ISSI IS61S6432-8PQ, IS61S6432-7TQI, IS61S6432-7PQI, IS61S6432-7PQ, IS61S6432-8TQI Datasheet

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IS61S6432

ISSI®

64K x 32 SYNCHRONOUS PIPELINE STATIC RAM

FEATURES

Internal self-timed write cycle

Individual Byte Write Control and Global Write

Clock controlled, registered address, data and control

Pentium™ or linear burst sequence control using MODE input

Three chip enables for simple depth expansion and address pipelining

Common data inputs and data outputs

Power-down control by ZZ input

JEDEC 100-Pin TQFP and PQFP package

Single +3.3V power supply

Two Clock enables and one Clock disable to eliminate multiple bank bus contention

Control pins mode upon power-up:

MODE in interleave burst mode

ZZ in normal operation mode

These control pins can be connected to GNDQ or VCCQ to alter their power-up state

• Industrial temperature available

JUNE 2001

DESCRIPTION

The ISSI IS61S6432 is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, secondary cache for the Pentium™, 680X0™, and PowerPC™ microprocessors. It is organized as 65,536 words by 32 bits, fabricated with ISSI's advanced CMOS technology. The device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge- triggered single clock input.

Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be from one to four bytes wide as controlled by the write control inputs.

Separate byte enables allow individual bytes to be written. BW1 controls DQ1-DQ8, BW2 controls DQ9-DQ16, BW3 controls DQ17-DQ24, BW4 controls DQ25-DQ32, conditioned by BWE being LOW. A LOW on GWinput would cause all bytes to be written.

Bursts can be initiated with either ADSP (Address Status Processor) or ADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be generated internally by the IS61S6432 and controlled by the ADV (burst address advance) input pin.

Asynchronous signals include output enable (OE), sleep mode input (ZZ), clock (CLK) and burst mode input (MODE). A HIGH input on the ZZ pin puts the SRAM in the powerdown state. When ZZ is pulled LOW (or no connect), the SRAM normally operates after three cycles of the wake-up period. A LOW input, i.e., GNDQ, on MODE pin selects LINEAR Burst. A VCCQ (or no connect) on MODE pin selects INTERLEAVED Burst.

FAST ACCESS TIME

Symbol

Parameter

-200(1)

-166

-133

-117

-5

-6

-7

-8

Unit

tKQ

CLK Access Time

4

5

5

5

5

6

7

8

ns

 

 

 

 

 

 

 

 

 

 

 

tKC

Cycle Time

5

6

7.5

8.5

10

12

13

15

ns

 

 

 

 

 

 

 

 

 

 

 

Frequency

200

166

133

117

100

83

75

66

MHz

Note:

 

 

 

 

 

 

 

 

 

 

1. ADVANCE INFORMATION ONLY.

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.

Integrated Silicon Solution, Inc. • 1-800-379-4774

1

Rev. B 06/28/01

ISSI IS61S6432-8PQ, IS61S6432-7TQI, IS61S6432-7PQI, IS61S6432-7PQ, IS61S6432-8TQI Datasheet

IS61S6432

ISSI®

BLOCK DIAGRAM

 

 

 

MODE

 

 

 

CLK

CLK

Q0

A0

A0'

 

 

 

 

 

 

 

 

 

 

BINARY

 

 

 

 

 

COUNTER

 

A1'

 

 

ADV

CE

Q1

A1

 

 

64K x 32

 

 

 

 

 

ADSC

 

 

 

 

CLR

 

 

MEMORY

 

ADSP

 

 

 

 

 

 

 

 

 

 

 

ARRAY

 

16

D

Q

14

16

 

 

A15-A0

 

 

 

 

 

ADDRESS

 

 

 

 

 

REGISTER

 

 

 

 

 

CE

 

 

 

 

 

 

CLK

 

 

32

32

 

 

 

 

 

 

GW

D

Q

 

 

 

 

BWE

DQ32-DQ25

 

 

 

 

BW4

BYTE WRITE

 

 

 

 

 

REGISTERS

 

 

 

 

 

CLK

 

 

 

 

 

 

D

Q

 

 

 

 

 

DQ24-DQ17

 

 

 

 

BW3

BYTE WRITE

 

 

 

 

 

REGISTERS

 

 

 

 

 

CLK

 

 

 

 

 

 

D

Q

 

 

 

 

 

DQ16-DQ9

 

 

 

 

BW2

BYTE WRITE

 

 

 

 

 

REGISTERS

 

 

 

 

 

CLK

 

 

 

 

 

 

D

Q

 

 

 

 

BW1

DQ8-DQ1

 

 

 

 

BYTE WRITE

 

 

 

 

 

REGISTERS

 

 

 

 

 

CLK

 

 

 

 

 

CE1

 

 

 

4

 

 

CE2

D

Q

 

INPUT

OUTPUT

32

CE3

ENABLE

 

 

REGISTERS

REGISTERS

DATA[32:1]

 

 

 

 

OE

 

REGISTER

 

CLK

CLK

 

 

 

 

CE

 

 

 

 

 

 

CLK

 

 

 

 

 

 

D

Q

 

 

 

 

 

ENABLE

 

 

 

 

 

 

DELAY

 

 

 

 

 

 

REGISTER

 

 

 

 

 

CLK

 

 

 

 

 

OE

 

 

 

 

 

 

PB

 

 

 

Integrated Silicon Solution, Inc. • 1-800-379-4774

Rev.B 06/28/01

IS61S6432

 

 

 

 

 

 

 

 

 

 

 

ISSI®

PIN CONFIGURATION

 

 

 

 

 

 

 

 

 

100-Pin TQFP and PQFP (Top View)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A6

A7 CE1

CE2

BW4 BW3 BW2 BW1

CE3 VCC

GND CLK GW

BWE

OE

ADSC ADSP ADV A8

A9

 

 

 

100 99 98 97

96 95 94 93

92 91 90 89 88 87 86

85 84 83 82 81

 

 

NC

1

 

 

 

 

 

 

 

 

80

NC

 

DQ17

2

 

 

 

 

 

 

 

 

79

DQ16

 

DQ18

3

 

 

 

 

 

 

 

 

78

DQ15

 

VCCQ

4

 

 

 

 

 

 

 

 

77

VCCQ

 

GNDQ

5

 

 

 

 

 

 

 

 

76

GNDQ

 

DQ19

6

 

 

 

 

 

 

 

 

75

DQ14

 

DQ20

7

 

 

 

 

 

 

 

 

74

DQ13

 

DQ21

8

 

 

 

 

 

 

 

 

73

DQ12

 

DQ22

9

 

 

 

 

 

 

 

 

72

DQ11

 

GNDQ

10

 

 

 

 

 

 

 

 

71

GNDQ

 

VCCQ

11

 

 

 

 

 

 

 

 

70

VCCQ

 

DQ23

12

 

 

 

 

 

 

 

 

69

DQ10

 

DQ24

13

 

 

 

 

 

 

 

 

68

DQ9

 

VCCQ

14

 

 

 

 

 

 

 

 

67

GND

 

VCC

15

 

 

 

 

 

 

 

 

66

NC

 

NC

16

 

 

 

 

 

 

 

 

65

VCC

 

GND

17

 

 

 

 

 

 

 

 

64

ZZ

 

DQ25

18

 

 

 

 

 

 

 

 

63

DQ8

 

DQ26

19

 

 

 

 

 

 

 

 

62

DQ7

 

VCCQ

20

 

 

 

 

 

 

 

 

61

VCCQ

 

GNDQ

21

 

 

 

 

 

 

 

 

60

GNDQ

 

DQ27

22

 

 

 

 

 

 

 

 

59

DQ6

 

DQ28

23

 

 

 

 

 

 

 

 

58

DQ5

 

DQ29

24

 

 

 

 

 

 

 

 

57

DQ4

 

DQ30

25

 

 

 

 

 

 

 

 

56

DQ3

 

GNDQ

26

 

 

 

 

 

 

 

 

55

GNDQ

 

VCCQ

27

 

 

 

 

 

 

 

 

54

VCCQ

 

DQ31

28

 

 

 

 

 

 

 

 

53

DQ2

 

DQ32

29

 

 

 

 

 

 

 

 

52

DQ1

 

NC

30

 

 

 

 

 

 

 

 

51

NC

 

 

31 32 33

34 35 36 37 38 39 40

41 42 43 44 45 46 47 48 49 50

 

 

 

MODE

A5 A4

A3

A2 A1 A0 NC

NC GND

VCC NC NC

A10

A11

A12 A13 A14 A15

NC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PIN DESCRIPTIONS

A0-A15

Address Inputs

 

 

CLK

Clock

 

 

ADSP

Processor Address Status

 

 

ADSC

Controller Address Status

 

 

ADV

Burst Address Advance

 

 

BW1-BW4

Synchronous Byte Write Enable

 

 

BWE

Byte Write Enable

 

 

GW

Global Write Enable

 

 

CE1, CE2, CE3

Synchronous Chip Enable

 

 

OE

Output Enable

 

 

DQ1-DQ32

Data Input/Output

 

 

ZZ

Sleep Mode

 

 

MODE

Burst Sequence Mode

 

 

VCC

+3.3V Power Supply

 

 

GND

Ground

 

 

VCCQ

Isolated Output Buffer Supply: +3.3V

 

 

GNDQ

Isolated Output Buffer Ground

 

 

NC

No Connect

 

 

Integrated Silicon Solution, Inc. • 1-800-379-4774

3

Rev.B 06/28/01

IS61S6432

 

 

 

 

 

 

 

 

ISSI®

TRUTH TABLE

 

 

 

 

 

 

 

 

 

 

 

Address

 

 

 

 

 

 

 

 

 

Operation

Used

CE1

CE2

CE3

ADSP

ADSC

ADV

WRITE

OE

DQ

 

 

 

 

 

 

 

 

 

 

 

Deselected, Power-down

None

H

X

X

X

L

X

X

X

High-Z

 

 

 

 

 

 

 

 

 

 

 

Deselected, Power-down

None

L

L

X

L

X

X

X

X

High-Z

Deselected, Power-down

None

L

X

H

L

X

X

X

X

High-Z

 

 

 

 

 

 

 

 

 

 

 

Deselected, Power-down

None

L

L

X

H

L

X

X

X

High-Z

 

 

 

 

 

 

 

 

 

 

 

Deselected, Power-down

None

L

X

H

H

L

X

X

X

High-Z

Read Cycle, Begin Burst

External

L

H

L

L

X

X

X

L

Q

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Begin Burst

External

L

H

L

L

X

X

X

H

High-Z

 

 

 

 

 

 

 

 

 

 

 

Write Cycle, Begin Burst

External

L

H

L

H

L

X

L

X

D

Read Cycle, Begin Burst

External

L

H

L

H

L

X

H

L

Q

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Begin Burst

External

L

H

L

H

L

X

H

H

High-Z

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Continue Burst

Next

X

X

X

H

H

L

H

L

Q

Read Cycle, Continue Burst

Next

X

X

X

H

H

L

H

H

High-Z

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Continue Burst

Next

H

X

X

X

H

L

H

L

Q

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Continue Burst

Next

H

X

X

X

H

L

H

H

High-Z

Write Cycle, Continue Burst

Next

X

X

X

H

H

L

L

X

D

 

 

 

 

 

 

 

 

 

 

 

Write Cycle, Continue Burst

Next

H

X

X

X

H

L

L

X

D

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Suspend Burst

Current

X

X

X

H

H

H

H

L

Q

Read Cycle, Suspend Burst

Current

X

X

X

H

H

H

H

H

High-Z

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Suspend Burst

Current

H

X

X

X

H

H

H

L

Q

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Suspend Burst

Current

H

X

X

X

H

H

H

H

High-Z

Write Cycle, Suspend Burst

Current

X

X

X

H

H

H

L

X

D

 

 

 

 

 

 

 

 

 

 

 

Write Cycle, Suspend Burst

Current

H

X

X

X

H

H

L

X

D

 

 

 

 

 

 

 

 

 

 

 

Notes:

1.All inputs except OE must meet setup and hold times for the Low-to-High transition of clock (CLK).

2.Wait states are inserted by suspending burst.

3."X" means don't care. WRITE=L means any one or more byte write enable signals (BW1-BW4) and BWE are LOW or GW is LOW. WRITE=H means all byte write enable signals are HIGH.

4.For a Write operation following a Read operation, OE must be HIGH before the input data required setup time and held HIGH throughout the input data hold time.

5.ADSP LOW always initiates an internal READ at the Low-to-High edge of clock. A WRITE is performed by setting one or more byte write enable signals and BWE LOW or GW LOW for the subsequent L-H edge of clock.

PARTIAL TRUTH TABLE

Function

GW

BWE

BW1

BW2

BW3

BW4

 

 

 

 

 

 

 

READ

H

H

X

X

X

X

 

 

 

 

 

 

 

READ

H

X

H

H

H

H

 

 

 

 

 

 

 

WRITE Byte 1

H

L

L

H

H

H

WRITE All Bytes

X

L

L

L

L

L

 

 

 

 

 

 

 

WRITE All Bytes

L

X

X

X

X

X

 

 

 

 

 

 

 

PB

Integrated Silicon Solution, Inc. • 1-800-379-4774

 

Rev.B

 

06/28/01

IS61S6432

 

 

 

ISSI®

INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)

 

 

 

 

 

External Address

1st Burst Address

2nd Burst Address

3rd Burst Address

A1 A0

A1 A0

A1 A0

A1 A0

 

 

 

 

 

00

01

10

11

 

01

00

11

10

 

 

 

 

 

 

10

11

00

01

 

 

 

 

 

 

11

10

01

00

 

 

 

 

 

 

LINEAR BURST ADDRESS TABLE (MODE = GNDQ)

0,0

A1', A0' = 1,1

0,1

1,0

ABSOLUTE MAXIMUM RATINGS(1,2,3)

Symbol

Parameter

Value

Unit

TBIAS

Temperature Under Bias

–40 to +85

°C

TSTG

Storage Temperature

–55 to +150

°C

 

 

 

 

PD

Power Dissipation

1.8

W

 

 

 

 

IOUT

Output Current (per I/O)

100

mA

VIN, VOUT

Voltage Relative to GND for I/O Pins

–0.5 to VCCQ + 0.3

V

 

 

 

 

VIN

Voltage Relative to GND for for Address and Control Inputs

–0.5 to 5.5

V

 

 

 

 

Notes:

1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2.This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however, precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.

3.This device contains circuitry that will ensure the output devices are in High-Z at power up.

OPERATING RANGE

Range

Ambient Temperature

VCC

 

Commercial

0°C to +70°C

3.3V +10%, –5%

 

Industrial

–40°C to +85°C

3.3V +10%, –5%

 

 

 

 

 

 

 

Integrated Silicon Solution, Inc. • 1-800-379-4774

5

Rev.B

 

 

 

06/28/01

 

 

 

IS61S6432

 

 

 

ISSI®

DC ELECTRICAL CHARACTERISTICS(1,2) (Over Operating Range)

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Test Conditions

 

Min.

Max.

Unit

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

IOH = –5.0 mA

 

2.4

V

 

 

 

 

 

 

 

VOL

Output LOW Voltage

IOL = 5.0 mA

 

0.4

V

 

 

 

 

 

 

 

VIH

Input HIGH Voltage

 

 

2.0

VCCQ + 0.3

V

 

 

 

 

 

 

 

VIL

Input LOW Voltage

 

 

–0.3

0.8

V

 

 

 

 

 

 

 

ILI

Input Leakage Current

GND - VIN - VCCQ(2)

Com.

–5

5

µA

 

 

 

Ind.

–10

10

 

 

 

 

 

 

 

 

ILO

Output Leakage Current

GND - VOUT - VCCQ, OE = VIH

Com.

–5

5

µA

 

 

 

Ind.

–10

10

 

 

 

 

 

 

 

 

Notes:

1.MODE pin have an internal pull-up. ZZ pin has an internal pull-down. These pins may be a No Connect, tied to GND,or tied to VCCQ.

2.MODE pin should be tied to Vcc or GND. They exhibit ±30 µA maximum leakage current when tied to - GND + 0.2V or • Vcc – 0.2V.

POWER SUPPLY CHARACTERISTICS (Operating Range)

 

 

 

 

-200(1)

-166

-133

-117

 

Symbol

Parameter

Test Conditions

 

Min. Max.

Min. Max.

Min. Max.

Min. Max.

Unit

ICC

AC Operating

Device Selected,

Com.

400

215

205

195

mA

 

Supply Current

All Inputs = VIL or VIH

Ind.

205

 

 

 

OE = VIH, Cycle Time • tKC min.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB

Standby Current

Device Deselected,

Com.

100

70

60

50

mA

 

 

VCC = Max.,

Ind.

60

 

 

 

CLK Cycle Time • tKC min.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IZZ

Power-Down

ZZ = VCCQ, CLK Running

Com.

5

5

5

5

mA

 

Mode Current

All Inputs - GND + 0.2V

Ind.

10

 

 

 

or • VCC – 0.2V

 

 

 

 

 

 

 

 

 

 

Note:

 

 

 

 

 

 

 

 

 

 

 

 

1. ADVANCE INFORMATION ONLY.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-5

 

-6

 

-7

 

-8

 

Symbol

Parameter

Test Conditions

 

Min. Max.

Min. Max.

Min. Max.

Min. Max.

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

AC Operating

Device Selected,

Com.

175

165

150

140

mA

 

Supply Current

All Inputs = VIL or VIH

Ind.

185

175

160

150

 

 

 

OE = VIH, Cycle Time • tKC min.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB

Standby Current

Device Deselected,

Com.

25

25

25

25

mA

 

 

VCC = Max.,

Ind.

35

35

35

35

 

 

 

CLK Cycle Time • tKC min.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IZZ

Power-Down

ZZ = VCCQ, CLK Running

Com.

5

5

5

5

mA

 

Mode Current

All Inputs - GND + 0.2V

Ind.

10

10

10

10

 

 

 

or • VCC – 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PB

Integrated Silicon Solution, Inc. • 1-800-379-4774

 

Rev.B

 

06/28/01

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