1+$ +$" $
64K x 16 HIGH-SPEED CMOS STATIC RAM
FEATURES
•High-speed access time: 10, 12, 15, and 20 ns
•CMOS low power operation
—1650 mW (max) @ -10ns Cycle
—55 mW (max) CMOS Standby
•TTL compatible interface levels
•Single 5V ± 10% power supply
•Fully static operation: no clock or refresh required
•Three state outputs
•Industrial temperature available
•Available in 44-pin SOJ package and 44-pin TSOP-2
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The 1+51 IC61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumption.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IC61C6416 is packaged in the JEDEC standard 44-pin 400mil SOJ and 44-pin 400mil TSOP-2.
A0-A15 |
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DECODER |
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64K x 16 |
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MEMORY ARRAY |
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VCC |
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GND |
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I/O0-I/O7 |
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I/O |
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Lower Byte |
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COLUMN I/O |
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DATA |
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I/O8-I/O15 |
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CIRCUIT |
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Upper Byte |
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CE |
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OE |
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CONTROL |
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WE |
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CIRCUIT |
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UB |
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LB |
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ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc. |
1 |
AHSR011-0A 05/23/2001
1+$ +$" $
PIN CONFIGURATIONS
44-Pin SOJ |
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44-Pin TSOP-2 |
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A15 |
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1 |
44 |
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A0 |
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A14 |
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43 |
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A1 |
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44 |
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A0 |
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2 |
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A15 |
1 |
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A13 |
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42 |
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A2 |
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3 |
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A14 |
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2 |
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A1 |
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A12 |
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4 |
41 |
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A13 |
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3 |
42 |
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A2 |
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OE |
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A12 |
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4 |
41 |
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A11 |
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5 |
40 |
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UB |
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OE |
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A11 |
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5 |
40 |
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UB |
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CE |
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LB |
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38 |
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I/O15 |
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CE |
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39 |
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LB |
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I/O0 |
7 |
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I/O0 |
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7 |
38 |
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I/O15 |
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37 |
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I/O14 |
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I/O1 |
8 |
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I/O1 |
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8 |
37 |
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I/O14 |
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36 |
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I/O13 |
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I/O2 |
9 |
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I/O2 |
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9 |
36 |
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I/O13 |
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I/O3 |
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35 |
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I/O12 |
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I/O3 |
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10 |
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I/O12 |
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Vcc |
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34 |
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GND |
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11 |
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Vcc |
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34 |
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GND |
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11 |
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GND |
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12 |
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Vcc |
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GND |
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33 |
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Vcc |
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12 |
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I/O4 |
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32 |
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I/O11 |
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I/O4 |
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32 |
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I/O11 |
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I/O5 |
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31 |
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I/O10 |
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I/O5 |
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31 |
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I/O10 |
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30 |
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I/O9 |
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I/O6 |
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I/O9 |
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I/O6 |
15 |
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I/O7 |
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16 |
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I/O8 |
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29 |
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I/O8 |
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I/O7 |
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NC |
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28 |
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NC |
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WE |
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WE |
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27 |
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A3 |
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A10 |
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A10 |
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18 |
27 |
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A3 |
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26 |
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A4 |
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A9 |
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A9 |
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26 |
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A4 |
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A8 |
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20 |
25 |
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A5 |
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A8 |
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25 |
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A5 |
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A7 |
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24 |
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A6 |
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A7 |
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24 |
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A6 |
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NC |
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23 |
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NC |
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NC |
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23 |
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NC |
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PIN DESCRIPTIONS
A0-A15 |
Address Inputs |
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I/O0-I/O15 |
Data Inputs/Outputs |
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CE |
Chip Enable Input |
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OE |
Output Enable Input |
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WE |
Write Enable Input |
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LB |
Lower-byte Control (I/O0-I/O7) |
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UB |
Upper-byte Control (I/O8-I/O15) |
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NC |
No Connection |
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Vcc |
Power |
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GND |
Ground |
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TRUTH TABLE
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I/O PIN |
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Mode |
WE |
CE |
OE |
LB |
UB |
I/O0-I/O7 |
I/O8-I/O15 |
Vcc Current |
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Not Selected |
X |
H |
X |
X |
X |
High-Z |
High-Z |
ISB , ISB |
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Output Disabled |
H |
L |
H |
X |
X |
High-Z |
High-Z |
ICC , ICC |
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X |
L |
X |
H |
H |
High-Z |
High-Z |
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Read |
H |
L |
L |
L |
H |
DOUT |
High-Z |
ICC , ICC |
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H |
L |
L |
H |
L |
High-Z |
DOUT |
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H |
L |
L |
L |
L |
DOUT |
DOUT |
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Write |
L |
L |
X |
L |
H |
DIN |
High-Z |
ICC , ICC |
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L |
L |
X |
H |
L |
High-Z |
DIN |
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L |
L |
X |
L |
L |
DIN |
DIN |
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2 |
Integrated Circuit Solution Inc. |
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AHSR011-0A 05/23/2001 |
1+$ +$" $
ABSOLUTE MAXIMUM RATINGS(1)
Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
–0.5 to +7.0 |
V |
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TSTG |
Storage Temperature |
–65 to +150 |
°C |
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PT |
Power Dissipation |
1.5 |
W |
IOUT |
DC Output Current (LOW) |
20 |
mA |
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Note:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range |
Ambient Temperature |
Speed |
VCC |
Commercial |
0°C to +70°C |
-10, -12 |
5V ± 5% |
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-15, -20 |
5V ± 10% |
Industrial |
–40°C to +85°C |
-12 |
5V ± 5% |
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-15, -20 |
5V ± 10% |
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Unit |
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VOH |
Output HIGH Voltage |
VCC = Min., IOH = –4.0 mA |
2.4 |
— |
V |
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VOL |
Output LOW Voltage |
VCC = Min., IOL = 8.0 mA |
— |
0.4 |
V |
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VIH |
Input HIGH Voltage(1) |
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2.2 |
VCC + 0.5 |
V |
VIL |
Input LOW Voltage(2) |
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–0.5 |
0.8 |
V |
ILI |
Input Leakage |
GND ≤ |
VIN ≤ VCC |
–2 |
2 |
µA |
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ILO |
Output Leakage |
GND ≤ |
VOUT ≤ VCC, Outputs Disabled |
–2 |
2 |
µA |
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Notes:
1.VIH=VCC +3.0V for pulse width less than 10ns.
2.VIL = –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
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-10 |
-12 |
-15 |
-20 |
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Symbol |
Parameter |
Test Conditions |
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Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
Unit |
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ICC |
Vcc Dynamic Operating |
VCC = Max., |
Com. |
— |
300 |
— |
280 |
— |
260 |
— |
235 |
mA |
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Supply Current |
IOUT = 0 mA, f = MAX |
Ind. |
— |
— |
— |
300 |
— |
290 |
— |
255 |
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ISB |
TTL Standby Current |
VCC = Max., |
Com. |
— |
50 |
— |
50 |
— |
50 |
— |
50 |
mA |
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(TTL Inputs) |
VIN = VIH or VIL |
Ind. |
— |
— |
— |
55 |
— |
55 |
— |
55 |
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CE ≥ VIH , f = 0 |
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ISB |
CMOS Standby |
VCC = Max., |
Com. |
— |
10 |
— |
10 |
— |
10 |
— |
10 |
mA |
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Current (CMOS Inputs) |
CE ≥ VCC – 0.2V, |
Ind. |
— |
— |
— |
15 |
— |
15 |
— |
15 |
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VIN ≥ VCC – 0.2V, or |
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VIN ≤ 0.2V, f = 0 |
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Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Circuit Solution Inc. |
3 |
AHSR011-0A 05/23/2001