IS62LV12816L
IS62LV12816LL
IS62LV12816LL
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
FEATURES
•High-speed access times: 55, 70, 100 ns
•CMOS low power operation
--120 mW (typical) operating
--6 µW (typical) CMOS standby
•TTL compatible interface levels
•Single 2.7V-3.6V Vcc power supply
•Fully static operation: no clock or refresh required
•Three state outputs
•Data control for upper and lower bytes
•Industrial temperature available
•Available in the 44-pin TSOP-2 and 48-pin 6*8mm TF-BGA
DESCRIPTION
The 1+51 IS62LV12816L and IS62LV12816LL are high-speed, 2.097,152-bit static RAMs organized as 131,072 words by 16 bits. They are fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CE is HIGH (deselected) or when CE is low and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using Chip Enable Output and Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62LV12816L and IS62LV12816LL are packaged in the JEDEC standare 44-pin 400mil TSOP-2 and 48-pin 6*8mm TF-BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A16 |
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DECODER |
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128K x 16 |
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MEMORY ARRAY |
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VCC |
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GND |
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I/O0-I/O7 |
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I/O |
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Lower Byte |
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COLUMN I/O |
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DATA |
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I/O8-I/O15 |
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CIRCUIT |
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Upper Byte |
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CE |
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OE |
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CONTROL |
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WE |
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CIRCUIT |
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UB |
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LB |
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ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc. |
1 |
SR020-0C
IS62LV12816L
IS62LV12816LL
PIN CONFIGURATIONS
44-Pin TSOP-2 48-Pin TF-BGA
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44 |
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A5 |
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A4 |
1 |
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A3 |
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2 |
43 |
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A6 |
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A2 |
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3 |
42 |
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A7 |
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A1 |
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4 |
41 |
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OE |
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A0 |
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5 |
40 |
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UB |
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CE |
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6 |
39 |
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LB |
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I/O0 |
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7 |
38 |
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I/O15 |
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I/O1 |
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8 |
37 |
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I/O14 |
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I/O2 |
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9 |
36 |
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I/O13 |
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I/O3 |
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10 |
35 |
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I/O12 |
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Vcc |
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11 |
34 |
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GND |
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GND |
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33 |
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Vcc |
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12 |
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I/O4 |
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13 |
32 |
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I/O11 |
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I/O5 |
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14 |
31 |
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I/O10 |
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I/O6 |
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15 |
30 |
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I/O9 |
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I/O7 |
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16 |
29 |
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I/O8 |
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17 |
28 |
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NC |
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WE |
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A16 |
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18 |
27 |
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A8 |
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A15 |
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26 |
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A9 |
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A14 |
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20 |
25 |
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A10 |
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A13 |
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24 |
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A11 |
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A12 |
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23 |
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NC |
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1 |
2 |
3 |
4 |
5 |
6 |
A |
LB |
OE |
A0 |
A1 |
A2 |
N/C |
B |
I/O8 |
UB |
A3 |
A4 |
CE |
I/O0 |
C |
I/O9 |
I/O10 |
A5 |
A6 |
I/O1 |
I/O2 |
D |
GND |
I/O11 |
NC |
A7 |
I/O3 |
Vcc |
E |
Vcc |
I/O12 |
NC |
A16 |
I/O4 |
GND |
F |
I/O14 |
I/O13 |
A14 |
A15 |
I/O5 |
I/O6 |
G |
I/O15 |
NC |
A12 |
A13 |
WE |
I/O7 |
H |
NC |
A8 |
A9 |
A10 |
A11 |
NC |
PIN DESCRIPTIONS
A0-A16 |
Address Inputs |
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I/O0-I/O15 |
Data Input/Output |
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CE |
Chip Enable Input |
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OE |
Output Enable Input |
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WE |
Write Enable Input |
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LB |
Lower-byte Control (l/O0-I/O7) |
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UB |
Upper-byte Control (l/O8-I/O15) |
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NC |
No Connection |
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Vcc |
Power |
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GND |
Ground |
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TRUTH TABLE
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I/O PIN |
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Mode |
WE |
CE |
OE |
LB |
UB |
I/O0/-I/O7 |
I/O8-I/O15 |
Vcc Current |
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Not Selected |
X |
H |
X |
X |
X |
High-Z |
High-Z |
ISB , ISB |
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L |
X |
H |
H |
High-Z |
High-Z |
ISB , ISB |
Output Disabled |
H |
L |
H |
X |
X |
High-Z |
High-Z |
ICC |
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X |
L |
X |
H |
H |
High-Z |
High-Z |
ISB |
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Read |
H |
L |
L |
L |
H |
DOUT |
High-Z |
ICC |
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H |
L |
L |
H |
L |
High-Z |
DOUT |
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H |
L |
L |
L |
L |
DOUT |
DOUT |
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Write |
L |
L |
X |
L |
H |
DIN |
High-Z |
ICC |
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L |
L |
X |
H |
L |
High-Z |
DIN |
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L |
L |
X |
L |
L |
DIN |
DIN |
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2 |
Integrated Circuit Solution Inc. |
SR020-0C
IS62LV12816L
IS62LV12816LL
OPERATING RANGE
Range |
Ambient Temperature |
VCC |
Commercial |
0°C to +70°C |
2.7V - 3.6V |
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Industrial |
–40°C to +85°C |
2.7V - 3.6V |
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ABSOLUTE MAXIMUM RATINGS(1)
Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
–0.5 to Vcc + 0.5 |
V |
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TBIAS |
Temperature Under Bias |
–40 to +85 |
°C |
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VCC |
Vcc related to GND |
–0.3 to +4.0 |
V |
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TSTG |
Storage Temperature |
–65 to +150 |
°C |
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PT |
Power Dissipation |
1.0 |
W |
Notes:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Unit |
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VOH |
Output HIGH Voltage |
VCC = Min., IOH = –1 mA |
2.0 |
— |
V |
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VOL |
Output LOW Voltage |
VCC = Min., IOL = 2.1 mA |
— |
0.4 |
V |
VIH |
Input HIGH Voltage |
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2.2 |
VCC + 0.2 |
V |
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VIL |
Input LOW Voltage |
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–0.2 |
0.4 |
V |
ILI |
Input Leakage |
GND ≤ VIN ≤ VCC |
–1 |
1 |
µA |
ILO |
Output Leakage |
GND ≤ VOUT ≤ VCC, OUTPUTS DISABLED |
–1 |
1 |
µA |
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Notes:
1. VIL(min.) = –2.0V for pulse width less than 10 ns.
CAPACITANCE(1)
Symbol |
Parameter |
Conditions |
Max. |
Unit |
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CIN |
Input Capacitance |
VIN = 0V |
6 |
pF |
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COUT |
Output Capacitance |
VOUT = 0V |
8 |
pF |
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Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Circuit Solution Inc. |
3 |
SR020-0C