IS62C1024 |
ISSI® |
128K x 8 HIGH-SPEED CMOS STATIC RAM |
JANUARY 2000 |
FEATURES
•High-speed access time: 35, 45, 55, 70 ns
•Low active power: 450 mW (typical)
•Low standby power: 500 µW (typical) CMOS standby
•Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications
•Fully static operation: no clock or refresh required
•TTL compatible inputs and outputs
•Single 5V (±10%) power supply
DESCRIPTION
The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS62C1024 is available in 32-pin 525-mil plastic SOP and TSOP (type 1) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16 |
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512 X 2048 |
DECODER |
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MEMORY ARRAY |
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VCC
GND
I/O
I/O0-I/O7 DATA COLUMN I/O
CIRCUIT
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CE1 |
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CONTROL |
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CE2 |
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CIRCUIT |
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OE |
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WE |
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ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
1 |
Rev. G
01/14/00
IS62C1024 |
ISSI® |
PIN CONFIGURATION
32-Pin SOP
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32 |
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VCC |
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NC |
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1 |
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A16 |
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31 |
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A15 |
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2 |
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A14 |
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30 |
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CE2 |
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3 |
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A12 |
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29 |
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4 |
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WE |
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A7 |
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ISSI |
28 |
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A13 |
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5 |
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A6 |
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62C1024 |
27 |
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A8 |
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6 |
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A5 |
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26 |
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A9 |
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7 |
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A4 |
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8 |
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25 |
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A11 |
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A3 |
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24 |
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9 |
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OE |
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A2 |
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23 |
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A10 |
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10 |
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A1 |
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22 |
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11 |
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CE1 |
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A0 |
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21 |
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I/O7 |
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12 |
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I/O0 |
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20 |
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I/O6 |
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13 |
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I/O1 |
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14 |
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19 |
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I/O5 |
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I/O2 |
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15 |
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18 |
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I/O4 |
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GND |
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16 |
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17 |
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I/O3 |
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PIN DESCRIPTIONS
A0-A16 |
Address Inputs |
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CE1 |
Chip Enable 1 Input |
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CE2 |
Chip Enable 2 Input |
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OE |
Output Enable Input |
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WE |
Write Enable Input |
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I/O0-I/O7 |
Input/Output |
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Vcc |
Power |
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GND |
Ground |
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32-Pin TSOP (Type 1)
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A11 |
1 |
32 |
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OE |
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A9 |
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2 |
31 |
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A10 |
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A8 |
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3 |
30 |
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CE1 |
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A13 |
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4 |
29 |
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I/O7 |
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WE |
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5 |
28 |
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I/O6 |
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CE2 |
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6 |
27 |
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I/O5 |
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A15 |
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7 |
26 |
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I/O4 |
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VCC |
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8 |
25 |
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I/O3 |
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NC |
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9 |
24 |
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GND |
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A16 |
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10 |
23 |
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I/O2 |
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A14 |
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11 |
22 |
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I/O1 |
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A12 |
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12 |
21 |
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I/O0 |
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A7 |
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13 |
20 |
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A0 |
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A6 |
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14 |
19 |
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A1 |
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A5 |
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15 |
18 |
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A2 |
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A4 |
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16 |
17 |
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A3 |
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OPERATING RANGE
Range |
Ambient Temperature |
VCC |
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Commercial |
0°C to +70°C |
5V ± 10% |
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Industrial |
–40°C to +85°C |
5V ± 10% |
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2 |
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Integrated Silicon Solution, Inc. — 1-800-379-4774 |
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Rev. G |
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01/14/00 |
IS62C1024 |
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ISSI® |
TRUTH TABLE |
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Mode |
WE |
CE1 |
CE2 |
OE |
I/O Operation |
Vcc Current |
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Not Selected |
X |
H |
X |
X |
High-Z |
ISB1, ISB2 |
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(Power-down) |
X |
X |
L |
X |
High-Z |
ISB1, ISB2 |
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Output Disabled |
H |
L |
H |
H |
High-Z |
ICC |
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Read |
H |
L |
H |
L |
DOUT |
ICC |
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Write |
L |
L |
H |
X |
DIN |
ICC |
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ABSOLUTE MAXIMUM RATINGS(1)
Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
–0.5 to +7.0 |
V |
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TBIAS |
Temperature Under Bias |
–10 to +85 |
°C |
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TSTG |
Storage Temperature |
–65 to +150 |
°C |
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PT |
Power Dissipation |
1.5 |
W |
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IOUT |
DC Output Current (LOW) |
20 |
mA |
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Notes:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol |
Parameter |
Conditions |
Max. |
Unit |
CIN |
Input Capacitance |
VIN = 0V |
6 |
pF |
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COUT |
Output Capacitance |
VOUT = 0V |
8 |
pF |
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Notes:
1.Tested initially and after any design or process changes that may affect these parameters.
2.Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol |
Parameter |
Test Conditions |
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Min. |
Max. |
Unit |
VOH |
Output HIGH Voltage |
VCC = Min., IOH = –1.0 mA |
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2.4 |
— |
V |
VOL |
Output LOW Voltage |
VCC = Min., IOL = 2.1 mA |
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— |
0.4 |
V |
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VIH |
Input HIGH Voltage |
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2.2 |
VCC + 0.5 |
V |
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VIL |
Input LOW Voltage(1) |
GND ≤ VIN ≤ VCC |
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–0.3 |
0.8 |
V |
ILI |
Input Leakage |
Com. |
–5 |
5 |
µA |
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GND ≤ VOUT ≤ VCC |
Ind. |
–10 |
10 |
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ILO |
Output Leakage |
Com. |
–5 |
5 |
µA |
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Ind. |
–10 |
10 |
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Notes:
1. VIL = –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
3 |
Rev. G
01/14/00