GaAs FET |
CFY 25 |
●Low noise
●High gain
●For front-end amplifiers
●lon-implanted planar structure
●All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type |
Marking |
Ordering Code |
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Pin Configuration |
Package1) |
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(tape and reel) |
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CFY 25-17 |
C 5 |
Q62703-F106 |
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Micro-X |
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D |
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S |
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G |
S |
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CFY 25-20 |
C 6 |
Q62703-F107 |
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CFY 25-23 |
C 7 |
Q62703-F108 |
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Maximum Ratings
Parameter |
Symbol |
Values |
Unit |
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Drain-source voltage |
VDS |
5 |
V |
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Drain-gate voltage |
VDG |
7 |
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Gate-source voltage |
VGS |
– 5 … + 0 |
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Drain current |
ID |
80 |
mA |
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Total power dissipation, TS ≤ 56 ˚C2) |
Ptot |
250 |
mW |
Channel temperature |
Tch |
150 |
˚C |
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Storage temperature range |
Tstg |
– 65 … + 150 |
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Thermal Resistance |
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Channel - soldering point2) |
Rth chS |
375 |
K/W |
1)For detailed information see chapter Package Outlines.
2)TS is measured on the source lead at the soldering point to the pcb.
Semiconductor Group |
1 |
07.94 |
CFY 25
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Drain-source saturation current |
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IDSS |
15 |
30 |
60 |
mA |
VDS = 3 V, VGS = 0 |
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Pinch-off voltage |
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Vp |
– 0.3 |
– 1.0 |
– 3.0 |
V |
ID = 1 mA, VDS = 3 V |
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Gate leakage current |
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IG |
– |
0.1 |
2 |
μA |
ID = 15 mA, VDS = 3 V |
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Transconductance |
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gm |
30 |
40 |
– |
mS |
ID = 15 mA, VDS = 3 V |
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Noise figure |
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F |
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dB |
IDS = 15 mA, VDS = 3 V, f = 12 GHz |
CFY 25-17 |
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– |
1.6 |
1.7 |
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CFY 25-20 |
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– |
1.9 |
2.0 |
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CFY 25-23 |
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– |
2.2 |
2.3 |
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Associated gain |
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Ga |
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IDS = 15 mA, VDS = 3 V, f = 12 GHz |
CFY 25-17 |
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9 |
9.5 |
– |
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CFY 25-20 |
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8.5 |
9 |
– |
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CFY 25-23 |
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8.5 |
9 |
– |
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Semiconductor Group |
2 |