FEATURES
•High Current Transfer Ratio, IF=1 mA IL215AT, 20% Minimum
IL216AT, 50% Minimum IL217AT, 100% Minimum
•Isolation Voltage, 2500 VACRMS
•Electrical Specifications Similar to Standard 6 Pin Coupler
•Industry Standard SOIC-8 Surface Mountable Package
•Standard Lead Spacing, .05"
•Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A)
•Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
•Underwriters Lab File #E52744 (Code Letter P)
DESCRIPTION
The IL215AT/216AT/217AT is an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL215AT/ 216AT/217AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating throughholes requirements, this package conforms to standards for surface mounted devices.
The high CTR at low input current is designed for low power consumption requirements such as CMOS microprocessor interfaces.
Maximum Ratings
Emitter |
|
|
Peak Reverse Voltage ............................................ |
6.0 |
V |
Continuous Forward Current ............................... |
60 mA |
|
Power Dissipation at 25°C .................................. |
90 mW |
|
Derate Linearly from 25°C ............................ |
1.2 mW/°C |
|
Detector |
|
|
Collector-Emitter Breakdown Voltage ..................... |
30 |
V |
Emitter-Collector Breakdown Voltage ....................... |
7 |
V |
Collector-Base Breakdown Voltage ........................ |
70 |
V |
Power Dissipation ............................................. |
150 mW |
|
Derate Linearly from 25°C ............................ |
2.0 mW/°C |
|
Package |
|
|
Total Package Dissipation at 25°C Ambient |
|
|
(LED + Detector) ........................................... |
280 mW |
|
Derate Linearly from 25°C ............................ |
3.3 mW/°C |
|
Storage Temperature .......................... |
–55°C to +150°C |
|
Operating Temperature ...................... |
–55°C to +100°C |
|
Soldering Time at 260°C .................................... |
10 sec. |
|
IL215AT/216AT/217AT
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
Package Dimensions in Inches (mm) |
|
|
||
.120±.005 |
|
Anode 1 |
8 NC |
|
(3.05±.13) |
|
C .154±.005 Cathode 2 |
7 Base |
|
.240 |
|
L (3.91±.13) |
NC 3 |
6 Collector |
(6.10) |
|
|
NC 4 |
5 Emitter |
|
|
|
||
Pin One ID |
.016 (.41) |
|
7° |
|
|
|
|
||
|
.192±.005 |
.015±.002 |
40° |
.058±.005 |
(4.88±.13) |
(.38±.05) |
|
(1.49±.13) |
|
|
|
|||
.004 (.10) |
|
|
|
.125±.005 |
.008 (.20) |
|
.008 (.20) |
|
|
|
5°max. |
(3.18±.13) |
||
|
|
|
|
|
|
.050 (1.27) |
R.010 |
Lead |
|
|
typ. |
.020±.004 |
(.25) max. |
Coplanarity |
|
.021 (.53) |
(.15±.10) |
|
±.0015 (.04) |
|
|
2 plcs. |
|
max. |
|
|
TOLERANCE: ±.005 (unless otherwise noted) |
||
Characteristics (TA=25°C)
|
Symbol Min. |
Typ. |
Max. Unit |
Condition |
||
Emitter |
|
|
|
|
|
|
Forward Voltage |
VF |
|
1.0 |
1.5 |
V |
IF=1 mA |
Reverse Current |
IR |
|
0.1 |
100 |
µA |
VR=6.0 V |
Capacitance |
CO |
|
25 |
|
pF |
VR=0 |
Detector |
|
|
|
|
|
|
Breakdown Voltage |
|
|
|
|
|
|
Collector-Emitter |
BVCEO |
30 |
|
|
V |
IC=10 µA |
Emitter-Collector |
BVECO |
7 |
|
|
V |
IE=10 µA |
Collector-Emitter |
|
|
|
|
|
VCE=10 V, |
Dark Current |
ICEOdark |
|
5 |
50 |
nA |
IF =0 |
Collector-Emitter |
|
|
|
|
|
|
Capacitance |
CCE |
|
10 |
|
pF |
VCE=0 |
Package |
|
|
|
|
|
|
DC Current Transfer |
CTRDC |
|
|
|
% |
IF=1 mA |
IL215AT |
|
20 |
50 |
|
|
VCE=5 V |
|
|
|
|
|||
IL216AT |
|
50 |
80 |
|
|
|
IL217AT |
|
100 |
130 |
|
|
|
Collector-Emitter |
|
|
|
|
|
IC=0.1 mA, |
Saturation Voltage |
VCE sat |
|
|
0.4 |
|
IF=1 mA |
Isolation Test |
|
|
|
|
|
|
Voltage |
VIO |
2500 |
|
|
VACRMS |
|
Capacitance, |
|
|
|
|
|
|
Input to Output |
CIO |
|
0.5 |
|
pF |
|
Resistance, |
|
|
|
|
|
|
Input to Output |
RIO |
|
100 |
|
GΩ |
|
Switching Time |
tON, tOFF |
|
3.0 |
|
µs |
IC=2 mA, |
|
|
|
|
|
|
RE=100 Ω, |
|
|
|
|
|
|
VCE=10 V |
Specifications subject |
to change. |
|
|
|
|
|
Semiconductor Group |
4–7 |
10.95 |
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