ISSI IS42S16100-10T, IS42S16100-7T, IS42S16100-6T, IS42S16100-8T Datasheet

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IS42S16100

ISSI®

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

SEPTEMBER 2000

FEATURES

DESCRIPTION

•Clock frequency: 166, 143, 125, 100 MHz

•Fully synchronous; all signals referenced to a positive clock edge

•Two banks can be operated simultaneously and independently

•Dual internal bank controlled by A11 (bank select)

•Single 3.3V power supply

•LVTTL interface

•Programmable burst length

– (1, 2, 4, 8, full page)

•Programmable burst sequence: Sequential/Interleave

•Auto refresh, self refresh

•4096 refresh cycles every 128 ms

•Random column address every clock cycle

•Programmable CAS latency (2, 3 clocks)

•Burst read/write and burst read/single write operations capability

•Burst termination by burst stop and precharge command

•Byte controlled by LDQM and UDQM

•Package 400-mil 50-pin TSOP II

PIN DESCRIPTIONS

ISSI's 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. ThesynchronousDRAMsachievehigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

PIN CONFIGURATIONS

50-Pin TSOP (Type II)

						50
VCC					1	50	GND
		I/O0				49	I/O15
		I/O0			2	49	I/O15
		I/O1				48	I/O14
		I/O1			3	48	I/O14
GNDQ						47	GNDQ
GNDQ					4	47	GNDQ
		I/O2				46	I/O13
		I/O2			5	46	I/O13
		I/O3				45	I/O12
		I/O3			6	45	I/O12
VCCQ						44	VCCQ
VCCQ					7	44	VCCQ
		I/O4			8	43	I/O11
		I/O4			8	43	I/O11
		I/O5				42	I/O10
		I/O5			9	42	I/O10
GNDQ						41	GNDQ
GNDQ					10	41	GNDQ
		I/O6				40	I/O9
		I/O6			11	40	I/O9
I/O7						39	I/O8
I/O7					12	39	I/O8
VCCQ					13	38	VCCQ
VCCQ					13	38	VCCQ
LDQM						37	NC
LDQM					14	37	NC
						36
		WE			15	36	UDQM
					16	35	CLK
		CAS			16	35	CLK
						34
	RAS				17	34	CKE
						33
			CS		18	33	NC
		A11			19	32	A9
		A11			19	32	A9
		A10			20	31	A8
		A10			20	31	A8
				A0	21	30	A7
				A0	21	30	A7
				A1	22	29	A6
				A1	22	29	A6
				A2	23	28	A5
				A2	23	28	A5
				A3	24	27	A4
				A3	24	27	A4
VCC						26	GND
VCC					25	26	GND

A0-A11	Address Input

A0-A10	Row Address Input

A11	Bank Select Address

A0-A7	Column Address Input

I/O0 to I/O15	Data I/O

CLK	System Clock Input

CKE	Clock Enable

CS	Chip Select

RAS	Row Address Strobe Command

CAS	Column Address Strobe Command

WE	Write Enable

LDQM	Lower Bye, Input/Output Mask

UDQM	Upper Bye, Input/Output Mask

Vcc	Power

GND	Ground

VccQ	Power Supply for I/O Pin

GNDQ	Ground for I/O Pin

NC	No Connection

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100			ISSI®
PIN FUNCTIONS

Pin No.	Symbol	Type	Function (In Detail)

20 to 24	A0-A10	Input Pin	A0 to A10 are address inputs. A0-A10 are used as row address inputs during active
27 to 32			command input and A0-A7 as column address inputs during read or write command
			input. A10 is also used to determine the precharge mode during other commands. If
			A10 is LOW during precharge command, the bank selected by A11 is precharged,
			but if A10 is HIGH, both banks will be precharged.
			When A10 is HIGH in read or write command cycle, the precharge starts automati-
			cally after the burst access.
			These signals become part of the OP CODE during mode register set command
			input.

19	A11	Input Pin	A11 is the bank selection signal. When A11 is LOW, bank 0 is selected and when
			high, bank 1 is selected. This signal becomes part of the OP CODE during mode
			register set command input.
16	CAS	Input Pin	CAS, in conjunction with the RAS and WE, forms the device command. See the
			"Command Truth Table" item for details on device commands.

34	CKE	Input Pin	The CKE input determines whether the CLK input is enabled within the device.
			When is CKE HIGH, the next rising edge of the CLK signal will be valid, and when
			LOW, invalid. When CKE is LOW, the device will be in either the power-down mode,
			the clock suspend mode, or the self refresh mode. The CKE is an asynchronous input.

35	CLK	Input Pin	CLK is the master clock input for this device. Except for CKE, all inputs to this device
			are acquired in synchronization with the rising edge of this pin.

18	CS	Input Pin	The CS input determines whether command input is enabled within the device.
			Command input is enabled when CS is LOW, and disabled with CS is HIGH. The
			device remains in the previous state when CS is HIGH.

2, 3, 5, 6, 8, 9, 11	I/O0 to	I/O Pin	I/O0 to I/O15 are I/O pins. I/O through these pins can be controlled in byte units
12, 39, 40, 42, 43,	I/O15		using the LDQM and UDQM pins.
45, 46, 48, 49
14, 36	LDQM,	Input Pin	LDQM and UDQM control the lower and upper bytes of the I/O buffers. In read
	UDQM		mode, LDQM and UDQM control the output buffer. When LDQM or UDQM is LOW,
			the corresponding buffer byte is enabled, and when HIGH, disabled. The outputs go
			to the HIGH impedance state when LDQM/UDQM is HIGH. This function corre-
			sponds to OE in conventional DRAMs. In write mode, LDQM and UDQM control the
			input buffer. When LDQM or UDQM is LOW, the corresponding buffer byte is
			enabled, and data can be written to the device. When LDQM or UDQM is HIGH,
			input data is masked and cannot be written to the device.

17	RAS	Input Pin	RAS, in conjunction with CAS and WE, forms the device command. See the
			"Command Truth Table" item for details on device commands.

15	WE	Input Pin	WE, in conjunction with RAS and CAS, forms the device command. See the
			"Command Truth Table" item for details on device commands.

7, 13, 38, 44	VCCQ	Power Supply Pin	VCCQ is the output buffer power supply.

1, 25	VCC	Power Supply Pin	VCC is the device internal power supply.

4, 10, 41, 47	GNDQ	Power Supply Pin	GNDQ is the output buffer ground.
26, 50	GND	Power Supply Pin	GND is the device internal ground.

2 Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100

ISSI®

FUNCTIONAL BLOCK DIAGRAM

CLK

CKE

DECODER

COMMAND

MEMORY CELL

RAS

DECODER

ROW

ARRAY

CAS

ADDRESS

2048

CLOCK

MODE

BUFFER

BANK 0

ROW

A11

GENERATOR

DQM

SENSE AMP I/O GATE

DATA IN

BUFFER

A10

ADDRESS LATCH

BURST COUNTER

ADDRESS BUFFER

256

SELF

COLUMN

REFRESH

COLUMN DECODER

I/O 0-15

CONTROLLER

REFRESH

CONTROLLER

256

REFRESH

SENSE AMP I/O GATE

DATA OUT

BUFFER

COUNTER

ROW DECODER

MEMORY CELL

MULTIPLEXER

Vcc/VccQ

ARRAY

ROW

2048

GND/GNDQ

ADDRESS

BANK 1

ROW

BUFFER

ADDRESS

LATCH

S16BLK.eps

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100				ISSI®
ABSOLUTE MAXIMUM RATINGS(1)

Symbol	Parameters	Rating	Unit

VCC MAX	Maximum Supply Voltage	–1.0 to +4.6	V
VCCQ MAX	Maximum Supply Voltage for Output Buffer	–1.0 to +4.6	V

VIN	Input Voltage	–1.0 to +4.6	V

VOUT	Output Voltage	–1.0 to +4.6	V

PD MAX	Allowable Power Dissipation	1	W

ICS	Output Shorted Current	50	mA
TOPR	Operating Temperature	0 to +70	°C
TSTG	Storage Temperature	–55 to +150	°C

DC RECOMMENDED OPERATING CONDITIONS(2) (At TA = 0 to +70°C)

Symbol	Parameter	Min.	Typ.	Max.	Unit
VCC, VCCQ	Supply Voltage	3.0	3.3	3.6	V

VIH	Input High Voltage(3)	2.0	—	VDD + 0.3	V
VIL	Input Low Voltage(4)	-0.3	—	+0.8	V

CAPACITANCE CHARACTERISTICS(1,2) (At TA = 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)

Symbol	Parameter	Typ.	Max.	Unit
CIN1	Input Capacitance: A0-A11	—	4	pF
CIN2	Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)	—	4	pF

CI/O	Data Input/Output Capacitance: I/O0-I/O15	—	5	pF

Notes:

1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2.All voltages are referenced to GND.

3.VIH (max) = VCCQ + 2.0V with a pulse width ≤ 3 ns.

4.VIL (min) = GND – 2.0V with a pulse < 3 ns and -1.5V with a pulse < 5ns.

4 Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100						ISSI®
DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)

Symbol	Parameter	Test Condition		Speed	Min.	Max.	Unit

IIL	Input Leakage Current	0V ≤ VIN ≤ VCC, with pins other than			–5	5	µA
		the tested pin at 0V
IOL	Output Leakage Current	Output is disabled			–5	5	µA
		0V ≤ VOUT ≤ VCC
VOH	Output High Voltage Level	IOUT = –2 mA			2.4	—	V
VOL	Output Low Voltage Level	IOUT = +2 mA			—	0.4	V

ICC1	Operating Current(1,2)	One Bank Operation,	CAS latency = 3	-6	—	190	mA
		Burst Length=1		-7	—	160	mA
		tRC ≥ tRC (min.)		-8	—	140	mA
		IOUT = 0mA		-10	—	120	mA
		CKE ≤ VIL (MAX)
ICC2P	Precharge Standby Current	CKE ≤ VIL (MAX)	tCK = tCK (MIN)	—	—	3	mA
ICC2PS	(In Power-Down Mode)		tCK = ∞	—	—	2	mA
ICC2N	Precharge Standby Current	CKE ≥ VIH (MIN)	tCK = tCK (MIN)	—	—	30	mA
ICC2NS	(In Non Power-Down Mode)		tCK = ∞	—	—	6	mA
ICC3P	Active Standby Current	CKE ≤ VIL (MAX)	tCK = tCK (MIN)	—	—	3	mA
ICC3PS	(In Power-Down Mode)		tCK = ∞	—	—	2	mA
ICC3N	Active Standby Current	CKE ≥ VIH (MIN)	tCK = tCK (MIN)	—	—	40	mA
ICC3NS	(In Non Power-Down Mode)		tCK = ∞	—	—	15	mA
ICC4	Operating Current	tCK = tCK (MIN)	CAS latency = 3	-6	—	210	mA
	(In Burst Mode)(1)	IOUT = 0mA		-7	—	180	mA
				-8	—	160	mA
				-10	—	140	mA

			CAS latency = 2	-6	—	210	mA
				-7	—	180	mA
				-8	—	160	mA
				-10	—	140	mA

ICC5	Auto-Refresh Current	tRC = tRC (MIN)	CAS latency = 3	-6	—	210	mA
				-7	—	180	mA
				-8	—	160	mA
				-10	—	140	mA

			CAS latency = 2	-6	—	210	mA
				-7	—	180	mA
				-8	—	160	mA
				-10	—	140	mA
ICC6	Self-Refresh Current	CKE ≤ 0.2V		—	—	1	mA

Notes:

1.These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vcc and GND for each memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents.

2.Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100						ISSI®
AC CHARACTERISTICS(1,2,3)

			-6		-7
Symbol	Parameter		Min.	Max.	Min.	Max.	Units

tCK3	Clock Cycle Time	CAS Latency = 3	6	—	7	—	ns
tCK2		CAS Latency = 2	8	—	8.6	—	ns

tAC3	Access Time From CLK(4)	CAS Latency = 3	—	5.5	—	6	ns
tAC2		CAS Latency = 2	—	6	—	6	ns
tCHI	CLK HIGH Level Width		2	—	2.5	—	ns
tCL	CLK LOW Level Width		2	—	2.5	—	ns

tOH3	Output Data Hold Time	CAS Latency = 3	2.5	—	2.5	—	ns
tOH2		CAS Latency = 2	2.5	—	2.5	—	ns
tLZ	Output LOW Impedance Time		0	—	0	—	ns

tHZ3	Output HIGH Impedance Time(5)	CAS Latency = 3	—	5.5	—	6	ns
tHZ2		CAS Latency = 2	—	6	—	6	ns
tDS	Input Data Setup Time		2	—	2	—	ns

tDH	Input Data Hold Time		1	—	1	—	ns

tAS	Address Setup Time		2	—	2	—	ns

tAH	Address Hold Time		1	—	1	—	ns

tCKS	CKE Setup Time		2	—	2	—	ns

tCKH	CKE Hold Time		1	—	1	—	ns
tCKA	CKE to CLK Recovery Delay Time		1CLK+3	—	1CLK+3	—	ns

tCS	Command Setup Time (CS, RAS, CAS, WE, DQM)		2	—	2	—	ns

tCH	Command Hold Time (CS, RAS, CAS, WE, DQM)		1	—	1	—	ns

tRC	Command Period (REF to REF / ACT to ACT)		60	—	63	—	ns

tRAS	Command Period (ACT to PRE)		42	100,000	42	100,000	ns

tRP	Command Period (PRE to ACT)		18	—	20	—	ns
tRCD	Active Command To Read / Write Command Delay Time		16	—	16	—	ns

tRRD	Command Period (ACT [0] to ACT[1])		12	—	14	—	ns

tDPL3	Input Data To Precharge	CAS Latency = 3	1CLK	—	1CLK	—	ns
	Command Delay time
tDPL2		CAS Latency = 2	1CLK	—	1CLK	—	ns

tDAL3	Input Data To Active / Refresh	CAS Latency = 3	1CLK+tRP	—	1CLK+tRP	—	ns
	Command Delay time (During Auto-Precharge)
tDAL2		CAS Latency = 2	1CLK+tRP	—	1CLK+tRP	—	ns

tT	Transition Time		1	10	1	10	ns
tREF	Refresh Cycle Time (4096)		—	128	—	128	ms

Notes:

1.When power is first applied, memory operation should be started 100 µs after Vcc and VccQ reach their stipulated voltages. Also note that the power-on sequence must be executed before starting memory operation.

2.Measured with tT = 1 ns.

3.The reference level is 1.4 V when measuring input signal timing. Rise and fall times are measured between VIH (min.) and VIL (max.).

4.Access time is measured at 1.4V with the load shown in the figure below.

5.The time tHZ (max.) is defined as the time required for the output voltage to transition by ± 200 mV from VOH (min.) or VOL (max.) when the output is in the high impedance state.

6 Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100						ISSI®
AC CHARACTERISTICS(1,2,3)

			-8		-10
Symbol	Parameter		Min.	Max.	Min.	Max.	Units

tCK3	Clock Cycle Time	CAS Latency = 3	8	—	10	—	ns
tCK2		CAS Latency = 2	10	—	10	—	ns

tAC3	Access Time From CLK(4)	CAS Latency = 3	—	6	—	7	ns
tAC2		CAS Latency = 2	—	7	—	9	ns
tCHI	CLK HIGH Level Width		3	—	3.5	—	ns
tCL	CLK LOW Level Width		3	—	3.5	—	ns

tOH3	Output Data Hold Time	CAS Latency = 3	2.5	—	2.5	—	ns
tOH2		CAS Latency = 2	2.5	—	2.5	—	ns
tLZ	Output LOW Impedance Time		0	—	0	—	ns

tHZ3	Output HIGH Impedance Time(5)	CAS Latency = 3	—	6	—	7	ns
tHZ2		CAS Latency = 2	—	7	—	9	ns
tDS	Input Data Setup Time		2.5	—	2.5	—	ns

tDH	Input Data Hold Time		1	—	1	—	ns

tAS	Address Setup Time		2.5	—	2.5	—	ns

tAH	Address Hold Time		1	—	1	—	ns

tCKS	CKE Setup Time		2.5	—	2.5	—	ns

tCKH	CKE Hold Time		1	—	1	—	ns
tCKA	CKE to CLK Recovery Delay Time		1CLK+3	—	1CLK+3	—	ns

tCS	Command Setup Time (CS, RAS, CAS, WE, DQM)		2.5	—	2.5	—	ns

tCH	Command Hold Time (CS, RAS, CAS, WE, DQM)		1	—	1	—	ns

tRC	Command Period (REF to REF / ACT to ACT)		68	—	70	—	ns

tRAS	Command Period (ACT to PRE)		48	100,000	50	100,000	ns

tRP	Command Period (PRE to ACT)		20	—	20	—	ns
tRCD	Active Command To Read / Write Command Delay Time		20	—	20	—	ns

tRRD	Command Period (ACT [0] to ACT[1])		16	—	20	—	ns

tDPL3	Input Data To Precharge	CAS Latency = 3	1CLK	—	1CLK	—	ns
	Command Delay time
tDPL2		CAS Latency = 2	1CLK	—	1CLK	—	ns

tDAL3	Input Data To Active / Refresh	CAS Latency = 3	1CLK+tRP	—	1CLK+tRP	—	ns
	Command Delay time (During Auto-Precharge)
tDAL2		CAS Latency = 2	1CLK+tRP	—	1CLK+tRP	—	ns

tT	Transition Time		1	10	1	10	ns
tREF	Refresh Cycle Time		—	128	—	128	ms

Notes:

2.Measured with tT = 1 ns.

3.The reference level is 1.4 V when measuring input signal timing. Rise and fall times are measured between VIH (min.) and VIL (max.).

4.Access time is measured at 1.4V with the load shown in the figure below.

5.The time tHZ (max.) is defined as the time required for the output voltage to transition by ± 200 mV from VOH (min.) or VOL (max.) when the output is in the high impedance state.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100					ISSI®
OPERATING FREQUENCY / LATENCY RELATIONSHIPS

SYMBOL	PARAMETER	-6	-7	-8.	-10.	UNITS

—	Clock Cycle Time	6	7	8	10	ns
—	Operating Frequency	166	143	125	100	MHz

tCAC	CAS Latency	3	3	3	3	cycle

tRCD	Active Command To Read/Write Command Delay Time	3	3	3	3	cycle

tRAC	RAS Latency (tRCD + tCAC)	6	6	6	6	cycle

tRC	Command Period (REF to REF / ACT to ACT)	9	9	9	9	cycle
tRAS	Command Period (ACT to PRE)	6	6	6	6	cycle
tRP	Command Period (PRE to ACT)	3	3	3	3	cycle

tRRD	Command Period (ACT[0] to ACT [1])	3	3	3	3	cycle

tCCD	Column Command Delay Time	1	1	1	1	cycle
	(READ, READA, WRIT, WRITA)

tDPL	Input Data To Precharge Command Delay Time	1	1	1	1	cycle

tDAL	Input Data To Active/Refresh Command Delay Time	4	4	4	4	cycle
	(During Auto-Precharge)
tRBD	Burst Stop Command To Output in HIGH-Z Delay Time	3	3	3	3	cycle
	(Read)

tWBD	Burst Stop Command To Input in Invalid Delay Time	0	0	0	0	cycle
	(Write)

tRQL	Precharge Command To Output in HIGH-Z Delay Time	3	3	3	3	cycle
	(Read)

tWDL	Precharge Command To Input in Invalid Delay Time	0	0	0	0	cycle
	(Write)
tPQL	Last Output To Auto-Precharge Start Time (Read)	–2	–1	–2	–1	cycle

tQMD	DQM To Output Delay Time (Read)	2	2	2	2	cycle

tDMD	DQM To Input Delay Time (Write)	0	0	0	0	cycle

tMCD	Mode Register Set To Command Delay Time	2	2	2	2	cycle

AC TEST CONDITIONS (Input/Output Reference Level: 1.4V)

Input			tCK
		tCHI	tCL
	2.0V
CLK	1.4V
	0.8V
	tCS	tCH
	2.0V
INPUT	1.4V
	0.8V		tAC
	tOH		tAC
	tOH
OUTPUT		1.4V	1.4V
Output Load			50 Ω

I/O	+1.4V
	50 pF

8 Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100

ISSI®

COMMANDS

Active Command		Read Command
CLK		CLK
CKE	HIGH	CKE	HIGH
CS		CS
RAS		RAS
CAS		CAS
WE		WE
A0-A9	ROW	A0-A9	COLUMN (1)
			AUTO PRECHARGE
A10	ROW	A10
			NO PRECHARGE
	BANK 1		BANK 1
A11		A11
	BANK 0		BANK 0

Write Command

Precharge Command

CLK

CKE

HIGH

CKE HIGH

RAS

CAS

A0-A9

COLUMN(1)

A0-A9

AUTO PRECHARGE

BANK 0 AND BANK 1

A10

NO PRECHARGE

BANK 0 OR BANK 1

BANK 1

A11

BANK 0

Notes:

Don't Care

1. A8-A9 = Don't Care.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100	ISSI®
COMMANDS (cont.)
No-Operation Command	Device Deselect Command
CLK	CLK
CKE HIGH	CKE HIGH
CS	CS
RAS	RAS
CAS	CAS
WE	WE
A0-A9	A0-A9
A10	A10
A11	A11

Mode Register Set Command		Auto-Refresh Command
CLK		CLK
CKE	HIGH	CKE HIGH
CS		CS
RAS		RAS
CAS		CAS
WE		WE
A0-A9	OP-CODE	A0-A9
A10	OP-CODE	A10
A11	OP-CODE	A11

Don't Care

10 Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

ISSI IS42S16100-10T, IS42S16100-7T, IS42S16100-6T, IS42S16100-8T Datasheet

IS42S16100		ISSI®
COMMANDS (cont.)
Self-Refresh Command	Power Down Command
CLK	CLK
CKE	CKE ALL BANKS IDLE
CS	CS	NOP
RAS	RAS	NOP
CAS	CAS	NOP
WE	WE	NOP
A0-A9	A0-A9
A10	A10
A11	A11

Clock Suspend Command		Burst Stop Command
CLK		CLK
CKE	BANK(S) ACTIVE	CKE HIGH
CS	NOP	CS
RAS	NOP	RAS
CAS	NOP	CAS
WE	NOP	WE
A0-A9		A0-A9
A10		A10
A11		A11

Don't Care

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100

ISSI®

Mode Register Set Command

(CS, RAS, CAS, WE = LOW)

The IS42S16100 product incorporates a register that defines the device operating mode. This command functions as a data input pin that loads this register from the pins A0 to A11. When power is first applied, the stipulated power-on sequence should be executed and then the IS42S16100 should be initialized by executing a mode register set command.

Note that the mode register set command can be executed only when both banks are in the idle state (i.e. deactivated).

Another command cannot be executed after a mode register set command until after the passage of the period tMCD, which is the period required for mode register set command execution.

Active Command

(CS, RAS = LOW, CAS, WE= HIGH)

The IS42S16100 includes two banks of 4096 rows each. This command selects one of the two banks according to the A11 pin and activates the row selected by the pins A0 to A10.

This command corresponds to the fall of the RAS signal from HIGH to LOW in conventional DRAMs.

Precharge Command

(CS, RAS, WE = LOW, CAS = HIGH)

This command starts precharging the bank selected by pins A10 and A11. When A10 is HIGH, both banks are precharged at the same time. When A10 is LOW, the bank selected by A11 is precharged. After executing this command, the next command for the selected bank(s) is executed after passage of the period tRP, which is the period required for bank precharging.

This command corresponds to the RAS signal from LOW to HIGH in conventional DRAMs

Read Command

(CS, CAS = LOW, RAS, WE = HIGH)

This command selects the bank specified by the A11 pin and starts a burst read operation at the start address specified by pins A0 to A9. Data is output following CAS latency.

The selected bank must be activated before executing this command.

When the A10 pin is HIGH, this command functions as a read with auto-precharge command. After the burst read completes, the bank selected by pin A11 is precharged. When the A10 pin is LOW, the bank selected by the A11 pin remains in the activated state after the burst read completes.

Write Command

(CS, CAS, WE = LOW, RAS = HIGH)

When burst write mode has been selected with the mode register set command, this command selects the bank specified by the A11 pin and starts a burst write operation at the start address specified by pins A0 to A9. This first data must be input to the I/O pins in the cycle in which this command.

The selected bank must be activated before executing this command.

When A10 pin is HIGH, this command functions as a write with auto-precharge command. After the burst write completes, the bank selected by pin A11 is precharged. When the A10 pin is low, the bank selected by the A11 pin remains in the activated state after the burst write completes.

After the input of the last burst write data, the application must wait for the write recovery period (tDPL, tDAL) to elapse according to CAS latency.

Auto-Refresh Command

(CS, RAS, CAS = LOW, WE, CKE = HIGH)

This command executes the auto-refresh operation. The row address and bank to be refreshed are automatically generated during this operation.

Both banks must be placed in the idle state before executing this command.

The stipulated period (tRC) is required for a single refresh operation, and no other commands can be executed during this period.

The device goes to the idle state after the internal refresh operation completes.

This command must be executed at least 4096 times every 128 ms.

This command corresponds to CBR auto-refresh in conventional DRAMs.

12 Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100

ISSI®

Self-Refresh Command

(CS, RAS, CAS, CKE = LOW, WE = HIGH)

This command executes the self-refresh operation. The row address to be refreshed, the bank, and the refresh interval are generated automatically internally during this operation. The self-refresh operation is started by dropping the CKE pin from HIGH to LOW. The self-refresh operation continues as long as the CKE pin remains LOW and there is no need for external control of any other pins. The self-refresh operation is terminated by raising the CKE pin from LOW to HIGH. The next command cannot be executed until the device internal recovery period (tRC) has elapsed. After the self-refresh, since it is impossible to determine the address of the last row to be refreshed, an auto-refresh should immediately be performed for all addresses (4096 cycles).

Both banks must be placed in the idle state before executing this command.

Burst Stop Command

(CS, WE, = LOW, RAS, CAS = HIGH)

The command forcibly terminates burst read and write operations. When this command is executed during a burst read operation, data output stops after the CAS latency period has elapsed.

No Operation

(CS, = LOW, RAS, CAS, WE = HIGH)

This command has no effect on the device.

Device Deselect Command

(CS = HIGH)

This command does not select the device for an object of operation. In other words, it performs no operation with respect to the device.

Power-Down Command

(CKE = LOW)

When both banks are in the idle (inactive) state, or when at least one of the banks is not in the idle (inactive) state, this command can be used to suppress device power dissipation by reducing device internal operations to the absolute minimum. Power-down mode is started by dropping the CKE pin from HIGH to LOW. Power-down mode continues as long as the CKE pin is held low. All pins other than the CKE pin are invalid and none of the other commands can be executed in this mode. The power-down operation is terminated by raising the CKE pin from LOW to HIGH. The next command cannot be executed until the recovery period (tCKA) has elapsed.

Since this command differs from the self-refresh command described above in that the refresh operation is not performed automatically internally, the refresh operation must be performed within the refresh period (tREF). Thus the maximum time that power-down mode can be held is just under the refresh cycle time.

Clock Suspend

(CKE = LOW)

This command can be used to stop the device internal clock temporarily during a read or write cycle. Clock suspend mode is started by dropping the CKE pin from HIGH to LOW. Clock suspend mode continues as long as the CKE pin is held LOW. All input pins other than the CKE pin are invalid and none of the other commands can be executed in this mode. Also note that the device internal state is maintained. Clock suspend mode is terminated by raising the CKE pin from LOW to HIGH, at which point device operation restarts. The next command cannot be executed until the recovery period (tCKA) has elapsed.

Since this command differs from the self-refresh command described above in that the refresh operation is not performed automatically internally, the refresh operation must be performed within the refresh period (tREF). Thus the maximum time that clock suspend mode can be held is just under the refresh cycle time.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100

ISSI®

COMMAND TRUTH TABLE(1,2)

CKE

Symbol

Command

n-1

CS RAS

CAS

WE DQM

A11

A10

A9-A0

I/On

MRS

Mode Register Set(3,4)

OP CODE

REF

Auto-Refresh(5)

HIGH-Z

SREF

Self-Refresh(5,6)

HIGH-Z

PRE

Precharge Selected Bank

PALL

Precharge Both Banks

ACT

Bank Activate(7)

Row

WRIT

Write

Column(18)

WRITA

Write With Auto-Precharge(8)

Column(18)

READ

Read(8)

Column(18)

READA

Read With Auto-Precharge(8)

Column(18)

BST

Burst Stop(9)

NOP

No Operation

DESL

Device Deselect

SBY

Clock Suspend / Standby Mode

ENB

Data Write / Output Enable

Active

MASK

Data Mask / Output Disable

HIGH-Z

DQM TRUTH TABLE(1,2)

CKE

DQM

Symbol

Command

n-1

UPPER

LOWER

ENB

Data Write / Output Enable

MASK

Data Mask / Output Disable

ENBU

Upper Byte Data Write / Output Enable

ENBL

Lower Byte Data Write / Output Enable

MASKU

Upper Byte Data Mask / Output Disable

MASKL

Lower Byte Data Mask / Output Disable

CKE TRUTH TABLE(1,2)

CKE

Symbol

Command

Current State

n-1

RAS

CAS WE

A11 A10 A9-A0

SPND

Start Clock Suspend Mode

Active

—

Clock Suspend

Other States

—

Terminate Clock Suspend Mode

Clock Suspend

REF

Auto-Refresh

Idle

SELF

Start Self-Refresh Mode

Idle

SELFX

Terminate Self-Refresh Mode

Self-Refresh

PDWN

Start Power-Down Mode

Idle

—

Terminate Power-Down Mode

Power-Down

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100							ISSI®
OPERATION COMMAND TABLE(1,2)
Current State	Command	Operation	CS	RAS	CAS	WE	A11	A10	A9-A0

Idle	DESL	No Operation or Power-Down(12)	H	X	X	X	X	X	X
	NOP	No Operation or Power-Down(12)	L	H	H	H	X	X	X
	BST	No Operation or Power-Down	L	H	H	L	X	X	X
	READ / READA	Illegal	L	H	L	H	V	V	V(18)
	WRIT/WRITA	Illegal	L	H	L	L	V	V	V(18)
	ACT	Row Active	L	L	H	H	V	V	V(18)
	PRE/PALL	No Operation	L	L	H	L	V	V	X
	REF/SELF	Auto-Refresh or Self-Refresh(13)	L	L	L	H	X	X	X
	MRS	Mode Register Set	L	L	L	L	OP CODE

Row Active	DESL	No Operation	H	X	X	X	X	X	X
	NOP	No Operation	L	H	H	H	X	X	X
	BST	No Operation	L	H	H	L	X	X	X
	READ/READA	Read Start(17)	L	H	L	H	V	V	V(18)
	WRIT/WRITA	Write Start(17)	L	H	L	L	V	V	V(18)
	ACT	Illegal(10)	L	L	H	H	V	V	V(18)
	PRE/PALL	Precharge(15)	L	L	H	L	V	V	X
	REF/SELF	Illegal	L	L	L	H	X	X	X
	MRS	Illegal	L	L	L	L	OP CODE

Read	DESL	Burst Read Continues, Row Active When Done	H	X	X	X	X	X	X
	NOP	Burst Read Continues, Row Active When Done	L	H	H	H	X	X	X
	BST	Burst Interrupted, Row Active After Interrupt	L	H	H	L	X	X	X
	READ/READA	Burst Interrupted, Read Restart After Interrupt(16)	L	H	L	H	V	V	V(18)
	WRIT/WRITA	Burst Interrupted Write Start After Interrupt(11,16)	L	H	L	L	V	V	V(18)
	ACT	Illegal(10)	L	L	H	H	V	V	V(18)
	PRE/PALL	Burst Read Interrupted, Precharge After Interrupt	L	L	H	L	V	V	X
	REF/SELF	Illegal	L	L	L	H	X	X	X
	MRS	Illegal	L	L	L	L	OP CODE

Write	DESL	Burst Write Continues, Write Recovery When Done	H	X	X	X	X	X	X
	NOP	Burst Write Continues, Write Recovery When Done	L	H	H	H	X	X	X
	BST	Burst Write Interrupted, Row Active After Interrupt	L	H	H	L	X	X	X
	READ/READA	Burst Write Interrupted, Read Start After Interrupt(11,16)	L	H	L	H	V	V	V(18)
	WRIT/WRITA	Burst Write Interrupted, Write Restart After Interrupt(16)	L	H	L	L	V	V	V(18)
	ACT	Illegal(10)	L	L	H	H	V	V	V(18)
	PRE/PALL	Burst Write Interrupted, Precharge After Interrupt	L	L	H	L	V	V	X
	REF/SELF	Illegal	L	L	L	H	X	X	X
	MRS	Illegal	L	L	L	L	OP CODE

Read With	DESL	Burst Read Continues, Precharge When Done	H	X	X	X	X	X	X
Auto-	NOP	Burst Read Continues, Precharge When Done	L	H	H	H	X	X	X
Precharge	BST	Illegal	L	H	H	L	X	X	X
	READ/READA	Illegal	L	H	L	H	V	V	V(18)
	WRIT/WRITA	Illegal	L	H	L	L	V	V	V(18)
	ACT	Illegal(10)	L	L	H	H	V	V	V(18)
	PRE/PALL	Illegal(10)	L	L	H	L	V	V	X
	REF/SELF	Illegal	L	L	L	H	X	X	X
	MRS	Illegal	L	L	L	L	OP CODE


Integrated Silicon Solution, Inc. — 1-800-379-4774									15
Rev. A
09/29/00

IS42S16100							ISSI®
OPERATION COMMAND TABLE(1,2)
Current State	Command	Operation	CS	RAS	CAS	WE	A11	A10	A9-A0

Write With	DESL	Burst Write Continues, Write Recovery And Precharge	H	X	X	X	X	X	X
Auto-Precharge		When Done
	NOP	Burst Write Continues, Write Recovery And Precharge	L	H	H	H	X	X	X
	BST	Illegal	L	H	H	L	X	X	X
	READ/READA	Illegal	L	H	L	H	V	V	V(18)
	WRIT/WRITA	Illegal	L	H	L	L	V	V	V(18)
	ACT	Illegal(10)	L	L	H	H	V	V	V(18)
	PRE/PALL	Illegal(10)	L	L	H	L	V	V	X
	REF/SELF	Illegal	L	L	L	H	X	X	X
	MRS	Illegal	L	L	L	L	OPCODE

Row Precharge	DESL	No Operation, Idle State After tRP Has Elapsed	H	X	X	X	X	X	X
	NOP	No Operation, Idle State After tRP Has Elapsed	L	H	H	H	X	X	X
	BST	No Operation, Idle State After tRP Has Elapsed	L	H	H	L	X	X	X
	READ/READA	Illegal(10)	L	H	L	H	V	V	V(18)
	WRIT/WRITA	Illegal(10)	L	H	L	L	V	V	V(18)
	ACT	Illegal(10)	L	L	H	H	V	V	V(18)
	PRE/PALL	No Operation, Idle State After tRP Has Elapsed(10)	L	L	H	L	V	V	X
	REF/SELF	Illegal	L	L	L	H	X	X	X
	MRS	Illegal	L	L	L	L	OP CODE

Immediately	DESL	No Operation, Row Active After tRCD Has Elapsed	H	X	X	X	X	X	X
Following	NOP	No Operation, Row Active After tRCD Has Elapsed	L	H	H	H	X	X	X
Row Active	BST	No Operation, Row Active After tRCD Has Elapsed	L	H	H	L	X	X	X
	READ/READA	Illegal(10)	L	H	L	H	V	V	V(18)
	WRIT/WRITA	Illegal(10)	L	H	L	L	V	V	V(18)
	ACT	Illegal(10,14)	L	L	H	H	V	V	V(18)
	PRE/PALL	Illegal(10)	L	L	H	L	V	V	X
	REF/SELF	Illegal	L	L	L	H	X	X	X
	MRS	Illegal	L	L	L	L	OP CODE

Write	DESL	No Operation, Row Active After tDPL Has Elapsed	H	X	X	X	X	X	X
Recovery	NOP	No Operation, Row Active After tDPL Has Elapsed	L	H	H	H	X	X	X
	BST	No Operation, Row Active After tDPL Has Elapsed	L	H	H	L	X	X	X
	READ/READA	Read Start	L	H	L	H	V	V	V(18)
	WRIT/WRITA	Write Restart	L	H	L	L	V	V	V(18)
	ACT	Illegal(10)	L	L	H	H	V	V	V(18)
	PRE/PALL	Illegal(10)	L	L	H	L	V	V	X
	REF/SELF	Illegal	L	L	L	H	X	X	X
	MRS	Illegal	L	L	L	L	OP CODE

16 Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100							ISSI®
OPERATION COMMAND TABLE(1,2)
Current State	Command	Operation	CS	RAS	CAS	WE	A11	A10	A9-A0

Write Recovery	DESL	No Operation, Idle State After tDAL Has Elapsed	H	X	X	X	X	X	X
With Auto-	NOP	No Operation, Idle State After tDAL Has Elapsed	L	H	H	H	X	X	X
Precharge	BST	No Operation, Idle State After tDAL Has Elapsed	L	H	H	L	X	X	X
	READ/READA	Illegal(10)	L	H	L	H	V	V	V(18)
	WRIT/WRITA	Illegal(10)	L	H	L	L	V	V	V(18)
	ACT	Illegal(10)	L	L	H	H	V	V	V(18)
	PRE/PALL	Illegal(10)	L	L	H	L	V	V	X
	REF/SELF	Illegal	L	L	L	H	X	X	X
	MRS	Illegal	L	L	L	L	OP CODE

Refresh	DESL	No Operation, Idle State After tRP Has Elapsed	H	X	X	X	X	X	X
	NOP	No Operation, Idle State After tRP Has Elapsed	L	H	H	H	X	X	X
	BST	No Operation, Idle State After tRP Has Elapsed	L	H	H	L	X	X	X
	READ/READA	Illegal	L	H	L	H	V	V	V(18)
	WRIT/WRITA	Illegal	L	H	L	L	V	V	V(18)
	ACT	Illegal	L	L	H	H	V	V	V(18)
	PRE/PALL	Illegal	L	L	H	L	V	V	X
	REF/SELF	Illegal	L	L	L	H	X	X	X
	MRS	Illegal	L	L	L	L	OP CODE
Mode Register	DESL	No Operation, Idle State After tMCD Has Elapsed	H	X	X	X	X	X	X
Set	NOP	No Operation, Idle State After tMCD Has Elapsed	L	H	H	H	X	X	X
	BST	No Operation, Idle State After tMCD Has Elapsed	L	H	H	L	X	X	X
	READ/READA	Illegal	L	H	L	H	V	V	V(18)
	WRIT/WRITA	Illegal	L	H	L	L	V	V	V(18)
	ACT	Illegal	L	L	H	H	V	V	V(18)
	PRE/PALL	Illegal	L	L	H	L	V	V	X
	REF/SELF	Illegal	L	L	L	H	X	X	X
	MRS	Illegal	L	L	L	L	OP CODE

Notes:

1.H: HIGH level input, L: LOW level input, X: HIGH or LOW level input, V: Valid data input

2.All input signals are latched on the rising edge of the CLK signal.

3.Both banks must be placed in the inactive (idle) state in advance.

4.The state of the A0 to A11 pins is loaded into the mode register as an OP code.

5.The row address is generated automatically internally at this time. The I/O pin and the address pin data is ignored.

6.During a self-refresh operation, all pin data (states) other than CKE is ignored.

7.The selected bank must be placed in the inactive (idle) state in advance.

8.The selected bank must be placed in the active state in advance.

9.This command is valid only when the burst length set to full page.

10.This is possible depending on the state of the bank selected by the A11 pin.

11.Time to switch internal busses is required.

12.The IS42S16100 can be switched to power-down mode by dropping the CKE pin LOW when both banks in the idle state. Input pins other than CKE are ignored at this time.

13.The IS42S16100 can be switched to self-refresh mode by dropping the CKE pin LOW when both banks in the idle state. Input pins other than CKE are ignored at this time.

14.Possible if tRRD is satisfied.

15.Illegal if tRAS is not satisfied.

16.The conditions for burst interruption must be observed. Also note that the IS42S16100 will enter the precharged state immediately after the burst operation completes if auto-precharge is selected.

17.Command input becomes possible after the period tRCD has elapsed. Also note that the IS42S16100 will enter the precharged state immediately after the burst operation completes if auto-precharge is selected.

18.A8,A9 = don't care.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100								ISSI®
CKE RELATED COMMAND TRUTH TABLE(1)
		CKE
Current State	Operation	n-1	n	CS	RAS	CAS	WE	A11	A10	A9-A0

Self-Refresh	Undefined	H	X	X	X	X	X	X	X	X
	Self-Refresh Recovery(2)	L	H	H	X	X	X	X	X	X
	Self-Refresh Recovery(2)	L	H	L	H	H	X	X	X	X
	Illegal(2)	L	H	L	H	L	X	X	X	X
	Illegal(2)	L	H	L	L	X	X	X	X	X
	Self-Refresh	L	L	X	X	X	X	X	X	X

Self-Refresh Recovery	Idle State After tRC Has Elapsed	H	H	H	X	X	X	X	X	X
	Idle State After tRC Has Elapsed	H	H	L	H	H	X	X	X	X
	Illegal	H	H	L	H	L	X	X	X	X
	Illegal	H	H	L	L	X	X	X	X	X
	Power-Down on the Next Cycle	H	L	H	X	X	X	X	X	X
	Power-Down on the Next Cycle	H	L	L	H	H	X	X	X	X
	Illegal	H	L	L	H	L	X	X	X	X
	Illegal	H	L	L	L	X	X	X	X	X
	Clock Suspend Termination on the Next Cycle (2)	L	H	X	X	X	X	X	X	X
	Clock Suspend	L	L	X	X	X	X	X	X	X

Power-Down	Undefined	H	X	X	X	X	X	X	X	X
	Power-Down Mode Termination, Idle After	L	H	X	X	X	X	X	X	X
	That Termination(2)
	Power-Down Mode	L	L	X	X	X	X	X	X	X
Both Banks Idle	No Operation	H	H	H	X	X	X	X	X	X
	See the Operation Command Table	H	H	L	H	X	X	X	X	X
	Bank Active Or Precharge	H	H	L	L	H	X	X	X	X
	Auto-Refresh	H	H	L	L	L	H	X	X	X
	Mode Register Set	H	H	L	L	L	L	OP CODE
	See the Operation Command Table	H	L	H	X	X	X	X	X	X
	See the Operation Command Table	H	L	L	H	X	X	X	X	X
	See the Operation Command Table	H	L	L	L	H	X	X	X	X
	Self-Refresh(3)	H	L	L	L	L	H	X	X	X
	See the Operation Command Table	H	L	L	L	L	L	OP CODE
	Power-Down Mode(3)	L	X	X	X	X	X	X	X	X
Other States	See the Operation Command Table	H	H	X	X	X	X	X	X	X
	Clock Suspend on the Next Cycle(4)	H	L	X	X	X	X	X	X	X
	Clock Suspend Termination on the Next Cycle	L	H	X	X	X	X	X	X	X
	Clock Suspend Termination on the Next Cycle	L	L	X	X	X	X	X	X	X

Notes:

1.H: HIGH level input, L: LOW level input, X: HIGH or LOW level input

2.The CLK pin and the other input are reactivated asynchronously by the transition of the CKE level from LOW to HIGH. The minimum setup time (tCKA) required before all commands other than mode termination must be satisfied.

3.Both banks must be set to the inactive (idle) state in advance to switch to power-down mode or self-refresh mode.

4.The input must be command defined in the operation command table.

18 Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100

ISSI®

TWO BANKS OPERATION COMMAND TRUTH TABLE(1,2)

Previous State

Next State

Operation

RAS

CAS

A11 A10 A9-A0

BANK 0

BANK 1

BANK 0

BANK 1

DESL

Any

NOP

Any

BST

R/W/A

I/A

R/W/A

I/A

READ/READA

CA(3)

I/A

R/W/A

I/A

CA(3)

R/W

CA(3)

I/A

R/W/A

I/A

CA(3)

R/W

CA(3)

R/W/A

I/A

CA(3)

R/W

CA(3)

R/W/A

I/A

CA(3)

R/W

WRIT/WRITA

CA(3)

I/A

R/W/A

I/A

CA(3)

R/W

CA(3)

I/A

R/W/A

I/A

CA(3)

R/W

CA(3)

R/W/A

I/A

CA(3)

R/W

CA(3)

R/W/A

I/A

CA(3)

R/W

ACT

Any

PRE/PALL

R/W/A/I

I/A

R/W/A/I

I/A

R/W/A/I

I/A

R/W/A/I

I/A

R/W/A/I

I/A

R/W/A/I

REF

MRS

OPCODE

Notes:

1.H: HIGH level input, L: LOW level input, X: HIGH or LOW level input, RA: Row Address, CA: Column Address

2.The device state symbols are interpreted as follows:

I	Idle (inactive state)
A	Row Active State
R	Read
W	Write
RP	Read With Auto-Precharge
WP	Write With Auto-Precharge
Any	Any State

3. CA: A8,A9 = don't care.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100	ISSI®
SIMPLIFIED STATE TRANSITION DIAGRAM (One Bank Operation)

					SELF
					REFRESH
				SREF entry
				SREF exit
		MODE	MRS	REF	AUTO
		REGISTER		REF	AUTO
		REGISTER		IDLE	REFRESH
		SET			REFRESH
		SET
				CKE_
				CKE
				ACT	IDLE
				ACT	POWER
					POWER
					DOWN
					ACTIVE
					POWER
					DOWN
				CKE_
				CKE
		BST		BANK	BST
		BST		ACTIVE	BST
				ACTIVE
			WRIT	READ
	WRIT					READ
			WRITA	READA
			READ
	CKE_	WRITE			READ	CKE_
	CKE_			WRIT		CKE_
				WRIT
CLOCK	CKE				READA	CKE	CLOCK
CLOCK		WRITA			READA	CKE	CLOCK
SUSPEND		WRITA				SUSPEND
SUSPEND		CKE_	WRITA	READA	CKE_	SUSPEND
			WRITA	READA	CKE_

	CKE	WRITE WITH			READ WITH	CKE
	CKE	WRITE WITH			READ WITH
		AUTO			AUTO
		PRECHARGE		PRE	PRECHARGE
				PRE
			PRE	PRE
POWER APPLIED		POWER ON	PRE	PRE-
POWER APPLIED		POWER ON	CHARGE
			CHARGE
	Automatic transition following the
	completion of command execution.
	Transition due to command input.
20				Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100

ISSI®

Device Initialization At Power-On

(Power-On Sequence)

As is the case with conventional DRAMs, the IS42S16100 product must be initialized by executing a stipulated power-on sequence after power is applied.

After power is applied and VCC and VCCQ reach their stipulated voltages, set and hold the CKE and DQM pins HIGH for 100 µs. Then, execute the precharge command to precharge both bank. Next, execute the auto-refresh command twice or more and define the device operation mode by executing a mode register set command.

The mode register set command can be also set before auto-refresh command.

Mode Register Settings

The mode register set command sets the mode register. When this command is executed, pins A0 to A9, A10, and A11 function as data input pins for setting the register, and this data becomes the device internal OP code. This OP code has four fields as listed in the table below.

Input Pin	Field
A11, A10, A9, A8	Mode Options

A6, A5, A4	CAS Latency
A3	Burst Type

A2, A1, A0	Burst Length

Note that the mode register set command can be executed only when both banks are in the idle (inactive) state. Wait at least two cycles after executing a mode register set command before executing the next command.

CAS Latency

During a read operation, the between the execution of the read command and data output is stipulated as the CAS latency. This period can be set using the mode register set command. The optimal CAS latency is determined by the clock frequency and device speed grade (-10/12). See the "Operating Frequency / Latency Relationships" item for details on the relationship between the clock frequency and the CAS latency. See the table on the next page for details on setting the mode register.

Burst Length

When writing or reading, data can be input or output data continuously. In these operations, an address is input only once and that address is taken as the starting address internally by the device. The device then automatically generates the following address. The burst length field in the mode register stipulates the number of data items input or output in sequence. In the IS42S16100 product, a burst length of 1, 2, 4, 8, or full page can be specified. See the table on the next page for details on setting the mode register.

Burst Type

The burst data order during a read or write operation is stipulated by the burst type, which can be set by the mode register set command. The IS42S16100 product supports sequential mode and interleaved mode burst type settings. See the table on the next page for details on setting the mode register. See the "Burst Length and Column Address Sequence" item for details on I/O data orders in these modes.

Write Mode

Burst write or single write mode is selected by the OP code (A11, A10, A9) of the mode register.

A burst write operation is enabled by setting the OP code (A11, A10, A9) to (0,0,0). A burst write starts on the same cycle as a write command set. The write start address is specified by the column address and bank select address at the write command set cycle.

A single write operation is enabled by setting OP code (A11, A10, A9) to (1,0,0). In a single write operation, data is only written to the column address and bank select address specified by the write command set cycle without regard to the bust length setting.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100																ISSI®
MODE REGISTER
												Address Bus
11	10	9	8	7	6	5	4	3	2	1	0	Address Bus
11	10	9	8	7	6	5	4	3	2	1	0	Mode Register (Mx)

	WRITE MODE					LT MODE		BT		BL
	WRITE MODE					LT MODE		BT		BL


												M2	M1	M0	Sequential	Interleaved

											Burst Length	0	0	0	1	1
												0	0	1	2	2
												0	1	0	4	4
												0	1	1	8	8
												0	1	1	8	8
												1	0	0	Reserved	Reserved
												1	0	1	Reserved	Reserved
												1	1	0	Reserved	Reserved
												1	1	1	Full Page	Reserved

												M3		Type

											Burst Type	0		Sequential
											Burst Type	0		Sequential
												1		Interleaved

												M6	M5	M4	CAS Latency

											Latency Mode	0	0	0	Reserved
												0	0	1	Reserved
												0	1	0	2
												0	1	0	2
												0	1	1	3
												1	0	0	Reserved
												1	0	1	Reserved
												1	1	0	Reserved
												1	1	1	Reserved

M11		M10		M9	M8		M7		Write Mode

X		X		0		0	0		Mode Register Set

X		X		1		0	0		Burst Read & Single Write

0		0		0		0	0		Reserved Test Set

22 Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100					ISSI®
BURST LENGTH AND COLUMN ADDRESS SEQUENCE

	Column Address			Address Sequence
Burst Length	A2	A1	A0	Sequential	Interleaved

2	X	X	0	0-1	0-1
	X	X	1	1-0	1-0

4	X	0	0	0-1-2-3	0-1-2-3
	X	0	1	1-2-3-0	1-0-3-2
	X	1	0	2-3-0-1	2-3-0-1
	X	1	1	3-0-1-2	3-2-1-0
8	0	0	0	0-1-2-3-4-5-6-7	0-1-2-3-4-5-6-7
	0	0	1	1-2-3-4-5-6-7-0	1-0-3-2-5-4-7-6
	0	1	0	2-3-4-5-6-7-0-1	2-3-0-1-6-7-4-5
	0	1	1	3-4-5-6-7-0-1-2	3-2-1-0-7-6-5-4
	1	0	0	4-5-6-7-0-1-2-3	4-5-6-7-0-1-2-3
	1	0	1	5-6-7-0-1-2-3-4	5-4-7-6-1-0-3-2
	1	1	0	6-7-0-1-2-3-4-5	6-7-4-5-2-3-0-1
	1	1	1	7-0-1-2-3-4-5-6	7-6-5-4-3-2-1-0

Full Page	n	n	n	Cn, Cn+1, Cn+2	None
(256)				Cn+3, Cn+4.....
				...Cn-1(Cn+255),
				Cn(Cn+256).....

Notes:

1. The burst length in full page mode is 256.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

IS42S16100				ISSI®
BANK SELECT AND PRECHARGE ADDRESS ALLOCATION

Row	X0	—	Row Address
	X1	—	Row Address
	X2	—	Row Address
	X3	—	Row Address
	X4	—	Row Address
	X5	—	Row Address
	X6	—	Row Address
	X7	—	Row Address
	X8	—	Row Address
	X9	—	Row Address
	X10	0	Precharge of the Selected Bank (Precharge Command) Row Address
		1	Precharge of Both Banks (Precharge Command)	(Active Command)
	X11	0	Bank 0 Selected (Precharge and Active Command)
		1	Bank 1 Selected (Precharge and Active Command)

Column	Y0	—	Column Address
	Y1	—	Column Address
	Y2	—	Column Address
	Y3	—	Column Address
	Y4	—	Column Address
	Y5	—	Column Address
	Y6	—	Column Address
	Y7	—	Column Address
	Y8	—	Don't Care
	Y9	—	Don't Care
	Y10	0	Auto-Precharge - Disabled
		1	Auto-Precharge - Enables
	Y11	0	Bank 0 Selected (Read and Write Commands)
		1	Bank 1 Selected (Read and Write Commands)

24 Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

09/29/00

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