International Rectifier SD103N08S15MSC, SD103N08S15PBC, SD103N08S15PC, SD103N08S15PSC, SD103N08S20MBC Datasheet

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DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

Bulletin I2062/A

SD103N/R SERIES

FAST RECOVERY DIODES

Features

High power FAST recovery diode series 1.0 to 2.0 µs recovery time

High voltage ratings up to 2500V

High current capability

Optimized turn on and turn off characteristics Low forward recovery

Fast and soft reverse recovery Compression bonded encapsulation Stud version JEDEC DO-30 Maximum junction temperature 125°C

Stud Version

110A

Typical Applications

Snubber diode for GTO

High voltage free-wheeling diode

Fast recovery rectifier applications

Major Ratings and Characteristics

Parameters

SD103N/R

Units

 

 

 

 

 

 

IF(AV)

 

 

 

110

A

 

 

@ TC

85

°C

 

 

 

 

 

 

IF(RMS)

 

 

 

173

A

IFSM

 

@ 50Hz

3570

A

 

 

@ 60Hz

3730

A

 

 

 

 

 

 

I2t

 

@ 50Hz

64

KA2s

 

 

 

 

 

 

 

 

@ 60Hz

58

KA2s

 

 

 

 

 

VRRM range

400 to 2500

V

 

 

 

 

trr

range

1.0 to 2.0

µs

 

 

@ TJ

25

°C

 

 

 

 

 

 

TJ

 

 

 

- 40 to 125

°C

case style DO-205AC (DO-30)

International Rectifier SD103N08S15MSC, SD103N08S15PBC, SD103N08S15PC, SD103N08S15PSC, SD103N08S20MBC Datasheet

SD103N/R Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

 

 

Voltage

VRRM max. repetitive

VRSM , maximum non-

IRRM max.

Type number

Code

peak and off-state voltage

repetitive peak voltage

TJ = 125°C

 

 

 

V

V

mA

 

 

04

400

500

 

SD103N/R..S10

08

800

900

 

 

 

 

 

 

 

 

 

10

1000

1100

 

 

 

 

 

 

 

 

 

12

1200

1300

35

 

 

 

 

 

SD103N/R..S15

14

1400

1500

 

 

 

 

 

 

 

 

 

16

1600

1700

 

 

 

 

 

 

 

SD103N/R..S20

20

2000

2100

 

 

 

 

 

25

2500

2600

 

 

 

 

 

 

 

 

 

 

Forward Conduction

 

Parameter

SD103N/R

Units

Conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IF(AV)

Max. average forward current

110

A

180° conduction, half sine wave.

 

 

 

 

 

@ Case temperature

85

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IF(RMS)

Max. RMS current

173

A

DC @ 75°C case temperature

 

 

 

 

IFSM

Max. peak, one-cycle

3570

 

t = 10ms

 

No voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

non-repetitive forward current

3730

A

t = 8.3ms

 

reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3000

t = 10ms

 

100% VRRM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3140

 

t = 8.3ms

 

reapplied

 

Sinusoidal half wave,

 

 

 

 

 

 

 

 

 

 

 

 

 

I2t

Maximum I2t for fusing

64

 

t = 10ms

 

No voltage

 

Initial T

J

= T

J

max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

58

KA2s

t = 8.3ms

 

reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

45

t = 10ms

 

100% VRRM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

41

 

t = 8.3ms

 

reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I2Öt

Maximum I2Öt for fusing

636

KA2Ös

t = 0.1 to 10ms, no voltage reapplied

 

 

VF(TO)1 Low level of threshold voltage

1.36

V

(16.7% x p x IF(AV) < I < p x IF(AV)), TJ = TJ max.

VF(TO)2

High level of threshold voltage

1.94

(I > p x IF(AV)), TJ = TJ max.

 

 

 

 

 

 

 

 

 

 

 

rf1

Low level of forward slope resistance

2.55

mW

(16.7% x p x IF(AV) < I < p x IF(AV)), TJ = TJ max.

rf2

High level of forward slope resistance

1.11

(I > p x IF(AV)), TJ = TJ max.

 

 

 

 

 

 

 

 

 

 

 

VFM

Max. forward voltage

2.23

V

Ipk= 345A, TJ = 25°C, tp = 400 µs square pulse

Recovery Characteristics

 

o

Test conditions

 

Max. values @ TJ = 125°C

Code

TJ = 25 C

 

 

 

 

 

 

 

typical trr

Ipk

di/dt

Vr

trr

Qrr

Irr

 

@ 25% IRRM

Square Pulse

 

 

@ 25% IRRM

 

 

 

(ms)

(A)

(A/ms)

(V)

(ms)

(mC)

(A)

S10

1.0

 

 

 

1.6

21

27

S15

1.5

350

25

-30

2.3

61

37

S20

2.0

 

 

 

3.2

75

39

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