IS62C256 |
ISSI® |
32K x 8 LOW POWER CMOS STATIC RAM |
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FEATURES
•Access time: 45, 70 ns
•Low active power: 200 mW (typical)
•Low standby power
—250 W (typical) CMOS standby
—28 mW (typical) TTL standby
•Fully static operation: no clock or refresh required
•TTL compatible inputs and outputs
•Single 5V power supply
DESCRIPTION
The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI's highperformance, low power CMOS technology.
When CSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 W (typical) at CMOS input levels.
Easy memory expansion is provided by using an active LOW Chip Select (CS) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS62C256 is pin compatible with other 32K x 8 SRAMs in plastic SOP or TSOP (Type I) package.
FUNCTIONAL BLOCK DIAGRAM
A0-A14 |
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32K X 8 |
DECODER |
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MEMORY ARRAY |
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VCC
GND
I/O
I/O0-I/O7 DATA COLUMN I/O
CIRCUIT
CS
CONTROL
OE CIRCUIT
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
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SR072-1E 05/12/99
IS62C256 |
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ISSI® |
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PIN CONFIGURATION |
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PIN CONFIGURATION |
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28-Pin SOP |
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28-Pin TSOP |
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A14 |
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1 |
28 |
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VCC |
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21 |
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A10 |
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OE |
22 |
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27 |
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A12 |
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2 |
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WE |
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A11 |
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23 |
20 |
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CS |
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26 |
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A13 |
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A9 |
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24 |
19 |
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I/O7 |
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A7 |
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3 |
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A6 |
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4 |
25 |
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A8 |
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A8 |
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25 |
18 |
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I/O6 |
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A5 |
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5 |
24 |
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A9 |
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A13 |
26 |
17 |
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I/O5 |
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27 |
16 |
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I/O4 |
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WE |
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A4 |
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6 |
23 |
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A11 |
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VCC |
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28 |
15 |
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I/O3 |
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A14 |
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1 |
14 |
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GND |
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A3 |
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7 |
22 |
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OE |
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A12 |
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2 |
13 |
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I/O2 |
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A2 |
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8 |
21 |
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A10 |
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A7 |
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3 |
12 |
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I/O1 |
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A1 |
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9 |
20 |
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CS |
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A6 |
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4 |
11 |
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I/O0 |
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A0 |
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10 |
19 |
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I/O7 |
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A5 |
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10 |
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A0 |
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5 |
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I/O0 |
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11 |
18 |
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I/O6 |
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A4 |
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6 |
9 |
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A1 |
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A3 |
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7 |
8 |
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A2 |
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I/O1 |
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12 |
17 |
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I/O5 |
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16 |
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I/O4 |
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I/O2 |
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13 |
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15 |
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I/O3 |
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GND |
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14 |
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PIN DESCRIPTIONS
A0-A14 |
Address Inputs |
CS |
Chip Select Input |
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OE |
Output Enable Input |
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WE |
Write Enable Input |
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I/O0-I/O7 |
Input/Output |
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Vcc |
Power |
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GND |
Ground |
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TRUTH TABLE
Mode |
WE |
CS |
OE |
I/O Operation |
Vcc Current |
Not Selected |
X |
H |
X |
High-Z |
ISB1, ISB2 |
(Power-down) |
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Output Disabled |
H |
L |
H |
High-Z |
ICC1, ICC2 |
Read |
H |
L |
L |
DOUT |
ICC1, ICC2 |
Write |
L |
L |
X |
DIN |
ICC1, ICC2 |
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ABSOLUTE MAXIMUM RATINGS(1)
Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
–0.5 to +7.0 |
V |
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TBIAS |
Temperature Under Bias |
–55 to +125 |
°C |
TSTG |
Storage Temperature |
–65 to +150 |
°C |
PT |
Power Dissipation |
0.5 |
W |
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IOUT |
DC Output Current (LOW) |
20 |
mA |
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Note:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2 |
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
SR072-1E 05/12/99
IS62C256 |
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ISSI® |
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OPERATING RANGE |
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Range |
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Ambient Temperature |
VCC |
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Commercial |
0°C to +70°C |
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5V ± 10% |
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Industrial |
–40°C to +85°C |
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5V ± 10% |
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DC ELECTRICAL CHARACTERISTICS |
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Symbol |
Parameter |
Test Conditions |
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Min. |
Max. |
Unit |
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VOH |
Output HIGH Voltage |
VCC = Min., IOH = –1.0 mA |
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2.4 |
— |
V |
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VOL |
Output LOW Voltage |
VCC = Min., IOL = 2.1 mA |
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0.4 |
V |
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VIH |
Input HIGH Voltage |
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2.2 |
VCC + 0.5 |
V |
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VIL |
Input LOW Voltage(1) |
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–0.3 |
0.8 |
V |
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ILI |
Input Leakage |
GND ≤ VIN ≤ VCC |
Com. |
–2 |
2 |
A |
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Ind. |
–10 |
10 |
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ILO |
Output Leakage |
GND ≤ VOUT ≤ VCC, |
Com. |
–2 |
2 |
A |
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Outputs Disabled |
Ind. |
–10 |
10 |
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Note:
1. VIL = –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
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-45 ns |
-70 ns |
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Symbol |
Parameter |
Test Conditions |
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Min. Max. |
Min. |
Max. |
Unit |
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ICC1 |
Vcc Operating |
VCC = Max., CS = VIL |
Com. |
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60 |
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60 |
mA |
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Supply Current |
IOUT = 0 mA, f = 0 |
Ind. |
— |
70 |
— |
70 |
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ICC2 |
Vcc Dynamic Operating |
VCC = Max., CS = VIL |
Com. |
— |
70 |
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65 |
mA |
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Supply Current |
IOUT = 0 mA, f = fMAX |
Ind. |
— |
80 |
— |
75 |
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ISB1 |
TTL Standby Current |
VCC = Max., |
Com. |
— |
5 |
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5 |
mA |
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(TTL Inputs) |
VIN = VIH or VIL |
Ind. |
— |
10 |
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10 |
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CS ≥ VIH, f = 0 |
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ISB2 |
CMOS Standby |
VCC = Max., |
Com. |
— |
0.5 |
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0.5 |
mA |
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Current (CMOS Inputs) |
CS ≥ VCC – 0.2V, |
Ind. |
— |
1.0 |
— |
1.0 |
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VIN ≥ VCC – 0.2V, or |
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VIN ≤ 0.2V, f = 0 |
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Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE(1,2)
Symbol |
Parameter |
Conditions |
Max. |
Unit |
CIN |
Input Capacitance |
VIN = 0V |
8 |
pF |
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COUT |
Output Capacitance |
VOUT = 0V |
10 |
pF |
Notes:
1.Tested initially and after any design or process changes that may affect these parameters.
2.Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
3 |
SR072-1E 05/12/99