Siemens CFY25-23, CFY25-20, CFY25-17 Datasheet

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Siemens CFY25-23, CFY25-20, CFY25-17 Datasheet

GaAs FET

CFY 25

Low noise

High gain

For front-end amplifiers

lon-implanted planar structure

All gold metallization

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type

Marking

Ordering Code

 

Pin Configuration

Package1)

 

 

(tape and reel)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

2

 

3

 

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CFY 25-17

C 5

Q62703-F106

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Micro-X

 

D

 

 

 

S

 

 

 

G

S

CFY 25-20

C 6

Q62703-F107

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CFY 25-23

C 7

Q62703-F108

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Ratings

Parameter

Symbol

Values

Unit

 

 

 

 

Drain-source voltage

VDS

5

V

 

 

 

 

Drain-gate voltage

VDG

7

 

 

 

 

 

Gate-source voltage

VGS

– 5 … + 0

 

 

 

 

 

Drain current

ID

80

mA

 

 

 

 

Total power dissipation, TS 56 ˚C2)

Ptot

250

mW

Channel temperature

Tch

150

˚C

 

 

 

 

Storage temperature range

Tstg

– 65 … + 150

 

 

 

 

 

Thermal Resistance

 

 

 

 

 

 

 

Channel - soldering point2)

Rth chS

375

K/W

1)For detailed information see chapter Package Outlines.

2)TS is measured on the source lead at the soldering point to the pcb.

Semiconductor Group

1

07.94

CFY 25

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

 

Symbol

 

Values

 

Unit

 

 

 

 

 

 

 

 

 

 

min.

typ.

max.

 

 

 

 

 

 

 

 

Drain-source saturation current

 

IDSS

15

30

60

mA

VDS = 3 V, VGS = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

Pinch-off voltage

 

Vp

– 0.3

– 1.0

– 3.0

V

ID = 1 mA, VDS = 3 V

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate leakage current

 

IG

0.1

2

μA

ID = 15 mA, VDS = 3 V

 

 

 

 

 

 

 

 

 

 

 

 

 

Transconductance

 

gm

30

40

mS

ID = 15 mA, VDS = 3 V

 

 

 

 

 

 

 

 

 

 

 

 

 

Noise figure

 

F

 

 

 

dB

IDS = 15 mA, VDS = 3 V, f = 12 GHz

CFY 25-17

 

1.6

1.7

 

 

CFY 25-20

 

1.9

2.0

 

 

CFY 25-23

 

2.2

2.3

 

 

 

 

 

 

 

 

Associated gain

 

Ga

 

 

 

 

IDS = 15 mA, VDS = 3 V, f = 12 GHz

CFY 25-17

 

9

9.5

 

 

CFY 25-20

 

8.5

9

 

 

CFY 25-23

 

8.5

9

 

 

 

 

 

 

 

 

Semiconductor Group

2

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