INFINEON BAR64-02L, BAR64-02V, BAR64-03W, BAR64-04, BAR64-04T User Manual
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BAR64...
Silicon PIN Diode
High voltage current controlled RF resistor for RF attenuator and switches
Frequency range above 1 MHz up to 6 GHz
Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.17 pF)
Low forward resistance (typ. 2.1 @ 10 mA)
Very low signal distortion
BAR64-02L |
BAR64-04 |
BAR64-05 |
BAR64-06 |
BAR64-07 |
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BAR64-02V |
BAR64-04T |
BAR64-05W |
BAR64-06W |
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BAR64-03W |
BAR64-04W |
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Type |
Package |
Configuration |
LS(nH) |
Marking |
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BAR64-02L * |
TSLP-2-1 |
single, leadless |
0.4 |
MM |
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BAR64-02V |
SC79 |
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single |
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0.6 |
O |
BAR64-03W |
SOD323 |
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single |
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1.8 |
2 blue |
BAR64-04 |
SOT23 |
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series |
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1.8 |
PPs |
BAR64-04T |
SC75 |
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series |
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1.2 |
PPs |
BAR64-04W |
SOT323 |
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series |
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1.4 |
PPs |
BAR64-05 |
SOT23 |
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common cathode |
1.8 |
PRs |
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BAR64-05W |
SOT323 |
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common cathode |
1.4 |
PRs |
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BAR64-06 |
SOT23 |
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common anode |
1.8 |
PSs |
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BAR64-06W |
SOD323 |
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common anode |
1.4 |
PSs |
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BAR64-07 |
SOT143 |
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parallel pair |
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2 |
PTs |
* Preliminary Data |
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1 |
Feb-14-2003 |
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BAR64... |
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Maximum Ratings at TA = 25°C, unless otherwise specified |
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Parameter |
Symbol |
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Value |
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Unit |
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Diode reverse voltage |
VR |
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150 |
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V |
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Forward current |
IF |
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100 |
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mA |
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Total power dissipation |
Ptot |
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mW |
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BAR64-02L, TS ≤ 135 °C |
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250 |
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BAR64-02V, TS ≤ 125 °C |
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250 |
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BAR64-03W, BAR64-07, TS ≤ 25 °C |
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250 |
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BAR64-04, -05, -06, TS ≤ 65 °C |
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250 |
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BAR64-04T, TS ≤ 109 °C |
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250 |
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BAR64-04W, -05W, -06W, TS ≤ 115 °C |
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250 |
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Junction temperature |
Tj |
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150 |
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°C |
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Operating temperature range |
Top |
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-55 ... 125 |
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Storage temperature |
Tstg |
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-55 ... 150 |
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Thermal Resistance |
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Parameter |
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Unit |
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Junction - soldering point1) |
R |
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thJS |
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BAR64-02L |
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≤ 60 |
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BAR64-02V, -04W, -05W, -06W |
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≤ 140 |
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BAR64-03W |
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≤ 370 |
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BAR64-04, -05, -06 |
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≤ 340 |
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BAR64-04T |
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≤ 165 |
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BAR64-07 |
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≤ 290 |
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Electrical Characteristics at TA = 25°C, unless otherwise specified |
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Parameter |
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min. |
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typ. |
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max. |
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DC Characteristics |
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Breakdown voltage |
V(BR) |
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150 |
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- |
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V |
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I(BR) = 5 µA |
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Forward voltage |
VF |
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- |
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1.1 |
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IF = 50 mA |
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1For calculation of RthJA please refer to Application Note Thermal Resistance
2 |
Feb-14-2003 |
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BAR64... |
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Electrical Characteristics at TA = 25°C, unless otherwise specified |
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Parameter |
Symbol |
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Values |
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Unit |
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min. |
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typ. |
max. |
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AC Characteristics |
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Diode capacitance |
CT |
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pF |
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VR = 20 V, f = 1 MHz |
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- |
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0.23 |
0.35 |
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VR = 0 V, f = 100 MHz |
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- |
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0.3 |
- |
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VR = 0 V, f = 1...1.8 GHz, BAR64-02L |
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- |
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0.13 |
- |
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VR = 0 V, f = 1...1.8 GHz, all other |
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- |
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0.17 |
- |
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Reverse parallel resistance |
RP |
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k |
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VR = 0 V, f = 100 MHz |
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- |
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10 |
- |
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VR = 0 V, f = 1 GHz |
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- |
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4 |
- |
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VR = 0 V, f = 1.8 GHz |
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- |
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3 |
- |
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Forward resistance |
rf |
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IF = 1 mA, f = 100 MHz |
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- |
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12.5 |
20 |
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IF = 10 mA, f = 100 MHz |
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- |
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2.1 |
2.8 |
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IF = 100 mA, f = 100 MHz |
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0.85 |
1.35 |
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Charge carrier life time |
rr |
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- |
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1550 |
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IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, |
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RL = 100 |
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I-region width |
WI |
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50 |
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µm |
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Insertion loss1) |
|S |
|2 |
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dB |
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21 |
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IF = 3 mA, f = 1.8 GHz |
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- |
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-0.32 |
- |
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IF = 5 mA, f = 1.8 GHz |
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- |
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-0.23 |
- |
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IF = 10 mA, f = 1.8 GHz |
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- |
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-0.16 |
- |
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Isolation1) |
|S |
|2 |
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21 |
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VR = 0 V, f = 0.9 GHz |
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- |
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-22 |
- |
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VR = 0 V, f = 1.8 GHz |
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- |
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-17 |
- |
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VR = 0 V, f = 2.45 GHz |
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-14.5 |
- |
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VR = 0 V, f = 5.6 GHz |
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- |
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-8.5 |
- |
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1BAR64-02L in series configuration, Z = 50
3 |
Feb-14-2003 |
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