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FEATURES |
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•High Current Transfer Ratio IL211AT—20% Minimum IL212AT—50% Minimum IL213AT—100% Minimum
•Isolation Voltage, 2500 VACRMS
•Electrical Specifications Similar to Standard 6 Pin Coupler
•Industry Standard SOIC-8 Surface Mountable Package
•Standard Lead Spacing, .05"
•Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A)
•Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
•Underwriters Lab File #E52744 (Code Letter P)
DESCRIPTION
The IL211AT/212AT/213AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL211AT//212AT/ 213AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.
A choice of 20, 50, and 100% minimum CTR at IF=10 mA makes these optocouplers suitable for a variety of different applications.
Maximum Ratings |
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Emitter |
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Peak Reverse Voltage ....................................... |
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6.0 V |
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Continuous Forward Current .......................... |
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60 mA |
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Power Dissipation at 25°C ............................. |
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90 mW |
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Derate Linearly from 25°C ....................... |
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1.2 mW/°C |
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Detector |
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Collector-Emitter |
Breakdown |
Voltage |
................ 30 V |
Emitter-Collector |
Breakdown |
Voltage |
.................. 7 V |
Collector-Base Breakdown Voltage ................... |
70 V |
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Power Dissipation ........................................ |
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150 mW |
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Derate Linearly from 25°C ....................... |
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2.0 mW/°C |
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Package |
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Total Package Dissipation at 25°C Ambient |
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(LED + Detector) ...................................... |
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280 mW |
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Derate Linearly from 25°C ....................... |
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3.3 mW/°C |
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Storage Temperature ..................... |
–55°C to +150°C |
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Operating Temperature ................. |
–55°C to +100°C |
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Soldering Time at 260°C ............................... |
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10 sec. |
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IL211AT/IL212AT/IL213AT
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
Package Dimensions in Inches (mm)
.120±.005 |
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Anode 1 |
8 |
NC |
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(3.05±.13) |
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C |
.154±.005 Cathode 2 |
7 |
Base |
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.240 |
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L (3.91±.13) |
NC 3 |
6 |
Collector |
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(6.10) |
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NC 4 |
5 |
Emitter |
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Pin One ID |
.016 (.41) |
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7° |
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.192±.005 |
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.015±.002 |
40° |
.058±.005 |
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(4.88±.13) |
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(.38±.05) |
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(1.49±.13) |
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.004 (.10) |
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.125±.005 |
.008 (.20) |
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.008 (.20) |
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5°max. |
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(3.18±.13) |
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.050 (1.27) |
R.010 |
Lead |
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typ. |
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.020±.004 |
(.25) max. |
Coplanarity |
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.021 (.53) |
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(.15±.10) |
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±.0015 (.04) |
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2 plcs. |
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max. |
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TOLERANCE: ±.005 (unless otherwise noted)
Characteristics (TA=25°C)
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Symbol Min. Typ. |
Max. Unit |
Condition |
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Emitter |
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Forward |
Voltage |
VF |
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1.3 |
1.5 |
V |
IF=10 mA |
Reverse |
Current |
IR |
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0.1 |
100 |
µA |
VR=6.0 V |
Capacitance |
CO |
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25 |
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pF |
VR=0 |
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Detector |
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Breakdown Voltage |
BVCEO |
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30 |
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V |
IC=10 µA |
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BVECO |
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7 |
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V |
IE=10 µA |
Collector-Emitter |
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VCE=10 V, |
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Dark Current |
ICEOdark |
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5 |
50 |
nA |
IF=0 |
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Collector-Emitter |
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Capacitance |
CCE |
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10 |
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pF |
VCE=0 |
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Package |
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DC Current Transfer |
CTRDC |
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% |
IF=10 mA |
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IL211AT |
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20 |
50 |
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VCE=5 V |
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IL212AT |
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50 |
80 |
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IL213AT |
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100 |
130 |
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Collector-Emitter |
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Saturation Voltage |
VCE sat |
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0.4 |
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IF=10 mA, |
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IC=2.0 mA |
Isolation |
Test |
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Voltage |
VIO |
2500 |
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VACRMS |
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Capacitance, |
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Input to Output |
CIO |
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0.5 |
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pF |
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Resistance, |
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Input to Output |
RIO |
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100 |
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GΩ |
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Switching Time |
tON, tOFF |
3.0 |
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µs |
IC=2 mA, |
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RE=100 Ω, |
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VCE=10 V |
Specifications subject |
to change. |
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Semiconductor Group |
4–4 |
10.95 |
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