ICSI IS62LV256-70UI, IS62LV256-45UI, IS62LV256-45N, IS62LV256-45JI, IS62LV256-70TI Datasheet

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ICSI IS62LV256-70UI, IS62LV256-45UI, IS62LV256-45N, IS62LV256-45JI, IS62LV256-70TI Datasheet

IS62LV256

IS62LV256

32K x 8 LOW VOLTAGE STATIC RAM

FEATURES

DESCRIPTION

• Access time: 45, 70, 100 ns

The ICSI IS62LV256 is a very high-speed, low power,

• Low active power: 70 mW

32,768-word by 8-bit static RAM. It is fabricated using ICSI's

high-performance CMOS double-metal technology.

• Low standby power

 

— 45 µW CMOS standby

When CE is HIGH (deselected), the device assumes a standby

• Fully static operation: no clock or refresh

mode at which the power dissipation is reduced to

10 µW (typical) with CMOS input levels.

required

 

• TTL compatible inputs and outputs

Easy memory expansion is provided by using an active LOW

• Single 3.3V power supply

Chip Enable (CE) input and an active LOW Output Enable (OE)

input. The active LOW Write Enable (WE) controls both writing

 

 

and reading of the memory.

 

The IS62LV256 is pin compatible with other 32K x 8 SRAMs

 

in 300mil DIP and SOJ, 330mil SOP, and 8*13.4mm TSOP-1

 

packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A14

DECODER

 

256 X 1024

 

MEMORY ARRAY

 

 

 

 

 

 

 

VCC

GND

I/O

I/O0-I/O7 DATA COLUMN I/O

CIRCUIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

CONTROL

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

CIRCUIT

 

 

 

 

 

 

 

 

 

WE

 

 

 

 

 

 

 

 

 

 

 

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.

Integrated Circuit Solution Inc.

1

SR006-0B

 

IS62LV256

PIN CONFIGURATION

 

 

PIN CONFIGURATION

 

 

 

 

 

28-Pin DIP, SOJ and SOP

 

 

8x13.4mm TSOP-1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A14

 

1

28

 

 

VCC

 

 

 

 

 

 

22

21

 

A10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

A12

2

27

 

 

WE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

26

 

 

A13

 

A11

23

 

CE

 

A7

3

 

 

 

 

 

 

 

 

 

19

 

I/O7

 

A6

 

 

25

 

 

A8

 

 

 

A9

24

 

 

 

4

 

 

 

 

 

 

 

 

 

18

 

I/O6

 

 

 

 

A8

25

 

 

A5

 

 

24

 

 

A9

 

 

 

 

 

 

 

 

 

A13

 

26

17

 

I/O5

 

 

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

27

16

 

I/O4

 

A4

 

6

23

 

 

A11

 

 

WE

 

 

 

 

A3

 

 

22

 

 

 

 

 

VCC

 

28

15

 

I/O3

 

 

7

 

 

OE

 

 

 

 

 

 

 

 

 

A2

 

8

21

 

 

A10

 

A14

 

1

14

 

GND

 

 

 

 

A12

 

2

13

 

I/O2

 

 

 

 

 

 

 

 

 

 

 

 

 

A1

9

20

 

 

CE

 

 

 

A7

 

3

12

 

I/O1

 

A0

 

10

19

 

 

I/O7

 

 

 

 

 

 

 

 

 

 

 

 

A6

 

4

11

 

I/O0

 

 

 

 

 

 

 

I/O0

 

11

18

 

 

I/O6

 

 

 

 

 

 

 

 

 

 

 

 

A5

 

5

10

 

A0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I/O1

 

17

 

 

I/O5

 

 

 

A4

 

6

9

 

A1

 

 

12

 

 

 

 

 

 

 

 

I/O2

 

 

16

 

 

I/O4

 

 

 

A3

 

7

8

 

A2

 

 

13

 

 

 

 

 

 

 

 

 

 

 

 

GND

 

15

 

 

I/O3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

14

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PIN DESCRIPTIONS

A0-A14

Address Inputs

CE

Chip Enable Input

 

 

OE

Output Enable Input

 

 

WE

Write Enable Input

 

 

I/O0-I/O7

Input/Output

 

 

Vcc

Power

 

 

GND

Ground

 

 

TRUTH TABLE

Mode

WE

CE

OE

I/O Operation

Vcc Current

Not Selected

X

H

X

High-Z

ISB1, ISB2

(Power-down)

 

 

 

 

 

Output Disabled

H

L

H

High-Z

ICC1, ICC2

 

 

 

 

 

 

Read

H

L

L

DOUT

ICC1, ICC2

 

 

 

 

 

 

Write

L

L

X

DIN

ICC1, ICC2

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.5 to +4.6

V

 

 

 

 

TBIAS

Temperature Under Bias

–55 to +125

°C

 

 

 

 

TSTG

Storage Temperature

–65 to +150

°C

 

 

 

 

PT

Power Dissipation

0.5

W

 

 

 

 

IOUT

DC Output Current (LOW)

20

mA

 

 

 

 

Notes:

1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2

Integrated Circuit Solution Inc.

 

SR006-0B

IS62LV256

OPERATING RANGE

Range

Ambient Temperature

VCC

Commercial

0°C to +70°C

3.3V ± 5%

Industrial

–40°C to +85°C

3.3V ± 5%

 

 

 

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol

Parameter

Test Conditions

 

Min.

Max.

Unit

VOH

Output HIGH Voltage

VCC = Min., IOH = –1.0 mA

 

2.4

V

 

 

 

 

 

 

 

VOL

Output LOW Voltage

VCC = Min., IOL = 2.1 mA

 

0.4

V

 

 

 

 

 

 

 

VIH

Input HIGH Voltage

 

 

2.2

VCC + 0.3

V

 

 

 

 

 

 

 

VIL

Input LOW Voltage(1)

 

 

–0.3

0.8

V

 

 

 

 

 

 

 

ILI

Input Leakage

GND < VIN < VCC

Com.

–2

2

µA

 

 

 

Ind.

–5

5

 

 

 

 

 

 

 

 

ILO

Output Leakage

GND < VOUT < VCC, Outputs Disabled

Com.

–2

2

µA

 

 

 

Ind.

–5

5

 

Notes:

1.VIL = –3.0V for pulse width less than 10 ns.

2.Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.

POWER SUPPLY CHARACTERISTICS(1)

(Over Operating Range)

 

 

 

 

 

 

 

 

 

-45 ns

-70 ns

-100 ns

 

Symbol

Parameter

Test Conditions

 

Min.

Max.

Min.

Max.

Min.

Max.

Unit

ICC1

Vcc Operating

VCC = Max., CE = VIL

Com.

20

20

20

mA

 

Supply Current

IOUT = 0 mA, f = 0

Ind.

30

30

30

 

 

 

 

 

 

 

 

 

 

 

 

ICC2

Vcc Dynamic Operating

VCC = Max., CE = VIL

Com.

35

30

30

mA

 

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

45

40

40

 

 

 

 

 

 

 

 

 

 

 

 

ISB1

TTL Standby Current

VCC = Max.,

Com.

2

2

2

mA

 

(TTL Inputs)

VIN = VIH or VIL

Ind.

5

5

5

 

 

 

CE > VIH, f = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB2

CMOS Standby

VCC = Max.,

Com.

90

90

90

µA

 

Current (CMOS Inputs)

CE > VCC – 0.2V,

Ind.

200

200

200

 

VIN > VCC – 0.2V, or

VIN < 0.2V, f = 0

Notes:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

CAPACITANCE(1,2)

 

 

 

Symbol

Parameter

Conditions

Max.

Unit

 

 

 

 

 

CIN

Input Capacitance

VIN = 0V

6

pF

 

 

 

 

 

COUT

Output Capacitance

VOUT = 0V

5

pF

 

 

 

 

 

Notes:

 

 

 

 

1.Tested initially and after any design or process changes that may affect these parameters.

2.Test conditions: TA = 25°C, f = 1 MHz, Vcc =3.3V.

Integrated Circuit Solution Inc.

3

SR006-0B

 

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