HIT PF01411B Datasheet

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HIT PF01411B Datasheet

PF01411B

MOS FET Power Amplifier Module

for E-GSM Handy Phone

ADE-208-434B (Z) 3rd Edition Nov. 1997

Application

For E-GSM class4 880 to 915 MHz

For 3.5 V nominal battery use

Features

High gain 3stage amplifier : 0 dBm input

Lead less thin & Small package : 2 mm Max, 0.2cc

High efficiency : 45% Typ at 35.5 dBm

Wide gain control range : 70 dB Typ

Pin Arrangement

 

G G

3

1: Pin

4

 

2: Vapc

 

 

3: Vdd

 

 

G 2

 

 

4: Pout

 

1 G

G: GND

Absolute Maximum Ratings (Tc = 25°C)

Item

Symbol

Rating

Unit

Supply voltage

VDD

8

V

Supply current

IDD

3

A

VAPC voltage

VAPC

4

V

Input power

Pin

10

mW

 

 

 

 

Operating case temperature

Tc (op)

–30 to +100

°C

Storage temperature

Tstg

–30 to +100

°C

Output power

 

 

 

 

 

 

 

 

 

Pout

5

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PF01411B

Electrical Characteristics (Tc = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

Test Condition

Frequency range

f

880

915

MHz

 

 

 

 

 

 

 

 

 

 

Control voltage range

VAPC

0.5

2.2

V

 

 

Drain cutoff current

IDS

100

µA

 

VDD = 8V, VAPC = 0V

Total efficiency

ηT

40

45

%

 

Pin = 0dBm, V DD = 3.5V,

 

 

 

 

 

 

 

 

2nd harmonic distortion

2nd H.D.

–45

–35

dBc

 

Pout = 35.5dBm, Vapc = control

 

 

 

 

 

 

 

 

3rd harmonic distortion

3rd H.D.

–45

–35

dBc

 

RL = Rg = 50Ω, Tc = 25°C

 

 

 

 

 

 

 

 

Input VSWR

VSWR (in)

1.5

3

 

 

 

 

 

 

 

 

 

 

Output power (1)

Pout (1)

35.5

36.0

dBm

 

Pin = 0dBm, V DD = 3.5V,

 

 

 

 

 

 

 

VAPC = 2.2V, RL = Rg = 50Ω,

 

 

 

 

 

 

 

Tc = 25°C

 

 

 

 

 

 

 

 

Output power (2)

Pout (2)

33.5

34.2

dBm

 

Pin = 0dBm, V DD = 3.0V,

 

 

 

 

 

 

 

VAPC = 2.2V, RL = Rg = 50Ω,

 

 

 

 

 

 

 

Tc = 85°C

 

 

 

 

 

 

 

Isolation

–40

–36

dBm

Pin = 0dBm, V DD = 3.5V,

 

 

 

 

 

 

 

VAPC = 0.5V, RL = Rg = 50Ω,

 

 

 

 

 

 

 

Tc = 25°C

 

 

 

 

 

 

 

 

Switching time

tr, tf

1

2

µs

 

Pin = 0dBm, VDD = 3.5V,

 

 

 

 

 

 

 

Pout = 0 to 35.5dBm

 

 

 

 

 

 

 

RL = Rg = 50Ω, Tc = 25°C

 

 

 

 

 

Stability

No parasitic oscillation

Pin = 0dBm, V DD = 3 to 5.1V,

 

 

 

 

 

 

 

Pout ≤ 35.5dBm,

 

 

 

 

 

 

 

Vapc ≤ 2.2V GSM pulse.

 

 

 

 

 

 

 

Rg = 50Ω, Tc = 25°C,

 

 

 

 

 

 

 

Output VSWR = 6 : 1 All phases

 

 

 

 

 

 

Load VSWR tolerance

No degradation

 

Pin = 0dBm, V DD = 3 to 5.1V,

Pout ≤ 35.5dBm,

Vapc ≤ 2.2V GSM pulse.

Rg = 50Ω, t = 20sec., Tc = 25°C,

Output VSWR = 10 : 1 All phases

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