HIT PF0414B Datasheet

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HIT PF0414B Datasheet

PF0414B

MOS FET Power Amplifier Module

for DCS 1800 Handy Phone

ADE-208-432C (Z) 4th Edition December 1997

Application

For DCS 1800 class1 1710 to 1785 MHz.

Features

3stage amplifier : 0 dBm input

Lead less thin & small package : 2 mm Max & 0.2cc

High efficiency : 40% Typ at 32.5 dBm

Wide gain control range : 70 dB Typ

Low voltage operation : 3.5 V

Pin Arrangement

RF-K

 

G

G

3

1: Pin

 

4

 

 

2: Vapc

 

 

 

 

3: Vdd

 

 

 

 

G 2

 

 

 

 

4: Pout

 

 

 

1

G

G: GND

Absolute Maximum Ratings (Tc = 25°C)

Item

Symbol

Rating

Unit

Supply voltage

VDD

8

V

Supply current

IDD

2

A

VAPC voltage

VAPC

4

V

Input power

Pin

10

mW

 

 

 

 

Operating case temperature

Tc (op)

–30 to +100

°C

Storage temperature

Tstg

–30 to +100

°C

Output power

 

 

 

 

 

 

 

 

 

Pout

3

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PF0414B

Electrical Characteristics (Tc = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

Test Condition

Frequency range

f

1710

1785

MHz

 

 

 

 

 

 

 

 

 

 

Control voltage range

VAPC

0.5

2.2

V

 

 

Drain cutoff current

IDS

100

µA

 

VDD = 8 V, VAPC = 0 V

Total efficiency

ηT

35

40

%

 

Pin = 0 dBm, V DD = 3.5 V,

 

 

 

 

 

 

 

 

2nd harmonic distortion

2nd H.D.

–45

–35

dBc

 

Pout = 32.5 dBm (at APC controlled),

 

 

 

 

 

 

 

R L = Rg = 50 Ω, Tc = 25°C

3rd harmonic distortion

3rd H.D.

–45

–35

dBc

 

 

 

 

 

 

 

 

 

Input VSWR

VSWR (in)

1.5

3

 

 

 

 

 

 

 

 

 

 

Output power (1)

Pout (1)

32.5

33.0

dBm

 

Pin = 0 dBm, V DD = 3.5 V,

 

 

 

 

 

 

 

VAPC = 2.2 V, RL = Rg = 50 Ω,

 

 

 

 

 

 

 

Tc = 25°C

 

 

 

 

 

 

 

 

Output power (2)

Pout (2)

31

31.5

dBm

 

Pin = 0 dBm, V DD = 3.0 V,

 

 

 

 

 

 

 

VAPC = 2.2 V, RL = Rg = 50 Ω,

 

 

 

 

 

 

 

Tc = 85°C

 

 

 

 

 

 

 

Isolation

–36

–33

dBm

Pin = 0 dBm, V DD = 3.5 V,

 

 

 

 

 

 

 

VAPC = 0.5 V, RL = Rg = 50 Ω,

 

 

 

 

 

 

 

Tc = 25°C

 

 

 

 

 

 

 

 

Switching time

tr, tf

1

2

µs

 

Pin = 0 dBm, VDD = 3.5 V,

 

 

 

 

 

 

 

Pout = 32.5 dBm, RL = Rg = 50 Ω,

 

 

 

 

 

 

 

Tc = 25°C

 

 

 

 

 

 

 

Stability

No parasitic

 

 

Pin = 0 dBm, V DD = 3 to 5.1 V,

 

 

oscillation

 

 

 

Pout ≤ 32.5 dBm (at APC controlled),

Rg = 50 Ω, t = 20 sec., Tc = 25°C,

Output VSWR = 6 : 1 All phases

2

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