FEATURES
•Very High Current Transfer Ratio, 500% Min.
•High Isolation Resistance, 1011 Ω Typical
•Standard Plastic DIP Package
•Underwriters Lab File #E52744
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D E VDE Approvals #0884 (Available with |
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Option 1) |
DESCRIPTION |
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The 4N32 and 4N33 are optically coupled isolators with a Gallium Arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields.
Maximum Ratings
Emitter |
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Peak Reverse Voltage ........................................ |
3 V |
Continuous Forward Current ......................... |
60 mA |
Power Dissipation at 25°C.......................... |
100 mW |
Derate Linearly from 55°C.................... |
1.33 mW/°C |
Detector
Collector-Emitter Breakdown Voltage,
BVCEO .......................................................... |
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30 V |
Emitter-Base Breakdown Voltage, |
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BVEBO ............................................................. |
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8V |
Collector-Base Breakdown Voltage, |
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BVCBO .......................................................... |
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50 V |
Emiter-Collector Breakdown Voltage, |
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BVECO ............................................................ |
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5 V |
Collector (load) Current............................... |
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125 mA |
Power Dissipation at 25°C Ambient ........... |
150 mW |
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Derate Linearly from 25°C...................... |
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2.0 mW/°C |
Package |
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Total Dissipation at 25°C Ambient |
............. |
250 mW |
Derate Linearly from 25°C...................... |
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3.3 mW/°C |
Isolation Test Voltage......................... |
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5300 VACRMS |
Between Emitter and Detector, |
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Standard Climate: 23°C/50%RH, |
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DIN 50014 |
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Leakage Path ........................................ |
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7 mm min. |
Air Path................................................... |
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7 mm min. |
Isolation Resitance |
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≥1012 Ω |
VIO=500 V/25°C ...................................... |
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VIO=500 V/100°C .................................... |
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≥1011 Ω |
Storage Temperature ................... |
–55°C to +150°C |
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Operating Temperature ............... |
–55°C to +100°C |
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Lead Soldering Time at 260°C .................... |
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10 sec. |
4N32/4N33
PHOTODARLINGTON OPTOCOUPLER
Dimensions in inches (mm)
3 |
2 |
1 |
.248 (6.30) |
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.256 (6.50) |
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4 |
5 |
6 |
.335 (8.50) |
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.343 (8.70) |
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Pin One ID.
Anode |
1 |
6 |
Base |
Cathode |
2 |
5 |
Collector |
NC |
3 |
4 |
Emitter |
.039 |
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.300 (7.62) |
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typ. |
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(1.00) |
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min. |
.130 (3.30) |
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.150 (3.81) |
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4° |
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18°typ. |
.110 (2.79) |
typ. |
.020 (.051) min. |
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.010 (.25) |
.150 (3.81) |
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.031 (0.80) |
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.018 (0.45) |
.014 (.35) |
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.035 (0.90) |
.300 (7.62) |
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.022 (0.55) |
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.100 (2.54) typ. |
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.347 (8.82) |
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Electrical Characteristics (TA=25°C)
Parameter |
Min. |
Typ. |
Max. |
Unit |
Condition |
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Emitter |
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Forward Voltage |
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1.25 |
1.5 |
V |
IF=50 mA |
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Reverse Current |
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0.1 |
100 |
µA |
VR=3.0 V |
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Capacitance |
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25 |
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pF |
VR=0 V |
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Detector |
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BVCEO* |
30 |
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V |
IC=100 µA, IF=0 |
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BVCBO* |
50 |
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V |
IC=100 µA, IF=0 |
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BVEBO* |
8 |
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V |
IC=100 µA, IF=0 |
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BVECO* |
5 |
10 |
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V |
IE=100 µA, IF=0 |
ICEO |
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1.0 |
100 |
nA |
VCE=10 V, IF=0 |
HFE |
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13K |
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IC=0.5 mA |
Package |
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Current Transfer Ratio |
500 |
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% |
IF=10 mA, |
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VCE=10 V |
VCEsat |
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1.0 |
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V |
IC=2 mA, |
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IF=8 mA |
Coupling Capacitance |
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1.5 |
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pF |
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Turn On Time |
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5 |
µs |
VCC=10 V, |
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IC=50 mA |
Turn Off Time |
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100 |
µs |
IF=200mA, |
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RL=180 Ω |
*Indicates JEDEC registered values |
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5–1 |
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