Siemens CFY35-23, CFY35-20 Datasheet

5 (1)
Siemens CFY35-23, CFY35-20 Datasheet

GaAs FET

CFY 35

________________________________________________________________________________________________________

D a t a s h e e t

*Low noise

*High gain

*For low-noise front end amplifiers

* For DBS down converters

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Type

Marking

Ordering code

Pin Configuration

Package 1)

 

 

(tape and reel)

1

2

3

4

 

 

 

 

 

 

 

 

 

 

CFY 35-20

NA

Q62702-F1393

S

D

 

S

G

MW-4

CFY 35-23

NB

Q62702-F1394

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum ratings

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current

Channel temperature

Storage temperature range

Total power dissipation (TS < 53°C) 2)

Symbol

Value

Unit

VDS

5

V

VDG

6

V

VGS

-4 ... 0

V

ID

60

mA

TCh

150

°C

Tstg

-40...+150

°C

Ptot

180

mW

Thermal resistance

 

 

 

Channel-soldering point 2)

RthChS

540

K/W

1)Dimensions see chapter Package Outlines

2)TS is measured on the source 1 lead at the soldering point to the PCB.

Siemens Aktiengesellschaft

pg. 1/4

13.02.1996

 

 

HL EH PD 21

GaAs FET

CFY 35

________________________________________________________________________________________________________

Electrical characteristics at TA = 25°C, unless otherwise specified

Characteristics

 

Symbol

min

typ

max

Unit

 

 

 

 

 

 

Drain-source saturation current

I

 

 

 

mA

VDS = 2.5

V,

VGS = 0 V

 

DSS

10

25

45

 

 

 

 

 

 

 

 

 

 

 

Pinch-off voltage

 

V

 

 

 

V

V = 2.5

V

I

= 1 mA

 

GS(P)

-0.2

-1.2

-2.5

 

 

 

 

DS

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Transconductance

 

g

 

 

 

mS

V = 2.5

V

I

= 10 mA

 

m

20

30

-

 

 

 

 

DS

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate leakage current

 

I

 

 

 

µA

V = 2.5

V

I

= 10 mA

 

G

-

0.1

2

 

 

 

 

DS

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Noise figure

 

 

F

 

 

 

dB

V = 2.5

V

I

= 10 mA

f = 12 GHz

 

 

 

 

 

DS

 

D

 

CFY 35-20

 

-

1.9

2.0

 

 

 

 

 

 

 

 

 

 

 

CFY 35-23

 

-

2.2

2.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Associated gain

 

G

 

 

 

dB

 

 

 

 

 

a

 

 

 

 

V = 2.5

V

I = 10 mA

f = 12 GHz

 

8

8.5

-

 

DS

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical Common Source Noise Parameters

 

I

 

= 10 mA

V

 

= 2.5 V

 

Z = 50 Ω

 

 

 

D

 

 

DS

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f

Fmin

 

Ga

Γopt

 

Rn

rn

N

 

F50Ω

G(F50 Ω)

GHz

dB

 

dB

MAG

ANG

 

Ω

-

 

dB

dB

2

0.60

 

17.6

0.82

32

 

35

0.7

0.08

 

2.35

12.9

4

0.83

 

14.2

0.73

65

 

25

0.5

0.11

 

2.30

11.2

6

1.10

 

11.8

0.65

105

 

14

0.28

0.14

 

2.35

9.5

8

1.38

 

10.5

0.60

146

 

5.5

0.11

0.19

 

2.55

7.8

10

1.64

 

9.4

0.58

-177

 

3

0.06

0.22

 

2.80

6.5

12

1.90

 

8.5

0.61

-139

 

10

0.2

0.28

 

3.50

4.9

14

2.15

 

7.9

0.62

-110

 

26

0.52

0.33

 

3.95

3.8

Siemens Aktiengesellschaft

pg. 2/4

13.02.1996

 

 

HL EH PD 21

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