HIT PF01410A Datasheet

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HIT PF01410A Datasheet

PF01410A

MOS FET Power Amplifier Module

for GSM Handy Phone

ADE-208-424B (Z)

Product Preview

3rd. Edition

November 1997

Application

For GSM class4 890 to 915 MHz

Features

4.8 V operation 2 stage amplifier

Small package

High efficiency : 45% Typ

High speed switching : 1 sec

Pin Arrangement

 

G G

3

1: Pin

4

 

2: Vapc

 

 

3: Vdd

 

 

G 2

 

 

4: Pout

 

1 G

G: GND

Absolute Maximum Ratings (Tc = 25°C)

Item

Symbol

Rating

Unit

Supply voltage

VDD

10

V

Supply current

IDD

3

A

VAPC voltage

VAPC

4

V

Input power

Pin

50

mW

 

 

 

 

Operating case temperature

Tc (op)

–30 to +100

°C

Storage temperature

Tstg

–30 to +100

°C

Output power

 

 

 

 

 

 

 

 

 

Pout

4

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PF01410A

Electrical Characteristics (Tc = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Frequency range

f

890

915

MHz

 

 

 

 

 

 

 

Control voltage range

VAPC

0.1

2.5

V

Drain cutoff current

IDS

100

µA

VDD = 10 V, VAPC = 0 V

Total efficiency

ηT

38

45

%

Pin = +8 dBm, V DD = 4.8 V,

 

 

 

 

 

 

 

2nd harmonic distortion

2nd H.D.

–45

–35

dBc

Pout = 2.8 W (At APC controlled)

 

 

 

 

 

 

 

3rd harmonic distortion

3rd H.D.

–45

–35

dBc

RL = Rg = 50Ω, Tc = 25°C

 

 

 

 

 

 

 

Input VSWR

VSWR (in)

1.5

3.0

 

 

 

 

 

 

 

 

Output power (1)

Pout (1)

2.8

3.3

W

Pin = +8 dBm, V DD = 4.8 V,

 

 

 

 

 

 

VAPC = 2.5 V, RL = Rg = 50Ω,

 

 

 

 

 

 

Tc = 25°C

 

 

 

 

 

 

 

Output power (2)

Pout (2)

1.5

1.8

W

Pin = +8 dBm, V DD = 4 V,

 

 

 

 

 

 

VAPC = 2.5 V, RL = Rg = 50Ω,

 

 

 

 

 

 

Tc = 85°C

 

 

 

 

 

 

 

Isolation

–35

–20

dBm

Pin = +12.5 dBm, V DD = 4.8 V,

 

 

 

 

 

 

VAPC = 0.1 V, RL = Rg = 50Ω,

 

 

 

 

 

 

Tc = 25°C

 

 

 

 

 

 

 

Switching time

tr, tf

1

2

µs

Pin = +8 dBm, VDD = 4.8 V,

 

 

 

 

 

 

RL = Rg = 50Ω, Tc = 25°C

 

 

 

 

 

 

Time from Pout = –10 to +34.5 dBm

 

 

 

 

 

 

Stability

No parasitic

 

Pin = +8 dBm, V DD = 7 V,

 

 

oscillation

 

 

Pout ≤ 2.8 W (At APC controlled),

Rg = 50 Ω, Tc = 25°C,

Output VSWR = 8 : 1 All phases

2

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