ST330C..L Series
2222222222222
12
D-320
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current T
J
= TJ max, anode voltage ≤ 80% V
DRM
Gate current 1A, dig/dt = 1A/µs
V
d
= 0.67% V
DRM, TJ
= 25°C
I
TM
= 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
dv/dt
= 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST330C..L Units Conditions
Switching
1000 A/µs
t
d
Typical delay time 1.0
t
q
Typical turn-off time 100
µs
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
, max. repetitive V
RSM
, maximum non- I
DRM/IRRM
max.
Type number Code peak and off-state voltage repetitive peak voltage
@ TJ = TJ max
V V mA
04 400 500
08 800 900
ST330C..L 12 1200 1300 50
14 1400 1500
16 1600 1700
I
T(AV)
Max. average on-state current 650 (314) A 180° conduction, half sine wave
@ Heatsink temperature 55 (75) °C double side (single side) cooled
I
T(RMS)
Max. RMS on-state current 1230 DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle 9000 t = 10ms No voltage
non-repetitive surge current 9420 A t = 8.3ms reapplied
7570 t = 10ms 100% V
RRM
7920 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing 405 t = 10ms No voltage Initial TJ = TJ max.
370 t = 8.3ms reapplied
287 t = 10ms 100% V
RRM
262 t = 8.3ms reapplied
I
2
√t Maximum I2√t for fusing 4050 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage 1.90 V Ipk= 1730A, TJ = TJ max, tp = 10ms sine pulse
I
H
Maximum holding current 600
I
L
Typical latching current 1000
0.91 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
0.57 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
0.57 (I > π x I
T(AV)
),TJ = TJ max.
Parameter ST330C..L Units Conditions
0.93 (I > π x I
T(AV)
),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA T
J
= 25°C, anode supply 12V resistive load