HIT PF0121 Datasheet

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PF0121

MOS FET Power Amplifier Module for GSM Mobile Phone

ADE-208-097A (Z) 2nd Edition July 1996

Application

For GSM CLASS2 890 to 915 MHz

Features

Low power control current: 0.9 mA Typ

High speed switching: 1.5 sec Typ

Wide power control range: 100 dB Typ

Pin Arrangement

RF-B2

 

5

 

 

 

 

1: Pin

 

 

4

2: VAPC

 

3

3: VDD

 

 

 

 

 

4: Pout

5

2

 

5: GND

1

 

 

HIT PF0121 Datasheet

PF0121

Internal Diagram and External Circuit

G

 

 

 

 

 

G

GND

 

 

 

 

 

GND

 

Pin1

Pin2

 

Pin3

 

Pin4

 

Pin

VAPC

 

VDD

 

Pout

 

Z1

FB1

C2

FB2

C1

Z2

 

Pin

VAPC

 

VDD

 

Pout

C1 = 0.01 μF (Ceramic chip capacitor)

 

 

 

 

C2 = 330

μF (Aluminum Electrolyte Capacitor)

 

 

 

 

FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent

 

Z1 = Z2 = 50 Ω (Microstrip line)

 

 

 

 

Absolute Maximum Ratings (Tc = 25°C)

Item

Symbol

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Unit

Supply voltage

VDD

17

V

Supply current

IDD

6

A

APC voltage

VAPC

8

V

Input power

Pin

20

mW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Operating case temperature

Tc (op)

 

 

 

 

 

 

 

 

 

 

 

 

–30 to +110

°C

Storage temperature

Tstg

 

 

 

 

 

 

 

 

 

 

 

 

–40 to +110

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

PF0121

 

Electrical Characteristics (Tc = 25°C)

 

 

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Unit

 

Test Condition

 

 

 

 

 

 

 

 

 

 

 

 

Drain cutoff current

IDS

500

µA

 

VDD = 17 V, VAPC = 0 V

 

 

Total efficiency

ηT

30

35

%

Pin =

2 mW, VDD = 12.5

V,

 

 

 

 

 

 

 

 

 

 

2nd harmonic distortion

2nd H.D.

–50

–40

dBc

Pout = 13 W (at APC controlled),

 

 

 

 

 

 

 

 

 

 

3rd harmonic distortion

3rd H.D.

–55

–45

dBc

R L = Rg = 50 Ω, Tc = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

Input VSWR

VSWR (in)

2

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output power (1)

Pout (1)

17

23

W

Pin =

2 mW, VDD = 12.5

V, VAPC = 7 V,

 

 

 

 

 

 

 

 

RL =Rg = 50 Ω, Tc = 25°C

 

 

 

 

 

 

 

 

 

 

Output power (2)

Pout (2)

9

12

W

Pin =

2 mW, VDD = 10.3V, VAPC = 7 V,

 

 

 

 

 

 

 

 

RL = Rg = 50 Ω, Tc = 80°C

 

 

 

 

 

 

 

 

 

 

 

Isolation

–60

–40

dBm

Pin =

2 mW, VDD = 12.5

V, VAPC = 0.5 V,

 

 

 

 

 

 

 

 

RL = Rg = 50 Ω, Tc = 25°C

 

 

 

 

 

 

 

 

 

 

 

Switching time

tr, tf

1.5

2

µs

 

Pin = 2 mW, VDD = 12.5

V, Pout = 13 W,

 

 

 

 

 

 

 

 

RL = Rg = 50 Ω, Tc = 25°C

 

 

 

 

 

 

 

 

Stability

No parasitic oscillation —

Pin =

2 mW, VDD = 12.5

V,

Pout ≤ 13 W (at APC controlled),

Rg = 50 Ω, Tc = 25°C,

Output VSWR = 20:1 All phases

Test System Diagram

S.G

 

VAPC

VDD

 

 

 

Power

 

 

Spectrum

 

 

Meter

 

 

Analyzer

 

L.P.F

3dB

 

 

 

 

ATT

 

 

 

 

 

Test

 

 

 

 

RF SW.

Power Meter

 

 

Fixture

 

 

 

 

 

Directional

 

 

Directional

 

 

Coupler

 

 

Coupler

 

 

 

 

 

Phase

Short

 

 

 

 

Shifter

 

 

 

 

 

3

PF0121

Switching Time Test Diagram

 

VDD=12.5 V

 

 

 

S.G

 

Z=50Ω

 

Duty=1/8

 

 

Power

 

D.U.T

 

 

 

 

 

 

Meter

 

Pin

 

Pout

2p

 

 

 

 

P.G

 

VAPC

2p

50%

50%

f=10 kHz

1SS106

 

 

1SS106

VAPC

 

 

 

 

2.2 kΩ

 

 

 

100p

95%

 

Oscillo

Vout

 

 

 

 

Scope

 

 

 

5%

 

 

 

 

Vout

 

 

 

 

tf

 

 

 

 

tr

4

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