BAR63-06
BAR 63...
Semiconductor Group 1 Edition A01, 23.02.95
Type Marking Ordering code
(tape and reel)
Pin configuration
1 2 3
Package
1)
BAR 63 G3 Q62702-A1036 A - C SOT-23
BAR 63-04 G4 Q62702-A1037 A C C/A
BAR 63-05 G5 Q62702-A1038 A A C/C
BAR 63-06 G6 Q62702-A1039 C C A/A
Maximum ratings
Parameter Symbol BAR 63 Unit
Reverse voltage
V
R 50 V
Forward current
I
F
100 mA
Total Power dissipation T
S
≤ 80°C
BAR 63-04,-05,-06 T
S
≤ 55°C
P
tot
250
250
mW
Operating temperature range
T
op
-55 +150°C °C
Storage temperature range
T
stg
-55...+150°C °C
Thermal resistance
Junction-ambient
1)
BAR63
BAR 63-04,-05,-06
R
th JA
≤ 450
≤ 540
K/W
Junction-soldering point
BAR64
BAR63-04,-05,-06
R
th JS
≤ 280
≤ 380
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon PIN Diode
l
PIN diode for high speed switching of RF signals
l
Low forward resistance
l
Very low capacitance
l
For frequencies up to 3 GHz
BAR 63...
Semiconductor Group 2 Edition A01, 23.02.95
Electrical characteristics
at
T
A
= 25 °C, unless otherwise specified.
Parameter Symbol Value Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
R
= 5 µA
V
(BR)
50 - -
V
Reverse leakage
V
R
= 20 V
I
R
--50
nA
Forward voltage
I
F
= 100 mA
V
F
- 0.95 1.2
V
Diode capacitance
V
R
= 0 V,
f
= 100 MHz
C
T
- 0.3 -
pF
Diode capacitance
V
R
= 5 V,
f
= 1 MHz
C
T
- 0.21 0.3
pF
Forward resistance
I
F
= 5 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
r
f
-
-
1.2
1
2
-
Ω
Charge carrier lifetime
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
τ
s
-75-
ns
Series inductance
L
s
- 1.4 - nH
Forward current
I
F
=
f
(
T
A
*T
S
)
BAR63
Forward current
I
F
=
f
(
T
A
*T
S
)
per each Diode BAR63-04,-05,-06
T
T
A
S
I
F
mA
T
T
A
S
T
T
A
S
I
F
T
T
A
S
mA
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