ICSI IS61LV2568-8TI, IS61LV2568-8KI, IS61LV2568-8K, IS61LV2568-15TI, IS61LV2568-15T Datasheet

IS61LV2568

256K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

•High-speed access times:

— 8, 10, 12 and 15 ns

•High-preformance, lower-power CMOS process

•Multiple center power and ground pins for greater noise immunity

•Easy memory expansion with CE and OE options

•CE power-down

•CMOS power: 540 mW @ 10 ns 36 mW standby mode

•TTL compatible inputs and outputs

DESCRIPTION

The 1+51 IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit COMS static RAM. The IS61LV2568 is fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low power consumotion devices.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 36 mW (max.) with CMOS input levels.

The IS61LV2568 operates from a single 3.3V power supply and all inputs are TTL-compatible.

•Single 3.3V + 10% power supply

•Packages available:

—36-pin 400mil SOJ

—44-pin TSOP-2

The IS61LV2568 is available in 36-pin, 400mil SOJ and 44-pin TSOP-2 package.

FUNCTIONAL BLOCK DIAGRAM

A0-A17	DECODER		256K X 8
			MEMORY ARRAY

VCC

GND

I/O

I/O0-I/O7 DATA COLUMN I/O

CIRCUIT

CE

CONTROL

OE CIRCUIT

WE

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution, Inc.

Integrated Circuit Solution, Inc.

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SR026-0C

IS61LV2568

PIN CONFIGURATION												PIN CONFIGURATION
36-Pin SOJ												44-Pin TSOP-2
		A4			1	36		NC					NC					1	44		NC
		A3			2	35		A5					NC					2	43		NC
		A2				34		A6						A4				3	42		NC
					3
						33		A7						A3				4	41		A5
		A1		4										A2				5	40		A6
						32		A8
		A0			5									A1				6	39		A7
		CE			6	31		OE						A0				7	38		A8
																			37
I/O0					7	30		I/O7					CE					8				OE
						29		I/O6				I/O0						9	36		I/O7
I/O1				8
												I/O1						10	35		I/O6
Vcc					9	28		GND				Vcc						11	34		GND
GND					10	27		Vcc				GND						12	33		Vcc
I/O2					11	26		I/O5				I/O2						13	32		I/O5
												I/O3						14	31		I/O4
I/O3					12	25		I/O4											30		A9
												WE						15
						24		A9
WE					13							A17						16	29		A10
						23		A10				A16						17	28		A11
A17				14								A15						18	27		A12
A16					15	22		A11
												A14						19	26		NC
A15					16	21		A12				A13						20	25		NC
A14					17	20		NC					NC					21	24		NC
													NC					22	23		NC
A13				18		19		NC

PIN DESCRIPTIONS

A0-A17	Address Inputs
CE	Chip Enable Input
OE	Output Enable Input
WE	Write Enable Input
I/O0-I/O7	Input/Output
Vcc	Power
GND	Ground
NC	No Connection

TRUTH TABLE

Mode	WE	CE	OE	I/O Operation	Vcc Current
Not Selected	X	H	X	High-Z	ISB , ISB
(Power-down)
Output Disabled	H	L	H	High-Z	ICC
Read	H	L	L	DOUT	ICC
Write	L	L	X	DIN	ICC

ABSOLUTE MAXIMUM RATINGS(1)

Symbol	Parameter		Value	Unit
VCC	Power Supply Voltage Relative to GND		–0.5 to +4.6	V
VTERM	Terminal Voltage with Respect to GND		–0.5 to Vcc + 0.5	V
TBIAS	Temperature Under Bias	Com.	–10 to +85	°C
		Ind.	–45 to +90
TSTG	Storage Temperature		–65 to +150	°C
PD	Power Dissipation		1	W
IOUT	DC Output Current		±20	mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2	Integrated Circuit Solution, Inc.
	SR026-0C

IS61LV2568

OPERATING RANGE

Range	Ambient Temperature	VCC
Commercial	0°C to +70°C	3.3V + 10%
Industrial	–40°C to +85°C	3.3V + 10%

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol	Parameter	Test Conditions			Min.	Max.	Unit
VOH	Output HIGH Voltage	VCC = Min., IOH = –4.0 mA			2.4	—	V
VOL	Output LOW Voltage	VCC = Min., IOL = 8.0 mA			—	0.4	V
VIH	Input HIGH Voltage				2.0	VCC + 0.3	V
VIL	Input LOW Voltage				–0.3	0.8	V
ILI	Input Leakage	GND ≤	VIN ≤ VCC	Com.	–1	1	µA
				Ind.	–5	5
ILO	Output Leakage	GND ≤	VOUT ≤ VCC, Outputs Disabled	Com.	–1	1	µA
				Ind.	–5	5

Notes:

1.VIL (min.) = –0.3V (DC); VIL (min.) = –2.0V (pulse width ≤ 2.0 ns).

VIH (max.) = VCC + 0.3V (DC); VIH (max.) = Vcc + 2.0V (pulse width ≤ 2.0 ns).

2.The Vcc operating range for 8 ns is 3.3V +10%, -5%.

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

				-8 ns		-10 ns		-12 ns		-15 ns
Sym.	Parameter	Test Conditions		Min.	Max.	Min.	Max.	Min.	Max.	Min.	Max.	Unit
ICC	Vcc Dynamic Operating	VCC = Max., CE = VIL	Com.	—	170	—	150	—	140	—	130	mA
	Supply Current	IOUT = 0 mA, f = fMAX	Ind.	—	180	—	160	—	150	—	140
ISB	TTL Standby Current	VCC = Max.,	Com.	—	30	—	30	—	30	—	30	mA
	(TTL Inputs)	VIN = VIH or VIL	Ind.	—	40	—	40	—	40	—	40
		CE ≥ VIH, f = 0
ISB	CMOS Standby	VCC = Max.,	Com.	—	10	—	10	—	10	—	10	mA
	Current (CMOS Inputs)	CE ≤ VCC – 0.2V,	Ind.	—	15	—	15	—	15	—	15

VIN > VCC – 0.2V, or

VIN ≤ 0.2V, f = 0

Notes:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

CAPACITANCE(1,2)

Symbol	Parameter	Conditions	Max.	Unit
CIN	Input Capacitance	VIN = 0V	6	pF
COUT	Output Capacitance	VOUT = 0V	8	pF

Notes:

1.Tested initially and after any design or process changes that may affect these parameters.

2.Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.

Integrated Circuit Solution, Inc.

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SR026-0C