2.4-GHz Bluetooth™ low energy and Proprietary System-on-Chip
Check for Samples: CC2541
1
FEATURES
23
•RF– High-Performance and Low-Power 8051
– 2.4-GHz Bluetooth low energy Compliant
and Proprietary RF System-on-Chip– In-System-Programmable Flash, 128- or
– Supports 250-kbps, 500-kbps, 1-Mbps, 2-
Mbps Data Rates– 8-KB RAM With Retention in All Power
– Excellent Link Budget, Enabling Long-
Range Applications Without External Front– Hardware Debug Support
End
– Programmable Output Power up to 0 dBmAuto-Acknowledgment and Address
– Excellent Receiver Sensitivity (–94 dBm at
1 Mbps), Selectivity, and Blocking– Retention of All Relevant Registers in All
PerformancePower Modes
– Suitable for Systems Targeting Compliance•Peripherals
With Worldwide Radio Frequency
Regulations: ETSI EN 300 328 and EN 300
440 Class 2 (Europe), FCC CFR47 Part 15
(US), and ARIB STD-T66 (Japan)
•Layout
– Few External Components
– Reference Design Provided
– 6-mm × 6-mm QFN-40 Package
– Pin-Compatible With CC2540 (When Not
Using USB or I2C)
•Low Power
– Active-Mode RX Down to: 17.9 mA
– Active-Mode TX (0 dBm): 18.2 mA
– Power Mode 1 (4-µs Wake-Up): 270 µA
– Power Mode 2 (Sleep Timer On): 1 µA
– Power Mode 3 (External Interrupts): 0.5 µA
– Wide Supply-Voltage Range (2 V–3.6 V)
•TPS62730 Compatible Low Power in Active
Mode
– RX Down to: 14.7 mA (3-V supply)
– TX (0 dBm): 14.3 mA (3-V supply)
White space
White space
White space
White space
White space
White space
•Microcontroller
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2Bluetooth is a trademark of Bluetooth SIG, Inc..
3ZigBee is a registered trademark of ZigBee Alliance.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Microcontroller Core With Code Prefetch
256-KB
Modes
– Extensive Baseband Automation, Including
Decoding
– Powerful Five-Channel DMA
– General-Purpose Timers (One 16-Bit, Two
8-Bit)
– IR Generation Circuitry
– 32-kHz Sleep Timer With Capture
– Accurate Digital RSSI Support
– Battery Monitor and Temperature Sensor
– 12-Bit ADC With Eight Channels and
Configurable Resolution
– AES Security Coprocessor
– Two Powerful USARTs With Support for
Several Serial Protocols
– 23 General-Purpose I/O Pins
•30-nA Bypass Mode Current to Support LowPower Modes
•RF Performance Unchanged
•Small Package Allows for Small Solution Size
•CC2541 Controllable
DESCRIPTION
The CC2541 is a power-optimized true system-onchip (SoC) solution for both Bluetooth low energy and
proprietary 2.4-GHz applications. It enables robust
network nodes to be built with low total bill-of-material
costs.TheCC2541combinestheexcellent
performance of a leading RF transceiver with an
industry-standard enhanced 8051 MCU, in-system
programmable flash memory, 8-KB RAM, and many
other powerful supporting features and peripherals.
The CC2541 is highly suited for systems where
ultralow power consumption is required. This is
specified by various operating modes. Short transition
times between operating modes further enable low
power consumption.
The CC2541 is pin-compatible with the CC2540 in
the 6-mm × 6-mm QFN40 package, if the USB is not
used on the CC2540 and the I2C/extra I/O is not used
on the CC2541. Compared to the CC2540, the
CC2541 provides lower RF current consumption. The
CC2541 does not have the USB interface of the
CC2540, and provides lower maximum output power
in TX mode. The CC2541 also adds a HW I2C
interface.
The CC2541 is pin-compatible with the CC2533
RF4CE-optimized IEEE 802.15.4 SoC.
The CC2541 comes in twodifferent versions:
CC2541F128/F256, with 128 KB and 256 KB of flash
memory, respectively.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
over operating free-air temperature range (unless otherwise noted)
MINMAXUNIT
Supply voltageAll supply pins must have the same voltage–0.33.9V
Voltage on any digital pin–0.3VDD + 0.3 ≤ 3.9V
Input RF level10dBm
Storage temperature range–40125°C
All pins, excluding pins 25 and 26, according to human-body
model, JEDEC STD 22, method A114
(2)
ESD
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended OperatingConditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) CAUTION: ESD sesnsitive device. Precautions should be used when handling the device in order to prevent permanent damage.
All pins, according to human-body model, JEDEC STD 22,
method A114
According to charged-device model, JEDEC STD 22, method
C101
2kV
1kV
500V
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MINNOMMAXUNIT
Operating ambient temperature range, T
Operating supply voltage23.6V
A
–4085°C
ELECTRICAL CHARACTERISTICS
Measured on Texas Instruments CC2541 EM reference design with TA= 25°C and VDD = 3 V,
1 Mbps, GFSK, 250-kHz deviation, Bluetooth low energy mode, and 0.1% BER
PARAMETERTEST CONDITIONSMINTYP MAX UNIT
RX mode, standard mode, no peripherals active, low MCU
activity
RX mode, high-gain mode, no peripherals active, low MCU
activity
Peripheral current consumption
(Adds to core current I
peri
peripheral unit activated)
core
for each
Power mode 1. Digital regulator on; 16-MHz RCOSC and 32MHz crystal oscillator off; 32.768-kHz XOSC, POR, BOD and270
sleep timer active; RAM and register retention
Power mode 2. Digital regulator off; 16-MHz RCOSC and 32MHz crystal oscillator off; 32.768-kHz XOSC, POR, and sleep1
timer active; RAM and register retention
Power mode 3. Digital regulator off; no clocks; POR active;
RAM and register retention
Low MCU activity: 32-MHz XOSC running. No radio or
peripherals. Limited flash access, no RAM access.
Frequency error tolerance
Symbol rate errorMaximum packet length. Sensitivity better than –67 dBm, 250 byte
tolerance
(1) Difference between center frequency of the received RF signal and local oscillator frequency
(2) Difference between incoming symbol rate and the internally generated symbol rate
(2)
(2)
(1)
250 byte payload. BER 0.1%
payload. BER 0.1%
±2 MHz offset, 0.1% BER, wanted signal –67 dBm–1
±6 MHz or greater offset, 0.1% BER, wanted signal –67 dBm39
Including both initial tolerance and drift. Sensitivity better than –67 dBm,
Measured on Texas Instruments CC2541 EM reference design with TA= 25°C, VDD = 3 V, fc= 2440 MHz
PARAMETERTEST CONDITIONSMINTYP MAXUNIT
1 Mbps, GFSK, 250-kHz Deviation, Bluetooth low energy Mode, 0.1% BER
Receiver sensitivity
Saturation
(4)
Co-channel rejection
(3)(4)
(4)
In-band blocking rejection
Out-of-band blocking
rejection
Intermodulation
(4)
(4)
Frequency error tolerance
Symbol rate errorMaximum packet length. Sensitivity better than –67 dBm, 250 byte
tolerance
(6)
1 Mbps, GFSK, 160-kHz Deviation, 0.1% BER
Receiver sensitivity
(7)
SaturationBER < 0.1%0dBm
Co-channel rejectionWanted signal 10 dB above sensitivity level–9dB
In-band blocking rejectiondB
Frequency error tolerance
Symbol rate errorMaximum packet length. Sensitivity better than –67 dBm, 250-byte
tolerance
(6)
500 kbps, MSK, 0.1% BER
Receiver sensitivity
(7)
SaturationBER < 0.1%0dBm
Co-channel rejectionWanted signal –67 dBm–5dB
In-band blocking rejection±2-MHz offset, 0.1% BER, wanted signal –67 dBm27dB
Frequency error tolerance–150150kHz
Symbol rate error tolerance–8080ppm
(3) The receiver sensitivity setting is programmable using a TI BLE stack vendor-specific API command. The default value is standard
mode.
(4) Results based on standard-gain mode.
(5) Difference between center frequency of the received RF signal and local oscillator frequency
(6) Difference between incoming symbol rate and the internally generated symbol rate
(7) Results based on high-gain mode.
High-gain mode–94
Standard mode–88
BER < 0.1%5dBm
Wanted signal –67 dBm–6dB
±1 MHz offset, 0.1% BER, wanted signal –67 dBm–2
±2 MHz offset, 0.1% BER, wanted signal –67 dBm26
(4)
±3 MHz offset, 0.1% BER, wanted signal –67 dBm34
>6 MHz offset, 0.1% BER, wanted signal –67 dBm33
Minimum interferer level < 2 GHz (Wanted signal –67 dBm)–21
Minimum interferer level [2 GHz, 3 GHz] (Wanted signal –67 dBm)–25dBm
Minimum interferer level > 3 GHz (Wanted signal –67 dBm)–7
Minimum interferer level–36dBm
Including both initial tolerance and drift. Sensitivity better than -67dBm,
(5)
250 byte payload. BER 0.1%
payload. BER 0.1%
–250250kHz
–8080ppm
–91dBm
±1-MHz offset, 0.1% BER, wanted signal –67 dBm2
±2-MHz offset, 0.1% BER, wanted signal –67 dBm24
±3-MHz offset, 0.1% BER, wanted signal -–67 dBm27
>6-MHz offset, 0.1% BER, wanted signal –67 dBm32
Including both initial tolerance and drift. Sensitivity better than –67 dBm,
(5)
250-byte payload. BER 0.1%
payload. BER 0.1%
–200200kHz
–8080ppm
–99dBm
±1-MHz offset, 0.1% BER, wanted signal –67 dBm20
>2-MHz offset, 0.1% BER, wanted signal –67 dBm28
Including both initial tolerance and drift. Sensitivity better than –67 dBm,
250-byte payload. BER 0.1%
Maximum packet length. Sensitivity better than –67 dBm, 250-byte
Measured on Texas Instruments CC2541 EM reference design with TA= 25°C, VDD = 3 V, fc= 2440 MHz
PARAMETERTEST CONDITIONSMINTYP MAXUNIT
250 kbps, GFSK, 160 kHz Deviation, 0.1% BER
Receiver sensitivity
SaturationBER < 0.1%0dBm
Co-channel rejectionWanted signal -67 dBm–3dB
In-band blocking rejection±2-MHz offset, 0.1% BER, wanted signal –67 dBm28dB
Frequency error tolerance
Symbol rate errorMaximum packet length. Sensitivity better than –67 dBm, 250-byte
tolerance
(10)
250 kbps, MSK, 0.1% BER
Receiver sensitivity
SaturationBER < 0.1%0dBm
Co-channel rejectionWanted signal -67 dBm–5dB
In-band blocking rejection±2-MHz offset, 0.1% BER, wanted signal –67 dBm29dB
Frequency error tolerance–150150kHz
Symbol rate error tolerance–8080ppm
ALL RATES/FORMATS
Spurious emission in RX.
Conducted measurement
Spurious emission in RX.
Conducted measurement
(8) Results based on standard-gain mode.
(9) Difference between center frequency of the received RF signal and local oscillator frequency
(10) Difference between incoming symbol rate and the internally generated symbol rate
(11) Results based on high-gain mode.
(8)
(11)
–98dBm
±1-MHz offset, 0.1% BER, wanted signal –67 dBm23
>2-MHz offset, 0.1% BER, wanted signal –67 dBm29
Including both initial tolerance and drift. Sensitivity better than –67 dBm,
(9)
250-byte payload. BER 0.1%
payload. BER 0.1%
–150150kHz
–8080ppm
–99dBm
±1-MHz offset, 0.1% BER, wanted signal –67 dBm20
>2-MHz offset, 0.1% BER, wanted signal –67 dBm30
Including both initial tolerance and drift. Sensitivity better than –67 dBm,
250-byte payload. BER 0.1%
Maximum packet length. Sensitivity better than –67 dBm, 250-byte
Measured on Texas Instruments CC2541 EM reference design with TA= 25°C, VDD = 3 V and fc= 2440 MHz
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Delivered to a single-ended 50-Ω load through a balun using
Output powerdBm
Programmable output powerDelivered to a single-ended 50-Ω load through a balun using23dB
rangeminimum recommended output power setting
Spurious emission conducted f > 1 GHz–48dBm
measurement
Optimum load impedance70 +j30Ω
maximum recommended output power setting
Delivered to a single-ended 50-Ω load through a balun using
minimum recommended output power setting
f < 1 GHz–52dBm
Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and
EN 300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan)
Differential impedance as seen from the RF port (RF_P and RF_N)
toward the antenna
0
–23
Designs with antenna connectors that require conducted ETSI compliance at 64 MHz should insert an LC
resonator in front of the antenna connector. Use a 1.6-nH inductor in parallel with a 1.8-pF capacitor. Connect
both from the signal trace to a good RF ground.
CURRENT CONSUMPTION WITH TPS62730
Measured on Texas Instruments CC2541 TPA62730 EM reference design with TA= 25°C, VDD = 3 V and fc= 2440 MHz,
1 Mbsp, GFSK, 250-kHz deviation, Bluetooth™ low energy Mode, 1% BER
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
RX mode, standard mode, no peripherals active, low MCU activity, MCU
at 1 MHz
RX mode, high-gain mode, no peripherals active, low MCU activity,
Current consumptionmA
(1) 0.1% BER maps to 30.8% PER
MCU at 1 MHz
TX mode, –20 dBm output power, no peripherals active, low MCU activity,13.1
MCU at 1 MHz
TX mode, 0 dBm output power, no peripherals active, low MCU activity,
MCU at 1 MHz
(1)
14.7
16.7
14.3
32-MHz CRYSTAL OSCILLATOR
Measured on Texas Instruments CC2541 EM reference design with TA= 25°C and VDD = 3 V
PARAMETERTEST CONDITIONSMINTYPMAX UNIT
Crystal frequency32MHz
Crystal frequency accuracy
requirement
ESREquivalent series resistance660Ω
C
Crystal shunt capacitance17pF
0
C
Crystal load capacitance1016pF
L
Start-up time0.25ms
Power-down guard time3ms
(1) Including aging and temperature dependency, as specified by [1]
The crystal oscillator must be in power down for a guard
time before it is used again. This requirement is valid for
all modes of operation. The need for power-down guard
time can vary with crystal type and load.
Product Folder Links: CC2541
–4040ppm
CC2541
www.ti.com
SWRS110D –JANUARY 2012–REVISED JUNE 2013
32.768-kHz CRYSTAL OSCILLATOR
Measured on Texas Instruments CC2541 EM reference design with TA= 25°C and VDD = 3 V
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Crystal frequency32.768kHz
Crystal frequency accuracy requirement
ESREquivalent series resistance40130kΩ
C
Crystal shunt capacitance0.92pF
0
C
Crystal load capacitance1216pF
L
Start-up time0.4s
(1) Including aging and temperature dependency, as specified by [1]
(1)
–4040ppm
32-kHz RC OSCILLATOR
Measured on Texas Instruments CC2541 EM reference design with TA= 25°C and VDD = 3 V.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Calibrated frequency
Frequency accuracy after calibration±0.2%
Temperature coefficient
Supply-voltage coefficient
Calibration time
(1) The calibrated 32-kHz RC oscillator frequency is the 32-MHz XTAL frequency divided by 977.
(2) Frequency drift when temperature changes after calibration
(3) Frequency drift when supply voltage changes after calibration
(4) When the 32-kHz RC oscillator is enabled, it is calibrated when a switch from the 16-MHz RC oscillator to the 32-MHz crystal oscillator
is performed while SLEEPCMD.OSC32K_CALDIS is set to 0.
(1)
(2)
(3)
(4)
32.753kHz
0.4%/°C
3%/V
2ms
16-MHz RC OSCILLATOR
Measured on Texas Instruments CC2541 EM reference design with TA= 25°C and VDD = 3 V
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Frequency
Uncalibrated frequency accuracy±18%
Calibrated frequency accuracy±0.6%
Start-up time10μs
Initial calibration time
(1) The calibrated 16-MHz RC oscillator frequency is the 32-MHz XTAL frequency divided by 2.
(2) When the 16-MHz RC oscillator is enabled, it is calibrated when a switch from the 16-MHz RC oscillator to the 32-MHz crystal oscillator
(1) Assuming CC2541 EM reference design. Other RF designs give an offset from the reported value.
(1)
(1)
(1)
(1)
(1)
(1)
Reduced gain by AGC algorithm64
High gain by AGC algorithm64
Reduced gain by AGC algorithm79
High gain by AGC algorithm99
±6dB
Standard mode64
High-gain mode64
Standard mode98
High-gain mode107
±3dB
dB
dBm
dB
dBm
FREQUENCY SYNTHESIZER CHARACTERISTICS
Measured on Texas Instruments CC2541 EM reference design with TA= 25°C, VDD = 3 V and fc= 2440 MHz
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
At ±1-MHz offset from carrier–109
Phase noise, unmodulated carrierAt ±3-MHz offset from carrier–112dBc/Hz
At ±5-MHz offset from carrier–119
ANALOG TEMPERATURE SENSOR
Measured on Texas Instruments CC2541 EM reference design with TA= 25°C and VDD = 3 V
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Output148012-bit
Temperature coefficient4.5/ 1°C
Voltage coefficient10.1 V
Initial accuracy without calibration±10°C
Accuracy using 1-point calibration±5°C
Current consumption when enabled0.5mA
Measured using integrated ADC, internal band-gap voltage
reference, and maximum resolution
COMPARATOR CHARACTERISTICS
TA= 25°C, VDD = 3 V. All measurement results are obtained using the CC2541 reference designs, post-calibration.
PARAMETERTEST CONDITIONSMINTYP MAX UNIT
Common-mode maximum voltageVDDV
Common-mode minimum voltage–0.3
Input offset voltage1mV
Offset vs temperature16µV/°C
Offset vs operating voltage4mV/V
Supply current230nA
Hysteresis0.15mV
Input voltageVDD is voltage on AVDD5 pin0VDDV
External reference voltageVDD is voltage on AVDD5 pin0VDDV
External reference voltage differential VDD is voltage on AVDD5 pin0VDDV
Input resistance, signalSimulated using 4-MHz clock speed197kΩ
Full-scale signal
(1)
ENOB
Effective number of bitsbits
Useful power bandwidth7-bit setting, both single and differential0–20kHz