |
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Vcc |
Power |
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GND |
Ground |
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TRUTH TABLE
Mode |
WE |
CE |
OE |
I/O Operation |
Vcc Current |
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Not Selected |
X |
H |
X |
High-Z |
ISB1, ISB2 |
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Output Disabled |
H |
L |
H |
High-Z |
ICC |
Read |
H |
L |
L |
DOUT |
ICC |
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Write |
L |
L |
X |
DIN |
ICC |
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OPERATING RANGE
Range |
Ambient Temperature |
VCC Min. |
VCC Max. |
Commercial |
0°C to +70°C |
2.7V |
3.15V |
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Industrial |
–40°C to +85°C |
2.7V |
3.15V |
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2 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
05/04/01
IS62LV5128LL |
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ISSI® |
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ABSOLUTE MAXIMUM RATINGS(1) |
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Symbol |
Parameter |
Value |
Unit |
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VTERM |
Terminal Voltage with Respect to GND |
–0.5 to Vcc + 0.3 |
V |
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VCC |
Vcc related to GND |
–0.3 to +3.3 |
V |
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TBIAS |
Temperature Under Bias |
–40 to +85 |
°C |
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TSTG |
Storage Temperature |
–65 to +150 |
°C |
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PT |
Power Dissipation |
1 |
W |
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Note: |
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1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol |
Parameter |
Conditions |
Max. |
Unit |
CIN |
Input Capacitance |
VIN = 0V |
6 |
pF |
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COUT |
Output Capacitance |
VOUT = 0V |
8 |
pF |
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Notes:
1.Tested initially and after any design or process changes that may affect these parameters.
2.Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Unit |
VOH |
Output HIGH Voltage |
VCC = 3.0V, IOH = –1.0 mA |
2.2 |
— |
V |
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VOL |
Output LOW Voltage |
VCC = 3.0V, IOL = 2.1 mA |
— |
0.4 |
V |
VIH |
Input HIGH Voltage |
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2.2 |
VCC + 0.3 |
V |
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VIL |
Input LOW Voltage(1) |
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–0.2 |
0.4 |
V |
ILI |
Input Leakage |
GND ≤ VIN ≤ VCC |
–1 |
1 |
µA |
ILO |
Output Leakage |
GND ≤ VOUT ≤ VCC, OUTPUTS Disabled |
–1 |
1 |
µA |
Note:
1. VIL = –2.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
3 |
Rev. D
05/04/01