HIT PF0415A Datasheet

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HIT PF0415A Datasheet

PF0415A

MOS FET Power Amplifier Module

for PCS 1900 Handy Phone

ADE-208-473C (Z) 4th Edition August 1997

Application

For PCS 1900 class1 1850 to 1910 MHz.

Features

3stage amplifier

Small package : 0.2cc

High efficiency : 45% Typ

High speed switching : 0.9 sec

Pin Arrangement

RF-K

 

G

G

3

1: Pin

 

4

 

 

2: Vapc

 

 

 

 

3: Vdd

 

 

 

 

G 2

 

 

 

 

4: Pout

 

 

 

1

G

G: GND

Absolute Maximum Ratings (Tc = 25°C)

Item

Symbol

Rating

Unit

Supply voltage

VDD

11

V

Supply current

IDD

3

A

VAPC voltage

VAPC

6

V

Input power

Pin

20

mW

 

 

 

 

Operating case temperature

Tc (op)

–30 to +100

°C

Storage temperature

Tstg

–30 to +100

°C

Output power

 

 

 

 

 

 

 

 

 

Pout

3

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PF0415A

Electrical Characteristics (Tc = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

Test Condition

Frequency range

f

1850

1910

MHz

 

 

 

 

 

 

 

 

 

 

Control voltage range

VAPC

0.5

3

V

 

 

Drain cutoff current

IDS

100

µA

 

VDD = 11 V, VAPC = 0 V

Total efficiency

ηT

37

45

%

 

Pin = 2 mW, V DD = 4.8 V,

 

 

 

 

 

 

 

 

2nd harmonic distortion

2nd H.D.

–45

–35

dBc

 

Pout = 1.8 W (at APC controlled),

 

 

 

 

 

 

 

R L = Rg = 50 Ω, Tc = 25°C

3rd harmonic distortion

3rd H.D.

–45

–35

dBc

 

 

 

 

 

 

 

 

 

Input VSWR

VSWR (in)

1.5

3

 

 

 

 

 

 

 

 

 

 

Output power (1)

Pout (1)

2.0

2.4

W

 

Pin = 2 mW, V DD = 4.8 V, VAPC = 3 V,

 

 

 

 

 

 

 

RL = Rg = 50 Ω, Tc = 25°C

 

 

 

 

 

 

 

 

Output power (2)

Pout (2)

1.2

1.5

W

 

Pin = 2 mW, V DD = 4.3 V, VAPC = 3 V,

 

 

 

 

 

 

 

RL = Rg = 50 Ω, Tc = 80°C

 

 

 

 

 

 

 

Isolation

–40

–30

dBm

Pin = 2 mW, V DD =4.8 V, VAPC = 0.5 V,

 

 

 

 

 

 

 

RL = Rg = 50 Ω, Tc = 25°C

 

 

 

 

 

 

 

 

Switching time

tr, tf

0.9

2

µs

 

Pin = 2 mW, VDD = 4.8 V,

 

 

 

 

 

 

 

Pout = 1.8 W,

 

 

 

 

 

 

 

RL = Rg = 50 Ω, Tc = 25°C

 

 

 

 

 

Stability

No parasitic oscillation

Pin = 2 mW, V DD = 6 V,

 

 

 

 

 

 

 

Ids ≤ 0.9 A (only pulsed),

Pout ≤ 1.8 W (at APC controlled),

Rg = 50 Ω, t = 20 sec., Tc = 25°C,

Output VSWR = 10 : 1 All phases

2

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