IL213A
Dimensions in inches (mm)
(
FEATURES
• High Current Transfer Ratio
IL211A—20% Minimum
IL212A—50% Minimum
IL213A—100% Minimum
• Isolation V oltage, 2500 VA C
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL211A/212A/213A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor . Signal information, including a
DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL211A//212A/213A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100% minimum CTR at
I
=10 mA makes these optocouplers suitable for a
F
variety of different applications.
Maximum Ratings
Emitter
Peak Reverse Voltage.....................................6.0 V
Continuous Forward Current.........................60 mA
Power Dissipation at 25 °
Derate Linearly from 25 °
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................7 V
Collector-Base Breakdown Voltage..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25 °
Package
Total Package Dissipation at 25 ° C Ambient
(LED + Detector) ....................................280 mW
Derate Linearly from 25 °
Storage Temperature ...................–55 °
Operating Temperature ...............–55 °
Soldering Time at 260 °
IL211A/212A/213A
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
NEW
RMS
C............................90 mW
C......................1.2 mW/ ° C
C2.0 mW/ ° C
C......................3.3 mW/ ° C
C to +150 ° C
C to +100 ° C
C............................. 10 sec.
.120±.005
(3.05±.13)
.240
6.10)
Pin One ID
.192±.005
(4.88±.13)
.004 (.10)
.008 (.20)
.021 (.53)
Characteristics
Emitter
Forward Voltage V
Reverse Current I
Capacitance C
Detector
Breakdown Voltage B
Dark Current,
Collector-Emitter
Capacitance,
Collector-Emitter
Package
DC Current Transfer
Ratio
IL211A
IL212A
IL213A
Saturation Voltage,
Collector-Emitter
Isolation Test
Voltage
Capacitance,
Input toOutput
Resistance,
Input to Output
Switching Time t
5–1
( T
A
.154±.005
C
L
(3.91±.13)
.016 (.41)
.015±.002
.008 (.20)
.050 (1.27)
typ.
.020±.004
(.15±.10)
=25 ° C)
Symbol Min. Typ. Max. Unit Condition
F
R
O
VCEO
B
VECO
I
CEOdark
C
CE
CTR
DC
20
50
100
V
CEsat
V
IO
C
IO
R
IO
,t
on
2500 VAC
off
Anode
1
Cathode
(.38±.05)
2 plcs.
1.3 1.5 V I
0.1 100 µ AV
25 pF V
30
7
550nA V
10 pF V
50
80
130
0.5 pF
100 G Ω
3.0
2
NC
3
NC
4
40°
5° max.
R.010
(.25) max.
0.4 I
8
NC
7
Base
6
Collector
5
Emitter
7°
.058±.005
(1.49±.13)
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015 (.04)
max.
V
V
%I
RMS
µ sI
=10 mA
F
=6.0 V
R
=0
R
I
=10 µ A
C
I
=10 µ A
E
=10 V
CE
=0
I
F
=0
CE
=10 mA,
F
V
=5 V
CE
=10 mA,
F
I
=2.0 mA
C
=2 mA,
C
R
=100 Ω ,
E
V
=10 V
CE
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