ISSI IS62LV2568LL-70BI, IS62LV2568LL-70B, IS62LV2568LL-85T, IS62LV2568LL-85HI, IS62LV2568LL-85H Datasheet

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Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

05/03/00

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

IS62LV2568LL ISSI

DESCRIPTION

The

ISSI

IS62LV2568LL is a low voltage, 262,144 words

by 8 bits, CMOS SRAM. It is fabricated using

ISS

I’s low

voltage, six transistor (6T),

CMOS technology.

The device

targeted

to satisfy the demands of the state-of-the-art

technologies such as cell phones and pagers.

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation

can be reduced

down with CMOS input levels. Additionally, easy memory

expansion is provided by using Chip Enable and Output

Enable inputs, CE and OE. The active LOW Write Enable (WE)

controls both writing and reading of the memory.

The IS62LV2568LL is available in 32-pin TSOP (Type I),

STSOP (Type I), and 36-pin mini BGA.

FUNCTIONAL BLOCK DIAGRAM

256K x 8 LOW POWER and LOW Vcc

CMOS STATIC RAM

FEATURES

• Access times of 70 and 85 ns

• CMOS low power operation:

— 120 mW (typical) operating

— 6 µW (typical) standby

• Low data retention voltage: 2V (min.)

• Output Enable (OE) and two Chip Enable

(CE1 and CE2) inputs for ease in applications

• TTL compatible inputs and outputs

• Fully static operation:

— No clock or refresh required

• Single 2.5V to 3.0V power supply

• Available in 32-pin TSOP (Type I), STSOP (Type I),

and 36-pin mini BGA

APRIL 2000

A0-A17

CE1

256K x 8

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VCC

I/O

DATA

CIRCUIT

I/O0-I/O7

CE2

IS62LV2568LL ISSI

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

05/03/00

PIN DESCRIPTIONS

A0-A17 Address Inputs

CE1 Chip Enable 1 Input

CE2 Chip Enable 2 Input

OE Output Enable Input

WE Write Enable Input

I/O0-I/O7 Input/Output

NC No Connection

Vcc Power

GND Ground

PIN CONFIGURATION

36-pin mini BGA (B)

A11

A13

CE2

A15

VCC

A17

A16

A14

A12

A10

CE1

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

1 2 3 4 5 6

I/O4

I/O5

GND

Vcc

I/O6

I/O7

A10

CE2

CE1

A11

A17

A16

A12

A15

A13

I/O0

I/O1

Vcc

GND

I/O2

I/O3

A14

32-Pin TSOP (Type I), STSOP (Type I)

IS62LV2568LL ISSI

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

05/03/00

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Parameter Value Unit

VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V

VCC Vcc related to GND –0.3 to +4.6 V

TBIAS Temperature Under Bias –40 to +85 °C

TSTG Storage Temperature –65 to +150 °C

PT Power Dissipation 0.7 W

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

CAPACITANCE

(1,2)

Symbol Parameter Conditions Max. Unit

CIN Input Capacitance VIN = 0V 6 pF

COUT Output Capacitance VOUT = 0V 8 pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: T

A = 25°C, f = 1 MHz, Vcc = 3.0V.

TRUTH TABLE

Mode W E CE1 CE2 OE I/O Operation Vcc Current

Not Selected X H X X High-Z ISB1, ISB2

(Power-down) X X L X High-Z ISB1, ISB2

Output Disabled H L H H High-Z ICC

Read H L H L DOUT ICC

Write L L H X DIN ICC

OPERATING RANGE

Range Ambient Temperature VCC

Commercial 0°C to +70°C 2.5V to 3.0V

Industrial –40°C to +85°C 2.5V to 3.0V

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